FDG901D

FDG901D Slew Rate Control IC for P-Channel MOSFETs Features General Description Three Programmable Slew Rates The FDG901D is specifically designed to control the turn on of a P-Channel MOSFET in order to limit the inrush current in battery switching applications with high capacitance loads. During turn-on, the FDG901D drives the MOSFET's gate low with a regulated current source, thereby controlling the MOSFET's turn on. For turn-off, the IC pulls the MOSFET gate up quickly for efficient turn off. Reduces Inrush Current Minimizes EMI Normal Turn-Off Speed Low-Power CMOS Operates Over Wide Voltage Range Compact Industry Standard SC70-5 Surface Mount Package RoHS Compliant Applications Battery Load switch Power management Pin 1 SC70-5 Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 91 FDG901D 7” 8mm 3000 units ©2007 Fairchild Semiconductor Corporation FDG901D Rev. E 1 www.fairchildsemi.com FDG901D Slew Rate Control IC for P-Channel MOSFETs February 2008 FDG901D Slew Rate Control IC for P-Channel MOSFETs Pin Configuration G ATE 1 SLEW 2 VDD 3 5 GND 4 LOG IC IN Absolute Maximum Ratings Parameter Min. Max. Supply Voltage -0.5 10 V DC Input Voltage (Logic Inputs) -0.7 9 V 150 mW -65 150 °C 425 °C/W Max. Unit Power Dissipation for Single Operation @ 85°C Operating and Storage Junction Temperature Thermal Resistance, Junction to Ambient (note 1) Unit Recommended Operating Range Parameter Min. Supply Voltage 2.7 6 V Operating Junction Temperature -40 150 °C Electrical Characteristics TA = 25°C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Units 2.0 V Logic Levels Logic High Input Voltage VIH VDD = 2.7V to 6.0V Logic Low Input Voltage VIL VDD = 2.7V to 6.0V 2.55 V Off Characteristics - Slew Rate Control Driver Supply Input Breakdown Voltage BVDG IDG = 10 A, VIN = 0V, VSLEW = 0V 9 V Slew Input Breakdown Voltage BVSLEW ISLEW = 10 A, VIN = 0V 9 V Logic Input Breakdown Voltage BVIN IIN = 10 A, VSLEW = 0V 9 V Supply Input Leakage Current IRDG VDG = 8V, VIN = 0V, VSLEW = 0V 100 nA Slew Input Leakage Current IRSLEW VSLEW = 8V, VIN = 0V 100 nA Logic Input Leakage Current IRIN VIN = 8V, VSLEW = 0V 100 nA On Characteristics - Slew Rate Control Driver Gate Current IG VIN = 6V, VGATE = 2V Slew Pin = Open 90 120 A Slew Pin = GND 1 10 A Slew Pin = VDD 10 50 nA Notes: Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design. FDG901D Rev. E 2 www.fairchildsemi.com TA = 25°C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Units P-Channel Switching Times (VSUPPLY = 5.5V, VDD = 5.5V, Logic IN = 5.5V, CLOAD = 510pF, Test Circuit) Delay On Time tdON VOUT Rise Time tR = Open 8.3 s Slew Pin = GND 0.6 ms = VDD 2.2 ms = Open 28 s Slew Pin = GND 1.8 ms 11 ms = VDD Output Slew Rate dv/dt = Open 162 V/ms Slew Pin = GND 26 V/ms 0.3 V/ms = VDD VDD SLEW 2 VSUPPLY 3 L O G IC IN CLoad 10% 90% 1 LOGIC IN 4 O U TPUT ( In v e r te d ) 5 10% td O N tR Test Circuit FDG901D Rev. E Switching Waveform 3 www.fairchildsemi.com FDG901D Slew Rate Control IC for P-Channel MOSFETs Electrical Characteristics Cont. 2.0 100 Slew = Gnd Vdd=Vin=6V Slew = Open Vdd=Vin=6V 95 1.5 Gate Current (µA) Gate Current, (µA) 90 85 80 75 70 1.0 0.5 65 60 -50 0 50 100 0.0 150 -50 0 50 Temperature, (oC) Figure 1. Gate Output Current vs. Temperature (SLEW = OPEN) Figure 2. Gate Output Current vs. Temperature (SLEW = GROUND) Output Risetime, microseconds (µsec) Slew = Vdd Vdd=Vin=6V 12 Gate Current, (nA) 150 100 14 10 8 6 4 -50 0 50 100 Slew = Open Vdd=Vin=5.5V 10 1 0.1 150 1 10 o Temperature, ( C) 10000 100 1000 Load Capacitance, picoFarad (pF) Figure 3. Gate Output Current vs. Temperature (SLEW = VDD) Figure 4. tRISE vs. Load Capacitance (SLEW = OPEN) 100 Slew = Gnd Vdd=Vin=5.5V Output Risetime, milliseconds (ms) Output Risetime, microseconds (µs) 100 Temperature, (oC) 1000 100 10 1 Slew = Vdd Vdd=Vin=5.5V 10 1 0.1 1 10 100 1000 1 Load Capacitance, picoFarad (pF) Figure 5. tRISE vs. Load Capacitance (SLEW = GROUND) FDG901D Rev. E 10 100 1000 Load Capacitance, picoFarad (pF) Figure 6. tRISE vs. Load Capacitance (SLEW = VDD) 4 www.fairchildsemi.com FDG901D Slew Rate Control IC for P-Channel MOSFETs Typical Characteristics 160 7.5 Slew = Open Vdd=Vin=5.5V 7.0 120 6.5 time, µsecs time, microseconds (µs) Slew = Gnd Vdd=Vin=5.5V 140 trise 6.0 tdon 5.5 trise 100 80 tdon 60 40 20 5.0 0 10 20 30 40 0 50 0 Load Resistance, ohms (Ω) 10 20 30 40 50 Load Resistance, ohms (Ω) Figure 7. Switching Time vs. Load Resistance (SLEW = OPEN) Figure 8. Switching Time vs. Load Resistance (SLEW = GROUND) 200 7.5 Slew = Vdd Vdd=Vin=5.5V Slew = Open Vdd=Vin=5.5V 7.0 150 time, ( µsec) time, microseconds (µs) 175 tris 125 trise 6.5 tdon 6.0 tdon 100 5.5 75 5.0 0 10 20 30 40 50 0.0 0.5 1.0 2.0 2.5 Figure 10. Switching Time vs. Load Current (SLEW = OPEN) Figure 9. Switching Time vs. Load Resistance (SLEW = VDD) 160 200 Slew = Gnd Vdd=Vin=5.5V 140 1.5 Load Current, Amps (A) Load Resistance, ohms (Ω) Slew = Vdd Vdd=Vin=5.5V time, µsec time, microseconds (µs) 175 120 trise 100 80 60 tdon trise 150 125 tdon 100 40 20 75 0.0 0.5 1.0 1.5 2.0 2.5 0.0 Load Current, Amps (A) 1.0 1.5 2.0 2.5 Load Current, Amps (A) Figure 11. Switching Time vs. Load Current (SLEW = GROUND) FDG901D Rev. E 0.5 Figure 12. Switching Time vs. Load Current (SLEW = VDD) 5 www.fairchildsemi.com FDG901D Slew Rate Control IC for P-Channel MOSFETs Typical Characteristics FDG901D Slew Rate Control IC for P-Channel MOSFETs Application Information Typical Application I Source Drain Gate VDD Logic Signal Slew Rate Control 3 4 Load 1 2 Ig 5 Application Circuit Battery powered systems make extensive usage of load switching, turning the power to subsystems off, in order to extend battery life. Power MOSFETs are used to accomplish this task. In PDA's and Cell phones, these MOSFETs are usually low threshold P-Channels. Since the loads typically include bypass capacitor components (high capacitive component), a high inrush current can occur when the load is switched on. This inrush current can cause transients on the main power supply disturbing circuitry supplied by it. t= IG where Qg is the Gate charge in nC for a given MOSFET and IG is the gate current controlled by the slew rate pin. The simplest method of limiting the inrush current is to control the slew rate of the MOSFET switch. This can be done with external R/C circuits, but this approach can occupy significant PCB area, and involves other compromises in performance. The slew rate control driver IC FDG901D is specifically designed to interface low voltage digital circuitry with power MOSFETs and reduce the rapid inrush current in load switch applications. The IC limits inrush current by controlling the current, which drives the gate of the P-Channel MOSFET switch. Below is a captured image from an oscilloscope depicting the device response. The FDG901D was connected to control an FDG258P P-Channel DMOS. The Slew Rate control pin was set to open (floating state). The control input is a CMOS compatible input with a minimum high input voltage of 2.55V with a power rail voltage of 6V. Therefore, it is compatible with any CMOS logic voltages between 2.55V and 5V and under these conditions there is no additional configuration required. V IN V The Slew Rate Control Driver (FDG901D) is designed to give a programmed choice of one of three steady dv/dt states on the output during turn-on. To change the dv/dt value, the user needs to use the Slew Rate Control Pin (Pin 2). To utilize the smallest current setting ( 10 nA) from the IC, a voltage equal to VDD must be applied to the Slew Rate Control Pin 2. To use the next higher current setting ( ~1 A) a voltage equal to Ground must be applied to Pin 2. To achieve the highest current setting ( ~80 A) or obtain a faster switching speed, the Slew Rate Pin2 must be open (floating). A higher value of capacitance will result in a slower switching rate. To determine the switching times of each setting use the simple equation: FDG901D Rev. E Qg gate (inverted) V RLoad V DD = 5.5V V IN = 5.5V R LOAD = 1.5 Circuit w aveform s for an FDG901D controlling a P-Channel FDG 258P MO FET 6 www.fairchildsemi.com FDG901D Slew Rate Control IC for P-Channel MOSFETs Dimensional Outline and Pad Layout FDG901D Rev. E 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com