FDMA2002NZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA2002NZ Dual N-Channel PowerTrench“ MOSFET General Description Features This device is designed specifically as a single package x 2.9 A, 30 V RDS(ON) = 123 m: @ VGS = 4.5 V „ RDS(ON) = 140 m: @ VGS = 3.0 V solution for dual switching requirements in cellular handset and other ultra-portable applications. RDS(ON) = 163 m: @ VGS = 2.5 V It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. x Low profile – 0.8 mm maximum – in the new package „ MicroFET 2x2 mm The x HBM ESD protection level = 1.8kV (Note 3) „ MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to x RoHS Compliant „ linear mode applications. „ Free from halogenated compounds and antimony oxides PIN 1 S1 G1 D1 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D2 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID PD TJ, TSTG TA=25oC unless otherwise noted Ratings Units 30 V Gate-Source Voltage r12 V Drain Current – Continuous (TC = 25°C, VGS = 4.5V) 2.9 – Continuous (TC = 25°C, VGS = 2.5V) 2.7 – Pulsed 10 Power Dissipation for Single Operation (Note 1a) 1.5 Power Dissipation for Single Operation (Note 1b) 0.65 Operating and Storage Temperature –55 to +150 A W qC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 83 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 193 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 68 (Dual Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 145 (Dual Operation) qC/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 002 FDMA2002NZ 7’’ 8mm 3000 units ”20  Fairchild Semiconductor Corporation FDMA2002NZ Rev B5 (W) FDMA2002NZ Dual N-Channel PowerTrench“ MOSFET July 2014 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 PA VGS = 0 V, ID = 250 PA, Referenced to 25°C 30 V 25 mV/°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 PA Gate–Body Leakage Current VGS = ± 12 V, VDS = 0 V ±10 PA 1.5 V On Characteristics VGS(th) 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 PA VDS = VGS, ID = 250 PA, Referenced to 25°C 0.4 1.0 –3 mV/qC VGS = 4.5V, ID = 2.9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85°C VGS = 3.0V, ID = 2.7A, TC = 150°C VGS = 2.5V, ID = 2.5A, TC = 150°C 75 84 92 95 138 150 123 140 163 166 203 268 m: VDS = 15 V, f = 1.0 MHz 190 220 pF 30 40 pF 20 30 pF 6 12 ns 8 16 ns 12 21 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge V GS = 0 V, (Note 2) VDD = 15 V, VGS = 4.5 V, VDS = 15 V, VGS = 4.5 V ID = 1 A, RGEN = 6 : ID = 2.9 A, 2 10 ns 2.4 3.0 nC 0.35 nC 0.75 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Source–Drain Diode Forward Current VSD Source–Drain Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IS = 2.0 A IS = 1.1 A IF = 2.9 A, dIF/dt = 100 A/μs 0.9 0.8 10 2 2.9 A 1.2 1.2 V ns nC FDMA2002NZ Rev B5 (W) FDMA2002NZ Dual N-Channel PowerTrench“ MOSFET Electrical Characteristics 1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design. (a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RTJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. (d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)69 oC/W when mounted on a 1 in2 pad of 2 oz copper. d)151 oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA2002NZ Rev B5 (W) FDMA2002NZ Dual N-Channel PowerTrench“ MOSFET Notes: 1.8 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V VGS = 4.5V ID, DRAIN CURRENT (A) 8 2.7V 3.5V 2.9V 6 2.0V 4 2 1.5V 0 VGS = 2.0V 1.6 1.4 2.9V 3.5V 4.0V 4.5V 1 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0 Figure 1. On-Region Characteristics. 2 4 6 ID, DRAIN CURRENT (A) 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.24 1.8 ID = 2.9A VGS = 4.5V ID = 1.45A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.7V 0.8 0 1.6 1.4 1.2 1 0.8 0.6 0.2 0.16 o TA = 125 C 0.12 0.08 o TA = 25 C 0.04 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 VGS = 0V TA = -55oC o -IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 2.5V 1.2 125 C 8 25oC 6 4 2 0 10 1 0.1 o TA = 125 C 0.01 25oC -55oC 0.001 0.0001 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA2002NZ Rev B5 (W) FDMA2002NZ Dual N-Channel PowerTrench“ MOSFET Typical Characteristics FDMA2002NZ Dual N-Channel PowerTrench“ MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-X06 FDMA2002NZ Rev B5 (W) tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® ® SM BitSiC™ Global Power Resource PowerTrench TinyBoost® GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Programmable Active Droop™ CorePLUS™ Green FPS™ TinyCalc™ ® QFET CorePOWER™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ QS™ Gmax™ TINYOPTO™ CTL™ Quiet Series™ GTO™ TinyPower™ Current Transfer Logic™ RapidConfigure™ IntelliMAX™ TinyPWM™ DEUXPEED® ISOPLANAR™ ™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder TranSiC™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TriFault Detect™ SignalWise™ EfficentMax™ MegaBuck™ TRUECURRENT®* SmartMax™ ESBC™ MICROCOUPLER™ μSerDes™ SMART START™ MicroFET™ ® Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® UHC® STEALTH™ MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperFET® MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-3 mWSaver® FACT® ® VCX™ OptoHiT™ SuperSOT™-6 FAST ® VisualMax™ OPTOLOGIC SuperSOT™-8 FastvCore™ ® ® VoltagePlus™ OPTOPLANAR SupreMOS FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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