FDMA8878

DATA SHEET www.onsemi.com + MOSFET – N-Channel, POWERTRENCH) 30 V, 9.0 A, 16 mW WDFN6 CASE 511CZ FDMA8878, FDMA8878-F130 Bottom Drain Contact D 1 6 D General Description D 2 5 D This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance. G 3 4 S Features • • • • • MARKING DIAGRAM Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A High Performance Trench Technology for Extremely Low RDS(on) Fast Switching Speed Pb−Free, Halide Free and RoHS Compliant ZXYKK 878 Applications • DC−DC Buck Converters • Load Switch in NB • Notebook Battery Power Management Z XY KK 878 ABSOLUTE MAXIMUM RATINGS PIN ASSIGNMENT TA = 25°C unless otherwise noted. Parameter Symbol Ratings Unit VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage (Note 3) ±20 V ID PD TJ, TSTG Drain Current Continuous (Package Limited), TC = 25°C Continuous, TA = 25°C (Note 1a) Pulsed 9.0 40 Power Dissipation, TA = 25°C (Note 1a) (Note 1b) 2.4 0.9 Operating and Storage Junction Temperature Range = Assembly Plant Code = 2−Digit Date Code = Lot Run Code = Specific Device Code 1 D A 10 W −55 to +150 °C D D 6 D G S D S ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol RqJA Parameter Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) © Semiconductor Components Industries, LLC, 2012 February, 2022 − Rev. 4 Ratings Unit °C/W 52 145 1 Publication Order Number: FDMA8878/D FDMA8878, FDMA8878−F130 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 30 − − V DBV DSS DT J Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 26 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V − − 1 mA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V − − ±100 nA BVDSS ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250 mA 1.2 1.8 3.0 V DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − −5 − mV/°C Static Drain to Source On–Resistance ID = 9.0 A, VGS = 10 V, − 13 16 mW ID = 8.5 A, VGS = 4.5 V − 16 19 ID = 9.0 A, VGS = 10 V, TJ = 125°C − 17 21 VDD = 5 V, ID = 9.0 A − 41 − S VDS = −15 V, VGS = 0 V, f = 1.0 MHz − 539 720 pF − 172 230 DT J RDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance − 24 35 RG Gate Resistance − 1.3 − W − 6 12 ns − 2 10 Turn–Off Delay Time − 14 25 Fall Time − 2 10 VGS = 0 V to 10 V, VDD = 15 V, ID = 9.0 A − 8.5 12 nC VGS = 0 V to 4.5 V, VDD = 15 V, ID = 9.0 A − 4.1 5.8 nC VDD = 15 V, ID = 9.0 A − 1.6 − − 1.2 − VGS = 0 V, IS = 2.0 A (Note 2) − 0.75 1.2 VGS = 0 V, IS = 9.0 A (Note 2) − 0.86 1.2 IF = 9.0 A, di/dt = 100 A/ms − 16 28 ns − 4 10 nC SWITCHING CHARACTERISTICS td(on) tr Turn–On Delay Time Rise Time td(off) tf Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 9.0 A, VGS = 10 V, RGEN = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b) 145°C/W when mounted on a minimum pad of 2 oz copper. a) 52°C/W when mounted on a 1 in2 pad of 2 oz. copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 3. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. www.onsemi.com 2 FDMA8878, FDMA8878−F130 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 6 40 ID, Drain Current (A) 32 VGS = 4.5 V VGS = 4 V 24 VGS = 3.5 V Pulse Duration = 80 ms Duty Cycle = 0.5% Max 16 VGS = 3 V 8 VGS = 3 V 5 Normalized Drain to Source On−Resistance VGS = 10 V VGS = 3.5 V Pulse Duration = 80 ms Duty Cycle = 0.5% Max 4 3 VGS = 4 V 2 1 VGS = 10 V VGS = 4.5 V 0 0 1 2 0 4 3 0 8 60 ID = 9 A VGS = 10 V RDS(on), Drain to Source On−Resistance (mW) Normalized Drain to Source On−Resistance 1.4 1.3 1.2 1.1 1.0 0.9 ID = 9 A Pulse Duration = 80 ms Duty Cycle = 0.5% Max 50 40 30 TJ = 125°C 20 0.8 0.7 −75 TJ = 25°C −50 −25 0 25 50 75 100 125 10 150 2 4 TJ, Junction Temperature (5C) 100 VDD = 5 V Pulse Duration = 80 ms Duty Cycle = 0.5% Max TJ = 125°C 20 TJ = 25°C 10 0 1.5 TJ = −55°C 2.0 2.5 3.0 3.5 8 10 Figure 4. On−Resistance vs. Gate−to−Source Voltage IS, Reverse Drain Current (A) ID, Drain Current (A) 30 6 VGS, Gate to Source Voltage (V) Figure 3. Normalized On−Resistance vs. Junction Temperature 40 40 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage Figure 1. On−Region Characteristics 1.5 32 16 24 ID, Drain Current (A) VDS, Drain to Source Voltage (V) VGS = 0 V 10 TAJ = 125°C 1 TJ = 25°C 0.1 TJ = −55°C 0.01 0.001 0.2 4.0 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) VGS, Gate to Source Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 FDMA8878, FDMA8878−F130 TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) 1000 VDD = 10 V ID = 9 A Ciss 8 VDD = 15 V Capacitance (pF) VGS, Gate to Source Voltage (V) 10 6 VDD = 20 V 4 Coss 100 Crss 2 0 0 2 4 6 8 10 0.1 10 f = 1 MHz VGS = 0 V 1 Qg, Gate Charge (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 100 P(pk), Peak Transient Power (W) ID, Drain Current (A) 50 10 1 0.1 This area is limited by RDS(on) 1 ms 10 ms 100 ms 1s 10 s DC Single Pulse TJ = Max Rated RqJA = 145°C/W TA = 25°C 0.01 0.1 1 10 10 1 0.5 0.001 80 Single Pulse RqJA = 145°C/W TA = 25°C 0.01 0.1 VDS, Drain to Source Voltage (V) ZqJA, Normalized Thermal Impedance 1 100 10 1 1000 t, Pulse Width (s) Figure 9. Maximum Safe Operating Area 2 30 10 VDS, Drain to Source Voltage (V) Figure 10. Single Pulse Maximum Power Dissipation Duty Cycle−Descending Order D = 0.5 0.2 PDM 0.1 0.1 0.01 t1 Single Pulse RqJA = 145°C/W 0.005 0.001 t2 0.05 0.02 0.01 0.01 NOTES: Duty Factor D = t1 / t2 PEAK TJ = PDM × ZqJA × RqJA + TA 0.1 1 10 t, Rectangular Pulse Duration (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 FDMA8878, FDMA8878−F130 ORDERING INFORMATION Package Type Pin 1 Orientation in Tape Cavity Shipping† FDMA8878 WDFN6 (Pb−Free/Halide Free) Top Left 3000 / Tape & Reel FDMA8878−F130 WDFN6 (Pb−Free/Halide Free) Top Right 3000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 511CZ ISSUE O 0.05 C 2.0 DATE 31 JUL 2016 1.70 A B 2X (0.20) 1.00 No Traces allowed in 4 6 this Area 2.0 0.05 TOP VIEW PIN#1 IDENT 1.05 2.30 0.47(6X) C 2X 1 3 0.40(6X) 0.65 0.10 RECOMMENDED LAND PATTERN OPT 1 0.75±0.05 C 0.20±0.05 1.70 0.08 C SIDE VIEW 0.025±0.025 C 0.45 (0.20) 1.00 6 SEATING PLANE 4 2.00±0.05 (0.15) 1.05 (0.50) 0.30±0.05 0.90±0.05 PIN #1 IDENT 2.30 (0.20)4X 1 0.47(6X) 3 0.28±0.05 1 0.56±0.05 (6X) 0.65 3 0.40(7X) RECOMMENDED LAND PATTERN OPT 2 1.00±0.05 2.00±0.05 (0.50) 0.66 NOTES: 6 4 0.30±0.05 (6X) 0.65 1.30 0.10 C 0.05 C BOTTOM VIEW A B A. PACKAGE DOES NOT FULLY CONFORM TO JEDEC MO−229 REGISTRATION B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. DOCUMENT NUMBER: DESCRIPTION: 98AON13614G WDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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