FDMA910PZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA910PZ Single P-Channel PowerTrench® MOSFET -20 V, -9.4 A, 20 mΩ Features General Description „ Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A „ Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A „ Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm „ HBM ESD protection level > 2.8k V typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant Pin 1 D G D Bottom Drain Contact Drain Source D D D 1 6 D D 2 5 D G 3 4 S S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -9.4 -45 Power Dissipation TA = 25°C (Note 1a) 2.4 Power Dissipation TA = 25°C (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 52 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 145 °C/W Package Marking and Ordering Information Device Marking 910 Device FDMA910PZ ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C5 Package MicroFET 2X2 1 Reel Size 7” Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA910PZ Single P-Channel PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±1 μA -1.5 V -20 V -12 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.4 -0.5 3 mV/°C VGS = -4.5 V, ID = -9.4 A 16 20 VGS = -2.5 V, ID = -8.6 A 19 24 VGS = -1.8 V, ID = -7.2 A 24 34 VGS = -4.5 V, ID = -9.4 A, TJ = 125 °C 20 25 VDD = -5 V, ID = -9.4 A 52 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 2110 2805 pF 414 620 pF 388 580 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -9.4 A, VGS = -4.5 V, RGEN = 6 Ω VGS = -4.5 V, VDD = -10 V, ID = -9.4 A 9.4 19 ns 19 34 ns 135 216 ns 103 165 ns 21 29 nC 2.5 nC 6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -2 A (Note 2) -0.6 -1.2 V VGS = 0 V, IS = -9.4 A (Note 2) -0.8 -1.2 V IF = -9.4 A, di/dt = 100 A/μs 23 37 ns 6.3 13 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C5 2 www.fairchildsemi.com FDMA910PZ Single P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = -4.5 V VGS = -3.5 V VGS = -1.8 V VGS = -2.5 V 30 VGS = -1.5 V 15 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 45 2.0 VGS = -1.5 V VGS = -1.8 V 2 VGS = -2.5 V 1 VGS = -3.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 15 30 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 60 ID = -9.4 A VGS = -4.5 V rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 45 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 45 ID = -9.4 A 30 TJ = 125 oC 15 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature TJ = 25 oC 1.5 2.0 2.5 3.0 3.5 4.0 -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 Figure 4. On-Resistance vs Gate to Source Voltage 100 -IS, REVERSE DRAIN CURRENT (A) 45 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) VGS = -4.5 V VDS = -5 V 30 TJ = 150 oC 15 TJ = 25 oC TJ = -55 oC 0 0.5 1.0 1.5 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 2.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C5 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMA910PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = -9.4 A Ciss VDD = -8 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -10 V VDD = -12 V 1.5 1000 Coss Crss f = 1 MHz VGS = 0 V 0.0 0 5 10 15 20 100 0.1 25 1 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -1 100 -2 VDS = 0 V 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT (A) 10 -3 10 -4 10 -5 10 TJ = 125 oC -6 10 -7 10 TJ = 25 oC -8 10 100 μs 10 1 ms 1 THIS AREA IS LIMITED BY rDS(on) -9 10 0 3 6 9 12 0.01 0.01 15 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED RθJA = 145 oC/W TA = 25 oC 0.1 10 -10 10 ms -VGS, GATE TO SOURCE VOLTAGE (V) 0.1 1 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 1000 100 10 SINGLE PULSE o RθJA = 145 C/W o 1 0.5 -4 10 TA = 25 C -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C5 4 www.fairchildsemi.com FDMA910PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 145 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C5 5 www.fairchildsemi.com FDMA910PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMA910PZ Single P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-C06 ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C5 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C5 7 www.fairchildsemi.com FDMA910PZ Single P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® ® SM Global Power Resource PowerTrench BitSiC™ TinyBoost® Build it Now™ GreenBridge™ PowerXS™ TinyBuck® CorePLUS™ Green FPS™ Programmable Active Droop™ TinyCalc™ ® CorePOWER™ Green FPS™ e-Series™ QFET TinyLogic® CROSSVOLT™ QS™ Gmax™ TINYOPTO™ CTL™ Quiet Series™ GTO™ TinyPower™ Current Transfer Logic™ RapidConfigure™ IntelliMAX™ TinyPWM™ DEUXPEED® ISOPLANAR™ ™ TinyWire™ Marking Small Speakers Sound Louder Dual Cool™ TranSiC™ and Better™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® TriFault Detect™ MegaBuck™ SignalWise™ EfficentMax™ TRUECURRENT®* MICROCOUPLER™ SmartMax™ ESBC™ μSerDes™ MicroFET™ SMART START™ ® MicroPak™ Solutions for Your Success™ MicroPak2™ SPM® Fairchild® MillerDrive™ STEALTH™ UHC® Fairchild Semiconductor® MotionMax™ Ultra FRFET™ SuperFET® FACT Quiet Series™ mWSaver® SuperSOT™-3 UniFET™ FACT® OptoHiT™ SuperSOT™-6 VCX™ FAST® ® OPTOLOGIC SuperSOT™-8 VisualMax™ FastvCore™ ® ® OPTOPLANAR SupreMOS VoltagePlus™ FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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