FDMA507PZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA507PZ Single P-Channel PowerTrench® MOSFET -20 V, -7.8 A, 24 mΩ Features General Description „ Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. „ Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A „ Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A The MicroFET 2X2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications. „ Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A „ Low Profile - 0.8 mm maximum - in the package MicroFET 2X2 mm „ HBM ESD protection level > 3.2K V typical (Note3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage ID Drain Current -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -7.8 -24 Power Dissipation TA = 25 °C (Note 1a) 2.4 Power Dissipation TA = 25 °C (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 52 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 145 °C/W Package Marking and Ordering Information Device Marking 507 Device FDMA507PZ ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C Package MicroFET 2X2 1 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMA507PZ Single P-Channel PowerTrench® MOSFET May 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V -20 V -12 mV/°C -1 µA ±10 µA -1.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C rDS(on) gFS Drain to Source On Resistance Forward Transconductance -0.4 -0.5 3 mV/°C VGS = -5 V, ID = -7.8 A 19 24 VGS = -4.5 V, ID = -7 A 20 25 VGS = -2.5 V, ID = -5.5 A 24 35 VGS = -1.8 V, ID = -4 A 29 45 VGS = -5 V, ID = -7.8 A, TJ = 125 °C 26 34 VDS = -5 V, ID = -7.8 A 33 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 1515 2015 pF 265 355 pF 240 360 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = -10 V, ID = -7.8 A VGS = -5 V, RGEN = 6 Ω 6.4 13 ns 14 25 ns ns td(off) Turn-Off Delay Time 192 307 tf Fall Time 96 154 ns Qg(TOT) Total Gate Charge 30 42 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -7.8 A VGS = -5 V 2 nC 7.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.0 A (Note 2) IF = -7.8 A, di/dt = 100 A/µs -0.6 -1.2 V 66 106 ns 44 70 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C 2 www.fairchildsemi.com FDMA507PZ Single P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 2.5 24 VGS = -4.5 V -ID, DRAIN CURRENT (A) 20 VGS = -3 V VGS = -2.5 V 16 12 VGS = -1.8 V 8 4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -5 V 2.0 VGS = -1.8 V 1.5 1.0 VGS = -3 V 0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 12 16 -ID, DRAIN CURRENT(A) 20 24 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDS = -5 V 16 12 TJ = 150 oC TJ = 25 oC 4 TJ = -55 oC 0.5 1.0 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 120 80 TJ = 125 oC 40 TJ = 25 oC 0 1 20 10 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 2.0 Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C ID = - 7.8 A Figure 4. On-Resistance vs Gate to Source Voltage 24 0 0 4 160 ID = -7.8 A VGS = -5 V 8 VGS = -5 V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 20 VGS = -4.5 V 0.5 0.2 0.4 0.6 0.8 1.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 0.6 -75 VGS = -2.5 V 0 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMA507PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 10000 ID = -7.8 V CAPACITANCE (pF) 4 VDD = -8 V 3 VDD = -10 V 2 VDD = -12 V 1 0 0 10 20 30 Ciss 1000 Coss f = 1 MHz VGS = 0 V 100 0.1 40 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics -1 20 50 -2 VGS = 0 V 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT (A) 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 10 -3 10 -4 10 -5 TJ = 125 oC 10 -6 10 -7 10 -8 10 1 ms 1 0.1 3 6 10 ms THIS AREA IS LIMITEDBY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED RθJA = 145 oC/W 1s 10 s DC TA = 25 oC -10 0 100 us 10 TJ = 25 oC -9 10 10 Crss 9 12 0.01 0.1 15 1 80 10 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 1000 SINGLE PULSE RθJA = 145 oC/W o 100 TA = 25 C 10 1 0.5 -4 10 -3 -2 10 10 -1 10 t, PULSE WIDTH (sec) 1 10 100 1000 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C 4 www.fairchildsemi.com FDMA507PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 145 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) 10 100 1000 Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C 5 www.fairchildsemi.com FDMA507PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMA507PZ Single P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C 7 www.fairchildsemi.com FDMA507PZ Single P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM™ AccuPower™ F-PFS™ ®* PowerTrench® Auto-SPM™ FRFET® SM Build it Now™ Global Power Resource PowerXS™ The Power Franchise® ® CorePLUS™ Programmable Active Droop™ Green FPS™ CorePOWER™ QFET® Green FPS™ e-Series™ CROSSVOLT™ Gmax™ QS™ TinyBoost™ CTL™ Quiet Series™ GTO™ TinyBuck™ RapidConfigure™ Current Transfer Logic™ IntelliMAX™ TinyCalc™ DEUXPEED® ISOPLANAR™ ™ TinyLogic® Dual Cool™ MegaBuck™ TINYOPTO™ ® Saving our world, 1mW/W/kW at a time™ EcoSPARK MICROCOUPLER™ TinyPower™ SignalWise™ EfficentMax™ MicroFET™ TinyPWM™ SmartMax™ ESBC™ MicroPak™ TinyWire™ SMART START™ MicroPak2™ ® TriFault Detect™ SPM® MillerDrive™ TRUECURRENT™* ® MotionMax™ STEALTH™ Fairchild µSerDes™ ® Motion-SPM™ SuperFET™ Fairchild Semiconductor OptiHiT™ SuperSOT™-3 FACT Quiet Series™ OPTOLOGIC® SuperSOT™-6 FACT® UHC® ® OPTOPLANAR® SuperSOT™-8 FAST ® Ultra FRFET™ SupreMOS™ FastvCore™ UniFET™ SyncFET™ FETBench™ VCX™ Sync-Lock™ FlashWriter® * PDP SPM™ VisualMax™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com