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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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200V, 9.5A, 200mΩ
Features
General Description
Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s
advanced
Power
Trench
process. It has been optimized for power management
applications.
Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
Low Profile - 1mm Max in a Power 33
RoHS Compliant
Application
DC - DC Conversion
Bottom
Top
8
1
7
6
D D D D
5
G S S S
2 3 4
D
5
4 G
D
6
3 S
D
7
2 S
D
8
1 S
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
ID
(Note 1a)
V
2.2
(Note 3)
6
42
(Note 1a)
2.1
TC = 25°C
Power Dissipation
TJ, TSTG
±20
A
15
Single Pulse Avalanche Energy
Power Dissipation
PD
Units
V
9.5
-Pulsed
EAS
Ratings
200
TA = 25°C
Operating and Storage Junction Temperature Range
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
3
(Note 1a)
60
°C/W
Package Marking and Ordering Information
Device Marking
FDMC2610
Device
FDMC2610
©2012 Fairchild Semiconductor Corporation
FDMC2610 Rev.1.6
Package
MLP 3.3x3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC2610 N-Channel UltraFET Trench® MOSFET
July 2016
FDMC2610
N-Channel UltraFET Trench® MOSFET
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
200
ID = 250μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
V
mV/°C
199
VDS = 160V,
VGS = 0V
1
TJ = 125°C
100
VGS = ±20V, VDS = 0V
μA
±100
nA
4
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
-9.9
VGS = 10V, ID = 2.2A
175
200
rDS(on)
Drain to Source On Resistance
VGS = 6V, ID = 1.5A
188
215
VGS = 10V, ID = 2.2A , TJ = 125°C
347
397
gFS
Forward Transconductance
VDS = 5V, ID = 2.2A
2
3.2
mV/°C
mΩ
S
7
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 100V, VGS = 0V,
f = 1MHz
720
960
pF
41
55
pF
12
20
pF
Ω
f = 1MHz
0.7
VDD = 100V, ID = 2.2A
VGS = 10V, RGEN = 24Ω
17
31
ns
13
24
ns
29
47
ns
16
29
ns
12.3
18
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VGS = 0V to 10V VDD = 100V
ID = 2.2A
3
nC
3.6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.2A
(Note 2)
IF = 2.2A, di/dt = 100A/μs
0.8
1.2
V
69
104
ns
114
171
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 2 A, V DD = 200 V, VGS = 10 V.
FDMC2610 Rev.1.6
2
www.fairchildsemi.com
FDMC2610 N-Channel UltraFET Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 7V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
15
VGS = 10V
10
VGS = 6V
5
VGS = 5V
VGS = 4.5V
0
0
1
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
VGS = 5V
1.4
1.0
0.8
3
600
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
0
2.0
1.8
1.6
1.4
1.2
1.0
ID =2.2A
VGS = 10V
0.8
0.6
0.4
-75
-50
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
9
TJ = 150oC
6
3
2
-55oC
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
6
Figure 5. Transfer Characteristics
FDMC2610 Rev.1.6
15
ID = 1.4A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TA = 150oC
400
300
TA = 25oC
200
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
12
TJ =
12
500
100
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
TJ = 25oC
6
9
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 10V
3
2.4
0
VGS = 7V
VGS = 6V
1.2
Figure 1. On-Region Characteristics
2.2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
20
10
VGS = 0V
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC2610 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted.
FDMC2610 N-Channel UltraFET Trench® MOSFET
1000
10
Ciss
VDD =50V
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
Typical Characteristics TJ = 25°C unless otherwise noted.
VDD = 100V
6
VDD = 150V
4
2
0
0
3
6
9
Qg, GATE CHARGE(nC)
12
100
Coss
10
0.1
15
f = 1MHz
VGS = 0V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
10
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
100
Figure 8. Capacitance vs Drain
to Source Voltage
3
2
TJ = 25 oC
8
VGS = 10V
6
VGS = 6V
4
2
o
RθJC = 3 C/W
1
0.01
0.1
0
1
25
50
75
100
125
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
P(PK), PEAK TRANSIENT POWER (W)
10
rDS(on)LIMITED
100us
1
1ms
10ms
0.1
100ms
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA=135OC
1s
DC
TA = 25OC
0.001
0.1
1
10
100
700
VDS, DRAIN to SOURCE VOLTAGE (V)
500
TA = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
100
CURRENT AS FOLLOWS:
I = I25
150 – T
A
-----------------------125
10
SINGLE PULSE
1
R
0.5
-4
10
O
=135 C
θJA
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe
Operating Area
FDMC2610 Rev.1.6
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
40
ID, DRAIN CURRENT (A)
Crss
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
1
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
2
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
0.003
-3
10
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RθJA x r(t) + TA
SINGLE PULSE
-2
10
-1
0
1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
2
10
3
10
Figure 13. Transient Thermal Response Curve
FDMC2610 Rev.1.6
5
www.fairchildsemi.com
FDMC2610 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted.
3.30
0.05 C
B
A
2X
8
(3.40)
2.37
5
0.45(4X)
2.15
(1.70)
3.30
(0.40)
KEEP OUT
AREA
(0.65)
0.70(4X)
PIN#1 IDENT
0.05 C
TOP VIEW
0.65
2X
1
4
0.42(8X)
1.95
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
B. DIMENSIONS ARE IN MILLIMETERS.
2.27+0.05
PIN #1 IDENT
(0.50)4X
(0.79)
1
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
4
E. DRAWING FILENAME: MKT-MLP08Srev3.
(0.35)
(1.15)
R0.15
8
0.65
5
1.95
BOTTOM VIEW
0.10
0.05
C A B
C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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