FDG6332C_F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 20V N & P-Channel PowerTrench MOSFETs General Description Features • Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 mΩ @ VGS = –2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. • Low gate charge • High performance trench technology for extremely Applications low RDS(ON) • DC/DC converter • SC70-6 package: small footprint (51% smaller than • Load switch SSOT-6); low profile (1mm thick) • LCD display inverter • Qualified to AEC Q101 • RoHS Compliant S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Absolute Maximum Ratings Symbol Complementary o TA=25 C unless otherwise noted Q1 Q2 VDSS Drain-Source Voltage Parameter 20 –20 V VGSS Gate-Source Voltage ±12 ±12 V ID Drain Current 0.7 –0.6 A PD Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range – Continuous (Note 1) – Pulsed 2.1 (Note 1) Units –2 0.3 W –55 to +150 °C 415 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .32 FDG6332C-F085 7’’ 8mm 3000 units 2009 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: FDG6332C-F085/D FDG6332C-F085 20V N & P-Channel PowerTrench MOSFETs FDG6332C-F085 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF /IGSSR Gate–Body Leakage, Forward IGSSF /IGSSR Gate–Body Leakage, Reverse On Characteristics VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA,Ref. to 25°C ID = –250 µA,Ref. to 25°C VDS = 16 V, VGS = 0 V VDS = –16 V, VGS = 0 V VGS = ± 12 V, VDS = 0 V VGS = ± 12V , VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 20 –20 V 14 –14 mV/°C 1 –1 ±100 ±100 µA V (Note 2) Gate Threshold Voltage Q1 VDS = VGS, ID = 250 µA 0.6 1.1 1.5 VDS = VGS, ID = –250 µA -0.6 –1.5 ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient Q2 Q1 Q2 RDS(on) Static Drain–Source On–Resistance VGS(th) gFS ID(on) nA nA Q2 VGS = –4.5 V, ID = –0.6 A VGS = –2.5 V, ID = –0.5 A VGS=–4.5 V, ID =–0.6 A,TJ=125°C –1.2 –2.8 3 180 293 247 300 470 400 Q1 VDS = 5 V ID = 0.7 A 2.8 Q2 VDS = –5 V ID = –0.6A 1.8 Q1 VGS = 4.5 V, VDS = 5 V Q2 VGS = –4.5 V, VDS = –5 V Q1 Forward Transconductance On–State Drain Current ID = 250 µA,Ref. To 25°C ID = –250 µA,Ref. to 25°C VGS = 4.5 V, ID =0.7 A VGS = 2.5 V, ID =0.6 A VGS = 4.5 V, ID =0.7A,TJ=125°C mV/°C 300 400 442 mΩ 420 630 700 S 1 A –2 Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance VDS=10 V, V GS= 0 V, f=1.0MHz 113 Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 114 Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 34 Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 24 VDS=10 V, V GS= 0 V, f=1.0MHz 16 Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 9 Q1 For Q1: VDS =10 V, VGS= 4.5 V, Reverse Transfer Capacitance Q1 Switching Characteristics td(on) Q1 Turn–On Delay Time td(off) Turn–On Rise Time Q1 Turn–Off Delay Time Q2 Q1 Q2 tf Qg Qgs Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge pF I D= 1 A RGEN = 6 Ω For Q2: VDS =–10 V, I D= –1 A VGS= –4.5 V, RGEN = 6 Ω 5 10 5.5 11 7 14 15 25 ns 9 18 ns 6 12 ns Q1 1.5 3 ns Q2 1.7 1.1 3.4 1.5 nC 1.4 2 Q1 Q2 Q1 Q2 Qgd pF (Note 2) Q2 tr pF Q1 For Q1: VDS =10 V, VGS= 4.5 V, For Q2: VDS =–10 V, VGS= –4.5 V, I D= 0.7 A RGEN = 6 Ω I D= –0.6 A RGEN = 6 Ω Q2 www.onsemi.com 2 0.24 nC 0.3 0.3 0.4 nC FDG6332C-F085 20V N & P-Channel PowerTrench MOSFETs Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Q1 0.25 Q2 –0.25 Q1 VGS = 0 V, IS = 0.25 A (Note 2) 0.74 1.2 Q2 VGS = 0 V, IS = –0.25 A (Note 2) –0.77 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad of FR-4 PCB in a still air environment. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 3 FDG6332C-F085 20V N & P-Channel PowerTrench MOSFETs Electrical Characteristics 1.8 4 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS=4.5V 3.5V 2.5V 3 2 2.0V 1 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 0.8 0 0 1 2 3 0 4 1 Figure 1. On-Region Characteristics. 3 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 1.6 ID =0.7A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 I D, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 ID =0.4A 0.6 TA = 125oC 0.4 TA = 25oC 0.2 0 0.6 -50 -25 0 25 50 75 100 125 2 1 150 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 2.5 2 VGS = 0V 25oC IS, REVERSE DRAIN CURRENT (A) o TA = -55 C VDS = 5V I D, DRAIN CURRENT (A) 4.5V 1 125oC 1.5 1 0.5 1 TA = 125oC 25 oC 0.1 o -55 C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 4 FDG6332C-F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: N-Channel 200 VDS = 5V ID = 0.7A f = 1MHz VGS = 0 V 10V 4 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 150 CISS 100 COSS 50 1 CRSS 0 0 0 0.8 0.4 1.2 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 5 0 1.6 Qg , GATE CHARGE (nC) 100µs 1ms 1 10ms 100ms 1s VGS = 4.5V SINGLE PULSE RθJA = 415oC/W 0.1 DC o TA = 25 C 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 415°C/W TA = 25°C 8 6 4 2 0 0.001 0.01 0.1 1 10 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. www.onsemi.com 5 100 FDG6332C-F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: N-Channel 2 1.8 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -ID, DRAIN CURRENT (A) -3.5V 1.6 -2.5V 1.2 0.8 -2.0V 0.4 VGS = -2.5V 1.6 1.4 -3.0V 1.2 -3.5V -4.0V -4.5V 1 0.8 0 1 0 2 3 0 4 0.5 Figure 11. On-Region Characteristics. 2 1.2 ID = -0.6A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1.1 1 0.9 0.8 ID = -0.3 A 1 0.8 TA = 125oC 0.6 TA = 25o C 0.4 0.2 0.7 -50 -25 0 25 50 75 100 125 1 150 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 2 TA = -55 oC VGS = 0V 25oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V o -ID, DRAIN CURRENT (A) 1 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 125 C 1.5 1 0.5 1 o TA = 125 C 0.1 o 25 C 0.01 -55oC 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 0 Figure 15. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 6 FDG6332C-F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: P-Channel 160 ID = -0.6A VDS = -5V f = 1MHz VGS = 0 V -10V 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 120 CISS 80 COSS 40 1 CRSS 0 0 0 0.3 0.6 0.9 1.2 1.5 5 0 1.8 Figure 17. Gate Charge Characteristics. 15 20 Figure 18. Capacitance Characteristics. 10 10 100µs RDS(ON) LIMIT 10ms 100ms 1s VGS = -4.5V SINGLE PULSE o RθJA = 415 C/W DC 6 4 2 o TA = 25 C 0.01 0.1 o TA = 25 C 1ms 1 0.1 SINGLE PULSE o RθJA = 415 C/W 8 POWER (W) -ID, DRAIN CURRENT (A) 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 100 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 415 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. www.onsemi.com 7 10 100 FDG6332C-F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: P-Channel ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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