FDMC012N03

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC012N03 N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ Features General Description „ Max rDS(on) = 1.23 mΩ at VGS = 10 V, ID = 35 A „ High performance technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Termination is Lead-free Application „ RoHS Compliant „ DC-DC Conversion „ Max rDS(on) = 1.46 mΩ at VGS = 4.5 V, ID = 32 A Pin 1 Pin 1 S D D D Top S S S D S D S D G D G D Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TC = 25 °C -Continuous -Continuous TJ, TSTG ±12 V 185 TC = 100 °C (Note 5) 117 TA = 25 °C (Note 1a) 35 -Pulsed PD Units V (Note 5) Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C (Note 4) 688 (Note 3) 337.5 64 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 1.95 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC012N03 Device FDMC012N03 ©2015 Fairchild Semiconductor Corporation FDMC012N03 Rev. 1.0 Package Power33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC012N03 N-Channel Power Trench® MOSFET July 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±100 nA 2.0 V 30 V 21 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -4.5 VGS = 10 V, ID = 35 A 0.96 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 32 A 1.14 1.46 VGS = 10 V, ID = 35 A, TJ = 125 °C 1.36 1.77 VDD = 5 V, ID = 35A 220 VDS = 15 V, VGS = 0 V, f = 1 MHz 5845 8183 pF 1440 2016 pF gFS Forward Transconductance 0.8 1.3 mV/°C 1.23 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance 0.1 94 132 pF 0.5 1 Ω ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge Qgs Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 35 A Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 35 A, VGS = 10 V, RGEN = 6 Ω 16 29 5.5 11 ns 43 69 ns 4.5 10 ns 78 110 nC 35 50 nC 11.5 nC 6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 35 A VGS = 0 V, IS = 2 A (Note 2) (Note 2) IF = 35 A, di/dt = 100 A/μs 0.8 1.3 V 0.7 1.2 V 45 80 ns 27.5 45 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 130 °C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 337.5 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 15 A, VDD = 30 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 47 A. 4. Pulsed Id please refer to Fig.11 SOA curve for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. ©2015 Fairchild Semiconductor Corporation FDMC012N03 Rev. 1.0 2 www.fairchildsemi.com FDMC012N03 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 10 V VGS = 4.5 V 120 VGS = 3.5 V 90 VGS = 3 V 60 VGS = 2.5 V 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 150 VGS = 2.5 V 4 3 VGS = 3 V 2 VGS = 3.5 V 1 0 1.0 PULSE DURATION = 80 μs V = 4.5 V GS DUTY CYCLE = 0.5% MAX 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 8 ID = 35 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 6 4 TJ = 125 oC 2 0 100 125 150 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 35 A TJ = 25 oC 1 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = 5 V 90 TJ = 150 oC 60 TJ = 25 oC 30 TJ = -55 oC 0 1 2 3 3 4 5 6 7 8 9 150 100 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2015 Fairchild Semiconductor Corporation FDMC012N03 Rev. 1.0 10 Figure 4. On-Resistance vs Gate to Source Voltage 150 120 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 90 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 0 60 VGS = 10 V 3 1.2 www.fairchildsemi.com FDMC012N03 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 35 A Ciss 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 15 V 4 VDD = 20 V 2 0 0 16 32 48 64 1000 Coss 100 10 0.1 80 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 200 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 150 oC 160 VGS = 10 V 120 VGS = 4.5 V 80 40 o RθJC = 1.95 C/W 1 0.001 0.01 0.1 1 10 100 0 25 1000 50 75 100 125 150 o tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 100 P(PK), PEAK TRANSIENT POWER (W) 1000 ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 10 μs SINGLE PULSE RθJC = 1.95 oC/W TC = 25 oC 1000 10 1 1 ms 10 ms 100 ms/DC SINGLE PULSE TJ = MAX RATED RθJC = 1.95 oC/W TC = 25 oC 0.1 0.1 100 μs THIS AREA IS LIMITED BY rDS(on) CURVE BENT TO MEASURED DATA 1 10 100 200 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 100 1000 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2015 Fairchild Semiconductor Corporation FDMC012N03 Rev. 1.0 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC012N03 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER PDM D = 0.5 0.2 0.1 0.05 0.02 0.01 t1 t2 NOTES: ZθJC(t) = r(t) x RθJC RθJC = 1.95 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2015 Fairchild Semiconductor Corporation FDMC012N03 Rev. 1.0 5 www.fairchildsemi.com FDMC012N03 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3.40 3.20 PKG CL 8 2.37 MIN A (0.45) 8 B 5 PKG CL 3.40 3.20 PKG CL SYM CL 5 2.15 MIN (0.40) (0.65) 0.70 MIN PIN 1 INDICATOR 1 4 1 4 0.65 1.95 SEE DETAIL A 0.42 MIN (8X) LAND PATTERN RECOMMENDATION 1.95 0.10 C A B 0.37 (8X) 0.27 0.65 1 4 0.50 0.30 PKG CL 2.05 1.85 5 8 (0.34) (0.52 TYP) (0.33) TYP (2.27) 0.10 C 0.80 0.70 0.08 C 0.25 0.15 0.05 0.00 C SEATING PLANE SCALE: 2X NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) DRAWING FILE NAME: PQFN08HREV1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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