Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDMA908PZ
Single P-Channel PowerTrench® MOSFET
-12 V, -12 A, 12.5 mΩ
Features
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
General Description
Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and zener
diode protection against ESD. The MicroFET 2X2 package
offers exceptional thermal performance for its physical size and
is well suited to linear mode applications.
Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
HBM ESD protection level > 2.8 kV typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
Pin 1
D
D
G
Bottom Drain Contact
Drain
Source
D
D
D
D
D
D
G
S
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Curre
ID
-Continuous
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-12
Units
V
±8
V
-12
-40
Power Dissipation
TA = 25 °C
(Note 1a)
2.4
Power Dissipation
TA = 25 °C
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
52
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
145
°C/W
Package Marking and Ordering Information
Device Marking
908
Device
FDMA908PZ
©2013 Fairchild Semiconductor Corporation
FDMA908PZ Rev.E3
Package
MicroFET 2X2
1
Reel Size
7”
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMA908PZ Single P-Channel PowerTrench® MOSFET
February 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -9.6 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
-12
V
-10
mV/°C
-1
μA
±10
μA
-1
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
2.8
VGS = -4.5 V, ID = -12 A
10
VGS = -2.5 V, ID = -10 A
13
18
VGS = -1.8 V, ID = -8 A
18
28
VGS = -4.5 V, ID = -12 A,
TJ = 125 °C
13
16
VDD = -5 V, ID = -12 A
63
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
-0.4
-0.6
mV/°C
12.5
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -6 V, VGS = 0 V,
f = 1 MHz
2638
3957
pF
649
974
pF
602
903
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -6 V, ID = -12 A,
VGS = -4.5 V, RGEN = 6 Ω
VGS = -4.5 V, VDD = -6 V,
ID = -12 A
11
21
ns
12
23
ns
131
223
ns
71
121
ns
24
34
nC
3.4
nC
5.3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -2 A
(Note 2)
-0.6
-1.2
V
VGS = 0 V, IS = -12 A
(Note 2)
-0.8
-1.2
V
IF = -12 A, di/dt = 100 A/μs
26
42
ns
8.5
17
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2013 Fairchild Semiconductor Corporation
FDMA908PZ Rev.E3
2
www.fairchildsemi.com
FDMA908PZ Single P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
40
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
VGS = -3 V
30
VGS = -2.5 V
VGS = -1.8 V
20
VGS = -1.5 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
2
VGS = -1.8 V
1
VGS = -4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
10
20
30
40
-ID, DRAIN CURRENT (A)
Figure 2. Normalized On- Resistance
vs Drain Current and Gate Voltage
60
ID = -12A
VGS = -4.5V
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
SOURCE ON-RESISTANCE (mΩ)
1.4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = -12 A
40
TJ = 125 oC
20
TJ = 25 oC
0
1.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
-IS, REVERSE DRAIN CURRENT (A)
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
VGS = -3 V
VGS = -2.5 V
2.0
Figure 1. On-Region Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -1.5 V
30
VDS = -5 V
TJ = 150 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
0.0
0.5
1.0
1.5
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
2.0
0.4
0.8
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMA908PZ Rev.E3
3
www.fairchildsemi.com
FDMA908PZ Single P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ID = -12A
Ciss
VDD = -4V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
5000
4.5
3.0
VDD = -6V
VDD = -8V
1.5
5
10
15
20
25
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 7. Gate Charge Characteristics
-3
60
10
VDS = 0 V
-4
10
-ID, DRAIN CURRENT (A)
-Ig, GATE LEAKAGE CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
300
0.1
0.0
0
Coss
1000
TJ = 125 oC
-5
10
-6
10
-7
10
-8
10
TJ = 25 oC
10
1 ms
10 ms
1
0.1
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
DC
RθJA = 145 oC/W
-9
10
TA = 25 oC
-10
10
THIS AREA IS
LIMITED BY rDS(on)
0
5
10
0.01
0.01
15
0.1
CURVE BENT TO
MEASURED DATA
1
10
50
-VDS, DRAIN to SOURCE VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current
vs Gate to Source Voltage
Figure 10. Gate Leakage Current
vs Gate to Source Voltage
P(PK), PEAK TRANSIENT POWER (W)
100
SINGLE PULSE
o
RθJA = 145 C/W
o
TA = 25 C
10
1
0.1
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11.
©2013 Fairchild Semiconductor Corporation
FDMA908PZ Rev.E3
Single Pulse Maximum Power Dissipation
4
www.fairchildsemi.com
FDMA908PZ Single P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 145 C/W
(Note 1b)
0.01
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMA908PZ Rev.E3
5
www.fairchildsemi.com
FDMA908PZ Single P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2.05
0.05 C
A
(0.20)
(0.45)
B
2X
1.00
6 5
4
2.05
0.66 2.30
1.35
1.05
0.05 C
PIN #1 LOCATION
0.475(6X)
2X
TOP VIEW
1
2
3
0.40 (6X)
0.65
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
C
SEATING
PLANE
SIDE VIEW
(0.200) 4X
2
1
3
Function
1
2
3
4
5
6
7
8
Drain
Drain
Gate
Source
Drain
Drain
Drain
Source
NOTES:
(0.15)
(0.50)
(0.30)
PIN #1 IDENT
Pin #
A. PACKAGE DOES NOT CONFORM TO
ANY JEDEC STANDARD.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(6X)
8
7
(0.50)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
E. DRAWING FILENAME: MKT-FDMA908Prev1.
6
5
4
0.65
1.30
BOTTOM VIEW
F. REFERENCE DRAWING NO : MKT-MLP06Prev1.
0.10
0.05
C A B
C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
工商网监
湘ICP备2023018690号
