FDH44N50

MOSFET – Power, N-Channel, SMPS 500 V, 44 A, 120 mW FDH44N50 Description UniFET t MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. www.onsemi.com VDS RDS(ON) MAX ID MAX 500 V 120 mW @ 10 V 44 A Features D • Low Gate Charge Qg Results in Simple Drive Requirement (Typ. 90 nC) • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced RDS(on) (110 mW (Typ.) @ VGS = 10 V, ID = 22 A) • Reduced Miller Capacitance and Low Input Capacitance • • • G S (Typ. Crss = 40 pF) Improved Switching Speed with Low EMI 175°C Rated Junction Temperature This Device is Pb−Free and is RoHS Compliant G Applications • Lighting • Uninterruptible Power Supply • AC−DC Power Supply D S TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FDH44N50 $Y &Z &3 &K FDH44N50 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2002 January, 2020 − Rev. 3 1 Publication Order Number: FDH44N50/D FDH44N50 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol FDH44N50 Unit VDSS Drain to Source Voltage Parameter 500 V VGS Gate−Source Voltage ±30 V 44 32 176 A ID Drain Current − PD Power Dissipation 750 W Derate Above 25°C 5 W/°C −55 to + 175 °C 300 (1.6 mm from Case) °C TJ, TSTG − Continuous (TC = 25°C, VGS = 10 V) − Continuous (TC = 100°C, VGS = 10 V) − Pulsed (Note 1) Operating and Storage Temperature Soldering Temperature for 10 Seconds Mounting Torque, 8−32 or M3 Screw 10 ibf*in (1.1 N*m) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FDH44N50 FDH44N50 TO−247−3 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FDH44N50 Unit °C/W RqJC Thermal Resistance, Junction to Case, Max. 0.2 RqJA Thermal Resistance, Junction to Ambient, Max. 40 www.onsemi.com 2 FDH44N50 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit 500 − − V STATICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C − 0.61 − V/°C rDS(ON) Drain to Source On−Resistance VGS = 10 V, ID = 22 A − 0.11 0.12 W VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 2 3.15 4 V Zero Gate Voltage Drain Current VDS = 500 V VGS = 0 V TC = 25°C − − 25 mA TC = 150°C − − 250 mA BVDSS IDSS IGSS Gate to Source Leakage Current VGS = ±20 V − − ±100 nA Forward Transconductance VDS = 50 V, ID = 22 A 11 − − S Total Gate Charge at 10V VGS = 10 V, VDS = 400 V, ID = 44 A − 90 108 nC DYNAMICS gfS Qg(TOT) Qgs Gate to Source Gate Charge − 24 29 nC Qgd Gate to Drain “Miller” Charge − 31 37 nC td(on) Turn-On Delay Time − 16 − ns tr Turn−On Rise Time − 84 − ns td(off) Turn-Off Delay Time − 45 − ns tf Turn−Off Fall Time − 79 − ns Ciss Input Capacitance − 5335 − pF Coss Output Capacitance − 645 − pF Crss Reverse Transfer Capacitance − 40 − pF 1500 − − mJ − − 44 A − − 44 A − − 176 A VDD = 250 V, ID = 44 A, RD = 5.68 W, RG = 2.15 W VDS = 25 V, VGS = 0 V, f = 1 MHz AVALANCHE CHARACTERISTICS EAS Single Pulse Avalanche Energy (Note 2) IAR Avalanche Current DRAIN-SOURCE DIODE CHARACTERISTICS IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) (Note 1) MOSFET symbol Showing the integral reverse p−n junction diode. VSD Source to Drain Diode Voltage ISD = 44 A − 0.900 1.2 V trr Reverse Recovery Time ISD = 44 A, dISD/dt = 100 A/ms − 920 1100 ns Qrr Reverse Recovery Charge ISD = 44 A, dISD/dt = 100 A/ms − 14 18 mC D G S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Starting TJ = 25°C, L = 1.61 mH, IAS = 44 A www.onsemi.com 3 FDH44N50 500 TJ = 25°C VGS DESCENDING 6V 100 5.5 V 4.5 V 5V 8V 10 V ID, DRAIN TO SOURCE CURRENT (A) ID, DRAIN TO SOURCE CURRENT (A) TYPICAL CHARACTERISTICS 10 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 TJ = 175°C VGS DESCENDING 5.5 V 5V 4V 4.5 V 6V 6.5 V 10 V 100 10 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 1 1 100 1 Figure 2. Output Characteristics Figure 1. Output Characteristics 3 160 ID, DRAIN CURRENT (A) 120 NORMALIZED DRAIN to SOURCE ON RESISTANCE PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VDD = 80 V 140 100 80 TJ = 175°C 60 TJ = 25°C 40 20 0 3.0 5.5 6.0 4.0 4.5 5.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 2 1 VGS = 10 V, ID = 22 A 0 −50 6.5 0 25 50 75 100 125 150 175 Figure 4. Normalized Drain to Source On Resistance vs. Junction Temperature 16 VGS, GATE to SOURCE VOLTAGE (V) 10000 CISS C, CAPACITANCE (pF) −25 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics 1000 COSS 100 VGS = 0 V, f = 1 MHz 10 100 0 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 CRSS 10 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 44 A 250V 12 400V 8 4 0 100 100V 0 25 75 100 50 Qg, GATE CHARGE (nC) 125 150 Figure 6. Gate Charge Waveforms for Constant Gate Current Figure 5. Capacitance vs. Drain to Source Voltage www.onsemi.com 4 FDH44N50 80 200 70 100 ID, DRAIN CURRENT (A) ISD, SOURCE TO DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 60 50 40 TJ = 175°C 30 TJ = 25°C 20 100 ms 1 ms 10 OPERATION IN THIS AREA LIMITED BY RDS(ON) 10 10 ms DC TC = 25°C 0 0.3 0.4 0.5 0.6 0.7 0.8 1 1.1 1.0 0.9 1 VSD, SOURCE TO DRAIN VOLTAGE (V) 10 1000 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Maximum Safe Operating Area Figure 7. Body Diode Forward Voltage vs. Body Diode Current ID, DRAIN CURRENT (A) 50 40 30 20 10 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) ZqJC, NORMALIZED THERMAL RESPONSE Figure 9. Maximum Drain Current vs. Case Temperature 1 DUTY CYCLE DESENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 t1 PD t2 0.01 10−5 DUTY FACTOR, D = t1 / t2 PEAKTJ = (PD x ZqJC x RqJC) + TC SINGLE PULSE 10−4 10−2 10−3 10−1 t1, RECTANGULAR PULSE DURATION (S) Figure 10. Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 5 100 FDH44N50 VDS BVDSS tP L VARY tP TO OBTAIN REQUIRED PEAK IAS VDS IAS + RG VDD VDD − VGS DUT tP 0V IAS 0 0.01W tAV Figure 12. Unclamped Energy Waveforms Figure 11. Unclamped Energy Test Circuit VDS Qg(TOT) VDD RL VDS VGS VGS = 10 V + VDD − VGS VGS = 1 V DUT Qg(TH) 0 Ig(REF) Qgd Qgs Ig(REF) 0 Figure 14. Gate Charge Waveforms Figure 13. Gate Charge Test Circuit tOFF tON VDS td(ON) RL RGS VDS + VDD − VGS td(OFF) tf tr 90% 90% 10% 0 10% 90% DUT VGS 0 VGS 50% 10% PULSE WIDTH 50% Figure 16. Switching Time Waveform Figure 15. Switching Time Test Circuit UniFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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