FDMA7630

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA7630 Single N-Channel PowerTrench® MOSFET 30 V, 11 A, 13 mΩ Features General Description „ Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 11 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. „ Max rDS(on) = 20 mΩ at VGS = 4.5 V, ID = 9 A „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ Free from halogenated compounds and antimony oxides Application „ RoHS compliant Pin 1 „ DC – DC Buck Converters D D G Drain Bottom Drain Contact D D D D G S Source S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Drain Current -Continuous ID TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±20 V 11 24 Power Dissipation TA = 25 °C (Note 1a) 2.4 Power Dissipation TA = 25 °C (Note 1b) 0.9 Operating and Storage Junction Temperature Range –55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 52 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 145 °C/W Package Marking and Ordering Information Device Marking 630 Device FDMA7630 ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C5 Package MicroFET 2x2 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET May 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 3.0 V 30 V 15 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C –6 VGS = 10 V, ID = 11 A 10 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 9 A 14 20 VGS = 10 V, ID = 11 A, TJ = 125 °C 14 18 VDS = 5 V, ID = 11 A 36 gFS Forward Transconductance 1.0 2.0 mV/°C 13 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V f = 1.0 MHz 1020 1360 pF 315 415 pF 35 55 pF Ω 1.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 15 V, ID = 11 A VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 4.5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 11 A 8 15 ns 3 10 ns 19 34 ns 3 10 ns 16 22 nC 8 10 nC 3.0 nC 2.2 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A IF = 11 A, di/dt = 100 A/μs 2 (Note 2) A 0.8 1.2 V 21 33 ns 6 12 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C5 2 www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 24 3.0 ID, DRAIN CURRENT (A) 20 16 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 4 V VGS = 3.5 V 12 8 4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 VGS = 4 V VGS = 4.5 V 1.5 1.0 VGS = 6 V VGS = 10 V 0.5 2.0 0 4 8 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 24 60 ID = 11 A VGS = 10 V ID = 11 A 40 30 10 TJ = 25 oC -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) 125 oC 12 TJ = 25 oC TJ = -55 oC 4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 8 10 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 5.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C5 6 24 VDS = 5 V 0 1.0 4 Figure 4. On-Resistance vs Gate to Source Voltage 16 8 2 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = TJ = 125 oC 20 0 -50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 50 Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 20 12 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 24 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 2.5 3 www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 11 A 1000 CAPACITANCE (pF) 8 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Ciss Coss 100 2 f = 1 MHz VGS = 0 V 0 0 5 10 15 10 0.1 20 1 Qg, GATE CHARGE (nC) 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 50 1000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) Crss 10 1 ms 1 THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s RθJA = 145 oC/W DERIVED FROM TEST DATA TA = 25 oC 0.01 0.01 10 s DC 0.1 1 10 100 SINGLE PULSE RθJA = 145 oC/W VGS = 10 V TA = 25 oC 100 10 1 0.1 -4 10 -3 10 VDS, DRAIN to SOURCE VOLTAGE (V) -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 145 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C5 4 www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2.0 0.05 C A B 2X 2.0 1.70 (0.20) 1.00 PIN#1 IDENT 0.05 C TOP VIEW No Traces allowed in this Area 4 6 2X 1.05 2.30 0.10 C 0.47(6X) 0.08 C 1 SIDE VIEW C 0.40(6X) 0.65 RECOMMENDED LAND PATTERN OPT 1 SEATING PLANE (0.15) 3 (0.50) 1.70 PIN #1 IDENT 1 0.45 (0.20) (0.20)4X 3 1.00 6 (6X) 4 (0.50) 1.05 6 4 0.65 1.30 0.10 0.05 BOTTOM VIEW NOTES: A. PACKAGE DOES NOT FULLY CONFORM TO JEDEC MO-229 REGISTRATION B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. E. DRAWING FILENAME: MKT-MLP06Lrev4. (6X) C A B C 0.66 2.30 0.47(6X) 1 0.65 3 0.40(7X) RECOMMENDED LAND PATTERN OPT 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com