FDMC007N30D

FDMC007N30D MOSFET, Dual N-Channel, POWERTRENCH) Q1: 30 V, 11.6 mW; Q2: 30 V, 6.4 mW General Description www.onsemi.com This device includes two specialized N−Channel MOSFETs in a dual Power33 (3mm × 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. G1 G2 D1 S2 D1 S2 D1 S2 Features Q1: N−Channel • Max rDS(on) = 11.6 m at VGS = 10 V, ID = 10 A • Max rDS(on) = 13.3 m at VGS = 4.5 V, ID = 9 A Q1: N−Channel • Max rDS(on) = 6.4 m at VGS = 10 V, ID = 16 A • Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 15 A • RoHS Compliant Dual N-Channel MOSFET Bottom Applications Pin 1 • Mobile Computing • Mobile Internet Devices • General Purpose Point of Load Q1 Q2 Unit VDS Drain to Source Voltage 30 30 V VGS Gate to Source Voltage (Note 4) ±12 ±12 V ID Parameter Drain Current: − Continuous, TC = 25°C (Note 6) − Continuous, TC = 100°C (Note 6) − Continuous, TA = 25°C (Note 1a) − Pulsed (Note 5) EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation for Single Operation: TA = 25°C TA = 25°C TJ, TSTG Operating and Storage Junction Temperature Range A 29 46 18 29 10 (Note 1a) 113 16 (Note 1b) 302 24 54 February, 2019 − Rev. 2 D1 S2 S2 V IN V IN VIN GND GND G LSGND S2 WDFN8 3x3 CASE 511DE MARKING DIAGRAM mJ 2.5 (Note 1b) 1.0 (Note 1d) −55 to +150 $Y &Z &2 &K FDMC7N30D = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 V IN G HS $Y&Z&2&K FDMC 7N30D W 1.9 (Note 1a) 0.7 (Note 1c) D1 G2 MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol G1 D1 D1 1 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FDMC007N30D/D FDMC007N30D PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Quantity FDMC7N30D FDMC007N30D WDFN−8 (Power 33) 3000/Tape&Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Q1 Q2 Unit 8.2 6.1 °C/W 65 (Note 1a) 50 (Note 1b) 180 (Note 1c) 125 (Note 1d) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Type Min 30 30 Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V ID = 250 A, VGS = 0 V Q1 Q2 BVDSS /TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25°C ID = 250 A, referenced to 25°C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Q1 Q2 1 1 A IGSS Gate to Source Leakage Current, Forward VGS = ±12 V, VDS = 0 V Q1 Q2 ±100 ±100 nA 3.0 3.0 V BVDSS V 15 16 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS = VDS, ID = 250 A Q1 Q2 VGS(th) /TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25°C ID = 250 A, referenced to 25°C Q1 Q2 −4 −4 rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 9 A VGS = 10 V, ID = 10 A, TJ = 125°C Q1 7.7 8.9 10.8 11.6 13.3 16.3 m rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 16 A, TJ = 125°C Q2 4.4 5.4 6.2 6.4 7.0 9.0 m Forward Transconductance VDD = 5 V, ID = 10 A VDD = 5 V, ID = 16 A Q1 Q2 46 70 VDS = 15 V, VGS = 0 V, f = 1 MHz Q1 Q2 792 1685 1110 2360 pF gFS 1.0 1.0 1.3 1.8 mV/°C S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Q1 Q2 230 467 325 655 pF Crss Reverse Transfer Capacitance Q1 Q2 20 36 30 50 pF Gate Resistance Q1 Q2 2.0 1.2 4.0 2.4  Rg www.onsemi.com 2 0.1 0.1 FDMC007N30D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Parameter Test Condition Type Min Typ Max Unit Q1 Q2 7 10 14 20 ns Q1 Q2 2 3 10 10 ns Q1 Q2 19 24 33 39 ns Q1 Q2 2 3 10 10 ns Q1 Q2 12 24 17 34 nC Q1 Q2 5.5 11 7.7 16 nC Q1 Q2 1.7 4.4 nC Q1 Q2 1.3 2.7 nC SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg(TOT) Turn-On Delay Time Rise Time Turn-Off Delay Time Q1 VDD = 15 V, ID = 10 A, VGS = 10 V, RGEN = 6  Q2 VDD = 15 V, ID = 16 A, VGS = 10 V, RGEN = 6  Fall Time Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VGS = 0 V to 10 V Q1 VDD = 15 V, VGS = 0 V to 4.5 V ID = 10 A Q2 VDD = 15 V, ID = 16 A DRAIN−SOURCE DIODE CHARACTERISTICS Source−Drain Diode Forward Voltage VGS = 0 V, IS = 10 A (Note 2) VGS = 0 V, IS = 1.5 A (Note 2) VGS = 0 V, IS = 16 A (Note 2) VGS = 0 V, IS = 2 A (Note 2) Q1 Q1 Q2 Q2 0.85 0.75 0.83 0.73 1.2 1.2 1.2 1.2 V trr Reverse Recovery Time Q1 IF = 10 A, di/dt = 100 A/s Q1 Q2 17 27 31 42 ns Qrr Reverse Recovery Charge Q2 IF = 16 A, di/dt = 100 A/s Q1 Q2 5 10 10 20 nC VSD NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RCA is determined by the user’s board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 50 °C/W when mounted on a1 in2 pad of 2 oz copper. SS SF DS DF G SS SF DS DF G c. 180 °C/W when mounted on a minimum pad of 2 oz copper. d. 125 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 uS, Duty cycle < 2.0%. 3. Q1: EAS of 24 mJ is based on starting TJ = 25°C, L = 3 mH, IAS = 4 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 13 A. Q2: EAS of 54 mJ is based on starting TJ = 25°C, L = 3 mH, IAS = 6 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 22 A. 4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 5. Pulsed Id please refer to Figure 11 and Figure. 24 SOA graph for more details. 6. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. www.onsemi.com 3 FDMC007N30D TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted) VGS = 10 V VGS = 4.5 V 30 VGS = 3.5 V VGS = 3 V VGS = 2.5 V 20 10 PULSE DURATION = 80  s DUTY CYCLE = 0.5% MAX 0 0.0 0.5 10 1.5 6.0 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 40 4.5 VGS = 3 V 3.0 VGS = 3.5 V 1.5 2.0 0 10 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 SOURCE ON−RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 40 ID = 10 A VGS = 10 V 40 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 30 ID = 10 A 20 TJ = 125 oC 10 TJ = 25 oC 0.7 −75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature Figure 4. On−Resistance vs. Gate to Source Voltage 40 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 30 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.4 30 VDS = 5 V 20 TJ = 150 oC TJ = 25 oC 10 TJ = −55oC 0 20 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.5 VGS = 10 V VGS = 4.5 V 0 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 PULSE DURATION = 80  s DUTY CYCLE = 0.5% MAX VGS = 2.5 V 0 1 2 3 10 VGS = 0 V 1 TJ = 150 oC 0.1 0.01 TJ = −55oC 0.001 0.0 4 TJ = 25 oC VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 FDMC007N30D TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (continued) (TJ = 25°C unless otherwise noted) 1000 ID = 10 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 15 V 4 VDD = 20 V 2 0 0 4 8 Coss 100 f = 1 MHz VGS = 0 V 10 0.1 12 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs. Drain to Source Voltage 35 30 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = 125 oC TJ = 100 oC 25 0.01 0.1 1 VGS = 10 V 20 VGS = 4.5 V 15 10 5 1 0.001 o RJC = 8.2 C/W 0 25 10 50 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) 10  s 10 100  s 1 1 ms o 0.01 0.01 10 ms 100 ms SINGLE PULSE TJ = MAX RATED RJA = 180 oC/W TA = 25 C 0.1 125 150 10000 THIS AREA IS LIMITED BY rDS(on) 0.1 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 300 100 75 TC, CASE TEMPERATURE ( 5C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss 1s CURVE BENT TO MEASURED DATA 1 10 10 s DC 100 SINGLE PULSE RJA = 180 oC/W 1000 TA = 25 oC 100 10 1 0.1 −5 10 VDS, DRAIN to SOURCE VOLTAGE (V) −4 10 −3 10 −2 10 −1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDMC007N30D TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (TJ = 25°C unless otherwise noted) 2 1 0.1 0.01 0.001 0.0001 10−5 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZJA (t) = r(t) × RJA RJA = 180°C/W Peak TJ = PDM × ZJA (t) + TA Duty cycle, D = t1/t2 SINGLE PULSE −4 10 −3 10 −2 10 −1 10 11 0 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve www.onsemi.com 6 100 1000 FDMC007N30D TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (TJ = 25°C unless otherwise noted) 70 4 ID, DRAIN CURRENT (A) 60 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V 50 VGS = 4.5 V 40 VGS = 4 V 30 VGS = 3.5 V VGS = 3 V 20 10 0 0.0 0.5 10 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3 V 3 VGS = 3.5 V 2 VGS = 4 V 1 VGS = 4.5 V 0 2.0 0 rDS(on) ,DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 SOURCE ON−RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 40 50 60 70 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 16 A 20 10 0 0.7 −75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) TJ = 125 oC TJ = 25 oC 2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Normalized On Resistance vs. Junction Temperature Figure 17. On−Resistance vs. Gate to Source Voltage 70 70 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80  s DUTY CYCLE = 0.5% MAX 60 ID, DRAIN CURRENT (A) 30 30 1.4 VDS = 5 V 50 40 30 TJ = 150 20 oC TJ = 25 oC TJ = −55oC 10 0 20 Figure 15. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = 16 A VGS = 10 V 1.5 10 VGS = 10 V ID, DRAIN CURRENT (A) Figure 14. On Region Characteristics 1.6 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1 2 3 VGS = 0 V 10 1 TJ = 150 oC 0.1 TJ = −55oC 0.01 0.001 0.0 4 TJ = 25 oC VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 7 FDMC007N30D TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (continued) (TJ = 25°C unless otherwise noted) 10000 ID = 16 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 10 V 4 VDD = 20 V 2 0 0 6 12 18 24 1000 Coss 100 Crss f = 1 MHz VGS = 0 V 10 0.1 30 1 Figure 20. Gate Charge Characteristics 50 ID, DRAIN CURRENT (A) IAS , AVALANCHE CURRENT (A) 10 TJ = 25 oC TJ = 125 oC 1 0.001 0.01 0.1 TJ = 100 oC 1 10 40 VGS = 10 V 30 VGS = 4.5 V 20 o RJC = 6.1 C/W 10 0 25 100 50 tAV , TIME IN AVALANCHE (ms) 75 100 125 150 TC, CASE TEMPERATURE ( 5C) Figure 22. Unclamped Inductive Switching Capability Figure 23. Maximum Continuous Drain Current vs. Case Temperature 10000 THIS AREA IS LIMITED BY rDS(on) 10  s 100  s 10 1 ms 1 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W o 0.01 0.01 P(PK), PEAK TRANSIENT POWER (W) 500 ID, DRAIN CURRENT (A) 30 Figure 21. Capacitance vs. Drain to Source Voltage 30 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TA = 25 C 0.1 CURVE BENT TO MEASURED DATA 1 10 10 ms 100 ms 1s 10 s DC 100 SINGLE PULSE RJA = 125 oC/W 1000 o TA = 25 C 100 10 1 0.1 −5 10 −4 10 −3 10 −2 10 −1 10 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 24. Forward Bias Safe Operating Area Figure 25. Single Pulse Maximum Power Dissipation www.onsemi.com 8 FDMC007N30D TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (TJ = 25°C unless otherwise noted) 2 1 0.1 0.01 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZJA (t) = r(t) × RJA RJA = 125°C/W Peak TJ = PDM × ZJA (t) + TA Duty cycle, D = t1/t2 0.001 0.0001 −5 10 SINGLE PULSE −4 10 −3 10 −2 10 −1 10 11 0 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 26. Junction−to−Ambient Transient Thermal Response Curve POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3x3, 0.65P CASE 511DE ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13621G WDFN8 3X3, 0.65P DATE 31 AUG 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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