MOSFET – Single, P-Channel,
POWERTRENCH)
-30 V, -11 A, 13.5 mW
FDMA6676PZ
Description
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This device is an ultra low resistance P−Channel FET. It is designed
for power line load switching applications and reverse polarity
protection. It is especially optimized for voltage rails that can climb as
high as 25 V. Typical end systems include laptop computers, tablets
and mobile phone. Applications include battery protection, input
power line protection and charge path protection, including USB
and other charge paths. The FDMA6676PZ has an enhanced VGS
rating of 25 V specifically designed to simplify installation. When
used as reverse polarity protection, with gate tied to ground and drain
tied to V input, it is designed to support operating input voltages that
can raise as high as 25 V without the need for external Zener
protection on the gate. Its small 2 x 2 x 0.8 form factor make it an ideal
part for mobile and space constrained applications.
Pin 1
D
D
G
Drain
D
D
Source
S
WDFN6
CASE 483AV
MARKING DIAGRAM
Features
•
•
•
•
•
•
•
Max rDS(on) = 13.5 mW @ VGS = −10 V
25 V VGS Extended Operating Rating
30 V VDS Blocking
2 x 2 mm Form Factor
Low Profile − 0.8 mm Maximum
Integrated Protection Diode
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
&2&K
&Z676
&.
&2
&K
&Z
676
&.
= 2−Digit Date Code
= Lot Code
= Assembly Plant Code
= Specific Device Code
= Pin 1 Dot
PIN CONNECTION
D
D
D
D
G
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
April, 2021 − Rev. 3
1
Publication Order Number:
FDMA6676PZ/D
FDMA6676PZ
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Unit
VDS
Drain to Source Voltage
−30
V
VGS
Gate to Source Voltage
±25
V
−11
A
ID
Parameter
Drain Current − Continuous,
TA = 25°C (Note 1a)
− Pulsed
PD
TJ, TSTG
(Note 3)
Power Dissipation
TA = 25°C (Note 1a)
Power Dissipation
TA = 25°C (Note 1b)
Operating and Storage Junction Temperature Range
−165
W
2.4
0.9
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Value
Unit
RqJA
Thermal Resistance, Junction to Ambient
Characteristic
(Note 1a)
52
°C/W
RqJA
Thermal Resistance, Junction to Ambient
(Note 1b)
145
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BVDSS
−30
V
Drain to Source Breakdown Voltage
ID = −250 mA, VGS = 0 V
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient
ID = −250 mA,
Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = −24 V, VGS = 0 V
−1
mA
IGSS
Gate to Source Leakage Current
VGS = ±25 V, VDS = 0 V
±10
mA
−2.6
V
−19
mV/°C
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = −250 mA
DVGS(th) / DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = −250 mA,
Referenced to 25°C
rDS(on)
−2
5.9
mV/°C
Static Drain to Source On Resistance VGS = −10 V, ID = −11 A
11
13.5
VGS = −4.5 V, ID = −8 A
19
27
14.5
21
VGS = −10 V, ID = −11 A, TJ = 125°C
gFS
−1.2
Forward Transconductance
VDD = −5 V, ID = −11 A
38
mW
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Crss
Rg
VDS = −15 V, VGS = 0 V, f = 1 MHz
1440
2160
pF
Output Capacitance
477
720
pF
Reverse Transfer Capacitance
458
690
pF
Gate Resistance
12
W
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg
8.8
18
ns
19
34
ns
Turn−Off Delay Time
87
139
ns
Fall Time
72
115
ns
33
46
nC
Turn−On Delay Time
Rise Time
Total Gate Charge
VDD = −15 V, ID = −11 A,
VGS = −10 V, RGEN = 6 W
VGS = 0 V to −10 V,
VDD = −15 V, ID = −11 A
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2
FDMA6676PZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
28
nC
SWITCHING CHARACTERISTICS
Qg
Total Gate Charge
VGS = 0 V to −4.5 V,
VDD = −15 V, ID = −11 A
20
Qgs
Gate to Source Charge
VDD = −15 V, ID = −11 A
4.5
nC
Qgd
Gate to Drain “Miller” Charge
VDD = −15 V, ID = −11 A
13
nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = −2 A (Note 2)
−0.7
−1.2
V
VGS = 0 V, IS = −11 A (Note 2)
−0.9
−1.4
V
trr
Reverse Recovery Time
IF = -11 A, di/dt = 100 A/ms
31
50
ns
Qrr
Reverse Recovery Charge
9
18
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqCA is determined
by the user’s board design.
a. 52°C/W when mounted
on a 1 in2 pad of 2 oz copper.
G
DF
DS
SF
SS
G
DF
DS
SF
SS
b. 145°C/W when mounted
on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Pulse Id refers to Forward Bias Safe Operation Area.
ORDERING INFORMATION
Device Marking
Device
Package
Package Method†
676
FDMA6676PZ
WDFN−6
3000 Tape / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
FDMA6676PZ
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
4
VGS = −10 V
Normalized Drain to Source
On−Resistance
−ID, Drain Current (A)
100
VGS = −6 V
80
60
VGS = −5.5 V
40
VGS = −4.5 V
20
0
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
VGS = −3.5 V
0
1
2
3
4
VGS = −5.5 V
1
0
20
40
60
80
100
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
80
ID = −11 A
VGS = −10 V
1.1
1.0
0.9
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
60
ID = −11 A
40
TJ = 125°C
20
0.8
TJ = 25°C
0.7
−75 −50 −25
0
25
50
0
75 100 125 150
2
4
100
−IS, Reverse Drain Current (A)
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
80
VDS = −5 V
60
TJ = 150°C
40
TJ = 25°C
20
TJ = −55°C
1
2
3
4
5
8
10
Figure 4. On−Resistance vs. Gate
to Source Voltage
Figure 3. Normalized On−Resistance
vs. Junction Temperature
100
6
−VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (°C)
−ID, Drain Current (A)
VGS = −6 V
−ID, Drain Current (A)
1.2
0
VGS = −10 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
−VDS, Drain to Source Voltage (V)
rDS(on), Drain to Source
On−Resistance (mW)
Normalized Drain to Source
On−Resistance
VGS = −4.5 V
2
0
5
1.4
1.3
VGS = −3.5 V
3
VGS = 0 V
10
TJ = 150°C
1
TJ = 25°C
0.1
TJ = −55°C
0.01
0.001
0.0
6
0.2
0.4
0.6
0.8
1.0
1.2
−VSD, Body Diode Forward Voltage (V)
−VGS, Gate to Source Voltage (A)
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
Figure 5. Transfer Characteristics
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4
1.4
FDMA6676PZ
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
10000
ID = −11 A
8
VDD = −10 V
Capacitance (pF)
−VGS, Gate to Source Voltage (V)
10
6
VDD = −15 V
4
VDD = −20 V
Ciss
1000
Coss
Crss
2
0
f = 1 MHz
VGS = 0 V
0
10
100
0.1
40
30
20
Qg, Gate Charge (nC)
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
300
10
100ms
1
1 ms
10 ms
Single Pulse
TJ = Max Rated
RqJA = 145°C/W
TA = 25°C
0.1
0.01
0.01
P(PK), Peak Transient Power (W)
−ID, Drain Current (A)
1000
This Area Is
Limited by rDS(on)
100
100 ms
Curve Bent to
Measured Data
0.1
1
1s
10 s
DC
10
Single Pulse
RqJA = 145°C/W
TA = 25°C
100
10
1
0.1
10−4
100 200
10−3
r(t), Normalized Effective Transient
Thermal Resistance
0.01
1
10
100
1000
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
Notes:
PDM
ZqJA(t) = r(t) x RqJA
RqJA = 145°C/W
Peak TJ = PDM x ZqJA(t) + TA
Duty Cycle, D = t1/t2
Single Pulse
0.001
0.0001
10−4
10−1
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Forward Bias Safe Operating Area
0.1
10−2
t, Pulse Width (sec)
−VDS, Drain to Source Voltage (V)
2
1
30
10
1
−VDS, Drain to Source Voltage (V)
10−3
10−2
10−1
1
10
100
1000
t, Rectangular Pulse Duration (sec)
Figure 11. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2.05X2.05, 0.65P
CASE 483AV
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13671G
WDFN6 2.05X2.05, 0.65P
DATE 02 APR 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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