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FDM3622
N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ
Features
General Description
Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A
Low Miller Charge
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
Low QRR Body Diode
Applications
Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A
Optimized efficiency at high frequencies
Distributed Power Architectures and VRMs.
UIS Capability (Single Pulse and Repetitive Pulse)
Primary Switch for 24V and 48V Systems
RoHS Compliant
High Voltage Synchronous Rectifier
Formerly developmental type 82744
Bottom
Top
Pin 1
S
S
S
S
D
S
D
S
D
G
D
G
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
(Note 1a)
-Pulsed
PD
TJ, TSTG
Units
V
±20
V
4.4
20
Single Pulse Avalanche Energy
EAS
Ratings
100
(Note 3)
54
Power Dissipation
(Note 1a)
2.1
Power Dissipation
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
3.0
(Note 1a)
60
°C/W
Package Marking and Ordering Information
Device Marking
FDM3622
Device
FDM3622
©2014 Fairchild Semiconductor Corporation
FDM3622 Rev.C6
Package
MLP 3.3x3.3
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDM3622 N-Channel PowerTrench® MOSFET
August 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
100
V
VDS = 80V, VGS = 0V
1
TJ = 100°C
250
VGS = ±20V, VDS = 0V
μA
±100
nA
4
V
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Static Drain to Source On Resistance
VGS = VDS, ID = 250μA
2
VGS = 10V, ID = 4.4A
44
VGS = 6.0V, ID = 3.8A
56
80
VGS = 10V, ID = 4.4A , TJ = 150°C
92
120
820
1090
pF
125
170
pF
35
55
pF
3.1
6.2
Ω
60
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 25V, VGS = 0V,
f = 1MHz
VDS = 15mV, f = 1MHz
0.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50V, ID = 4.4A
VGS = 10V, RGEN = 24Ω
VGS = 10V
VDD = 50V
ID = 4.4A
11
20
ns
25
40
ns
35
56
ns
26
42
ns
13
17
nC
3.6
nC
3.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 4.4A
1.25
VGS = 0V, IS = 2.2A
1.0
V
56
ns
108
nC
IF = 4.4A, di/dt = 100A/μs
V
Notes:
1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper.
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: EAS of 54 mJ is based on starting TJ = 25 C; N-ch: L = 3 mH, IAS = 6 A, VDD = 100 V, VGS= 10 V.
FDM3622 Rev.C6
2
www.fairchildsemi.com
FDM3622 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
10
2.5
ID, DRAIN CURRENT (A)
VGS = 10V
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
TA = 25oC
8
VGS = 5V
6
VGS = 4.7V
4
VGS = 4.5V
2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
VGS = 10V, ID = 4.4A
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
Figure 1. On-Region Characteristics
80
120
160
10
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 15V
ID , DRAIN CURRENT (A)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (mΩ)
40
Figure 2. Normalized On-Resistance
vs Junction Temperature
80
70
ID = 4.4A
60
ID = 0.2A
50
8
6
TJ = 150oC
4
TJ = -55oC
TJ = 25oC
2
40
0
4
6
8
3.0
10
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
4.0
4.5
5.0
5.5
6.0
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance vs Gate to
Source Voltage
Figure 4. Transfer Characteristics
1200
10
1000
VDD = 50V
CISS = CGS + CGD
8
C, CAPACITANCE (pF)
VGS , GATE TO SOURCE VOLTAGE (V)
0
TJ, JUNCTION TEMPERATURE (oC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 4.4A
ID = 1A
2
0
0
3
6
9
12
CRSS = CGD
100
VGS = 0V, f = 1MHz
10
15
0.1
Qg, GATE CHARGE (nC)
1
10
100
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Gate Charge Characteristics
FDM3622 Rev.C6
COSS ≅ CDS + CGD
Figure 6. Capacitance vs Drain
to Source Voltage
3
www.fairchildsemi.com
FDM3622 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
20
50
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
10
100us
1
1 ms
10 ms
100 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
SINGLE PULSE
TJ = MAX RATED
1s
10 s
RθJA = 135 oC/W
DC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
TA = 25 oC
0.001
0.1
1
10
100
1
400
0.001
VDS, DRAIN to SOURCE VOLTAGE (V)
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
Figure 7. Forward Bias Safe
Operating Area
Figure 8. Uncalamped Inductive
Switching Capability
1.2
6
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
0.01
0.8
0.6
0.4
VGS = 10V
4
2
0.2
0
0
0
25
50
75
100
125
150
25
50
TA , AMBIENT TEMPERATURE (oC)
100
125
150
Figure 10. Maximum Continuous Drain Current
vs Ambient Temperature
Figure 9. Normalized Power dissipation
vs Ambient Temperature
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.2
VGS = VDS, ID = 250μA
NORMALIZED GATE
THRESHOLD VOLTAGE
75
TA, AMBIENT TEMPERATURE (oC)
1.0
0.8
0.6
ID = 250μA
1.1
1.0
0.9
-80
-40
0
40
80
120
160
-80
TJ, JUNCTION TEMPERATURE (oC)
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold voltage
vs Junction Temperature
FDM3622 Rev.C6
-40
Figure 12. Normalized Drain to Source Breakdown
Voltage vs Junction Temperature
4
www.fairchildsemi.com
FDM3622 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
500
VGS = 10V
o
TA = 25 C
100
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
SINGLE PULSE
CURRENT AS FOLLOWS:
o
RθJA = 135 C/W
I = I25
10
150 – T A
-----------------------125
1
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
0
1
10
2
10
3
10
10
Figure 13. Peak Current Capability
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 135 C/W
1E-3
-4
10
-3
10
-2
10
-1
0
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
2
10
3
10
Figure 14. Transient Thermal Response Curve
FDM3622 Rev.C6
5
www.fairchildsemi.com
FDM3622 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3.30
0.05 C
B
A
2X
8
(3.40)
2.37
5
0.45(4X)
2.15
(1.70)
3.30
(0.40)
KEEP OUT
AREA
(0.65)
0.70(4X)
PIN#1 IDENT
0.05 C
TOP VIEW
0.65
2X
1
4
0.42(8X)
1.95
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
B. DIMENSIONS ARE IN MILLIMETERS.
2.27+0.05
PIN #1 IDENT
(0.50)4X
(0.79)
1
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
4
E. DRAWING FILENAME: MKT-MLP08Srev3.
(0.35)
(1.15)
R0.15
8
0.65
5
1.95
BOTTOM VIEW
0.10
0.05
C A B
C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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