FDG8842CZ

Complementary PowerTrench® MOSFET Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features General Description Q1: N-Channel These N & P-Channel logic level enhancement mode field „ Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A effect transistors are produced using ON Semiconductor’s „ Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A proprietary, high cell density, DMOS technology. This very high density process is especially Q2: P-Channel on-state resistance. tailored to minimize This device has been designed „ Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A especially for low voltage applica-tions as a replacement for „ Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A bipolar digital transistors and small signal MOSFETs. Since „ Very low level gate drive requirements operation in 3V circuits(VGS(th)