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Dual P-Channel PowerTrench® MOSFET
General Description
Features
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses.
When
connected in the typical common source configuration,
bi-directional current flow is possible.
-3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V
RDS(ON) = 160 m: @ VGS = -2.5 V
RDS(ON) = 240 m: @ VGS = -1.8 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
RoHS Compliant
Free from halogenated compounds and antimony
oxides
PIN1
S1 G1 D2
D1
MicroFET 2X2
D1 G2
D2
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
S2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
Parameter
MOSFET Drain-Source Voltage
VGSS
MOSFET Gate-Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note 1a)
Power dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Units
V
r8
V
-3.0
A
-6
PD
TJ, TSTG
Ratings
-20
Operating and Storage Junction Temperature Range
1.4
0.7
1.8
W
0.8
oC
-55 to +150
Thermal Characteristics
RTJA
Thermal Resistance for Single Operation, Junction-to-Ambient
(Note 1a)
86
RTJA
Thermal Resistance for Single Operation, Junction-to-Ambient
(Note 1b)
173
RTJA
Thermal Resistance for Dual Operation, Junction-to-Ambient
(Note 1c)
69
RTJA
Thermal Resistance for Dual Operation, Junction-to-Ambient
(Note 1d)
151
o
C/W
Package Marking and Ordering Information
Device Marking
027
Device
FDMA1027P
©2010 Fairchild Semiconductor Corporation
Reel Size
7"
Tape Width
8mm
1
Quantity
3000 units
FDMA1027P Rev.D6
FDMA1027P Dual P-Channel PowerTrench® MOSFET
July 2014
FDMA1027P
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250PA
-20
-
-
V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = -250PA,
Referenced to 25°C
-
-12
-
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16V, VGS = 0V
-
-
-1
PA
IGSS
Gate-Body Leakage,
VGS = r8V, VDS = 0V
-
-
r100
nA
-0.4
-0.7
-1.3
V
-
2
-
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250PA
'VGS(th)
'TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250PA,
Referenced to 25°C
RDS(ON)
Static Drain-Source On-Resistance
VGS = -4.5V, ID = -3.0A
-
90
120
VGS = -2.5V, ID = -2.5A
-
120
160
VGS = -1.8V, ID = -1.0A
-
172
240
VGS = -4.5V, ID = -3.0A
TJ = 125°C
-
118
160
m:
ID(on)
On-State Drain Current
VGS = -4.5V, VDS = -5V
-20
-
-
A
gFS
Forward Transconductance
VDS = -5V, ID = -3.0A
-
7
-
S
VDS = -10V, VGS = 0V,
f = 1.0MHz
-
435
-
pF
-
80
-
pF
-
45
-
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -10V, ID = -1A
VGS = -4.5V, RGEN = 6:
VDS = -10V, ID = -3.0A,
VGS = -4.5V
-
9
18
ns
-
11
19
ns
-
15
27
ns
-
6
12
ns
-
4
6
nC
-
0.8
-
nC
-
0.9
-
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-
-
-1.1
A
VSD
Drain-Source Diode Forward Voltage
-
-0.8
-1.2
V
trr
Diode Reverse Recovery Time
-
17
-
ns
Qrr
Diode Reverse Recovery Charge
-
6
-
nC
VGS = 0V, IS = -1.1 A (Note 2)
IF= -3.0A, dIF/dt=100A/Ps
2
FDMA1027P Rev.D6
FDMA1027P Dual P-Channel PowerTrench® MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
1: RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJCis guaranteed by design while RTJA is
determined by the user's board design.
(a) RTJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. For single operation.
(b) RTJA = 173°C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RTJA = 69oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB, For dual operation, configured in parallel.
(d) RTJA = 151oC/W when mounted on a minimum pad of 2 oz copper. For dual operation, configured in parallel.
a) 86oC/W when
mounted on a
1 in2 pad of 2
oz copper.
b) 173oC/W when
mounted on a
minimum pad of
2 oz copper.
c) 69oC/W when
mounted on a
1 in2 pad of 2
oz copper.
d) 151oC/W when
mounted on a
minimum pad of
2 oz copper.
2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%
3
FDMA1027P Rev.D6
FDMA1027P Dual P-Channel PowerTrench® MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
3
6
-2.5V
-2.0V
5
-ID, DRAIN CURRENT (A)
VGS = -1.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-3.5V
-3.0V
4
-1.8V
3
2
-1.5V
1
2.2
1.8
-1.8V
-2.0V
1.4
-2.5V
-3.0V
0
0.5
1
1.5
2
-VDS, DRAIN-SOURCE VOLTAGE (V)
0
2.5
Figure 1. On-Region Characteristics
-4.5V
1
2
3
4
-ID, DRAIN CURRENT (A)
5
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.28
1.4
RDS(ON), ON-RESISTANCE (OHM)
ID = -3.0A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
-50
ID = -1.5A
0.22
0.16
TA = 125oC
0.1
o
TA = 25 C
0.04
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
150
0
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
Figure 3. On-Resistance Variation with
Temperature
10
6
VDS = -5V
-IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
5
-ID, DRAIN CURRENT (A)
-3.5V
1
0.6
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.6
4
3
TA = 125oC
2
o
-55 C
1
25oC
0
0
0.5
1
1.5
2
1
0.1
TA = 125oC
0.01
25oC
-55oC
0.001
0.0001
2.5
0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
0.2
0.4
0.6
0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
4
FDMA1027P Rev. D6
FDMA1027P Dual P-Channel PowerTrench® MOSFET
Typical Characteristics
700
f = 1MHz
VGS = 0 V
ID = -3.0A
600
4
VDS = -5V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
-15V
3
-10V
2
500
400
Ciss
300
200
Coss
1
100
Crss
0
0
0
1
2
3
Qg, GATE CHARGE (nC)
4
5
0
Figure 7. Gate Charge Characteristics
4
8
12
16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics
ID, DRAIN CURRENT (A)
100
10
100us
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
DC
1
0.1
VGS = -4.5V
SINGLE PULSE
RTJA = 173oC/W
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operation Area
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
5
FDMA1027P Rev. D6
FDMA1027P Dual P-Channel PowerTrench® MOSFET
Typical Characteristics
FDMA1027P Dual P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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6
FDMA1027P Rev. D6
tm
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Datasheet contains the design specifications for product development. Specifications
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Rev. I68
7
FDMA1027P Rev. D6
FDMA1027P Dual P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
®*
®
AX-CAP®*
FRFET®
®
SM
BitSiC™
Global Power Resource
PowerTrench
TinyBoost®
GreenBridge™
PowerXS™
Build it Now™
TinyBuck®
Programmable Active Droop™
CorePLUS™
Green FPS™
TinyCalc™
®
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™
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Marking Small Speakers Sound Louder
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Saving our world, 1mW/W/kW at a time™
EcoSPARK®
and Better™
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SignalWise™
EfficentMax™
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TRUECURRENT®*
SmartMax™
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MicroFET™
®
Solutions for Your Success™
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MicroPak2™
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STEALTH™
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Ultra FRFET™
SuperFET®
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UniFET™
SuperSOT™-3
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FACT®
®
VCX™
OptoHiT™
SuperSOT™-6
FAST
®
VisualMax™
OPTOLOGIC
SuperSOT™-8
FastvCore™
®
®
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SyncFET™
XS™
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Sync-Lock™
仙童 ™
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