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FDMC2674
N-Channel UltraFET Trench MOSFET
220V, 7.0A, 366mΩ
Features
General Description
Max rDS(on) = 366mΩ at VGS = 10V, ID = 1.0A
UltraFET device combines characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Typ Qg = 12.7nC at VGS = 10V
Low Miller charge
Low Qrr Body Diode
Application
Optimized efficiency at high frequencies
UIS Capability ( Single Pulse and Repetitive Pulse)
DC/DC converters and Off-Line UPS
RoHS Compliant
Distributed Power Architectures
Bottom
Top
8
1
7
6
D D D D
5
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
G S S S
2 3 4
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
TC= 25°C
-Continuous
TA = 25°C
ID
TJ, TSTG
±20
V
(Note 1b)
1.0
A
13.8
Single Pulse Avalanche Energy
PD
Units
V
7.0
-Pulsed
EAS
Ratings
220
(Note 3)
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
11
42
(Note 1a)
Operating and Storage Junction Temperature Range
2.1
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
3.0
(Note 1a)
60
°C/W
Package Marking and Ordering Information
Device Marking
FDMC2674
Device
FDMC2674
©2012 Fairchild Semiconductor Corporation
FDMC2674 Rev.F4
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC2674 N-Channel UltraFET Trench MOSFET
September 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
220
V
ID = 250μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 176V, VGS = 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
4
V
248
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
2
3.4
-10.2
mV/°C
VGS = 10V, ID = 1.0A
305
366
VGS = 10V, ID = 1.0A , TJ = 150°C
678
814
880
1180
70
95
pF
11
20
pF
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 100V, VGS = 0V,
f = 1MHz
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 100V, ID = 1.0A
VGS = 10V, RGEN = 2.4Ω
VGS = 0V to 10V VDD = 15V
ID = 1.0A
9
18
ns
13
23
ns
15
27
ns
21
34
ns
12.7
18
nC
3.8
nC
2.9
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.2A
(Note 2)
IF = 1.0A, di/dt = 100A/μs
0.8
1.5
V
60
ns
109
nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper.
a. 60°C/W when mounted on a
1 in2 pad of 2 oz copper
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting TJ = 25°C; N-ch: L = 1mH, IAS = 4.7A, VDD = 25V, VGS = 10V.
FDMC2674 Rev.F4
2
www.fairchildsemi.com
FDMC2674 N-Channel UltraFET Trench MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
2.5
VGS = 10V
2.0
VGS = 5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
3.0
VGS = 7V
1.5
VGS = 4.5V
1.0
0.5
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.0
0.0
0.5
1.0
1.5
1.6
VGS = 4.5V
1.4
VGS = 5.0V
1.2
VGS = 7V
1.0
VGS = 10V
0.8
0.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.5
3.0
0.8
2.4
ID = 1A
VGS = 10V
2.0
1.6
1.2
0.8
0.4
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
TJ = 150oC
TJ = 25oC
TJ = -55oC
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
6
Figure 5. Transfer Characteristics
FDMC2674 Rev.F4
0.4
0.3
TJ = 25oC
8
12
16
VGS, GATE TO SOURCE VOLTAGE (V)
20
Figure 4. On-Resistance vs Gate to
Source Voltage
VDD = 5V
1
TJ = 150oC
0.5
4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.6
150
4
3
ID = 1A
0.7
0.2
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
1.0
1.5
2.0
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
RDS(on), DRAIN TO
SOURCE ON-RESISTANCE (Ω)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On-Region Characteristics
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
20
10
VGS = 0V
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
1E-4
0.0
0.3
0.6
0.9
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC2674 N-Channel UltraFET Trench MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2000
VGS, GATE TO SOURCE VOLTAGE(V)
10
ID = 1A
1000
CAPACITANCE (pF)
8
VDD = 100V
6
4
2
Ciss
100
Coss
f = 1MHz
VGS = 0V
10
0
3
6
9
Qg, GATE CHARGE(nC)
12
15
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
2
30
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
Crss
5
0.1
0
1
TJ = 25oC
TJ =
125oC
rDS(on) LIMITED
10
100us
1
1ms
10ms
0.1
100ms
SINGLE PULSE
TJ = MAX RATED
1s
10s
RθJA = 135oC/W
0.01
TA = 25oC
0.1
0.01
0.1
1
10
1E-3
0.1
100
tAV, TIME IN AVALANCHE(ms)
DC
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
P(PK), PEAK TRANSIENT POWER (W)
500
TA = 25oC
100
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
I = I25
150 – T
A
-----------------------125
SINGLE PULSE
o
1
0.5
-4
10
RθJA = 135 C/W
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
0
10
1
10
2
10
3
10
Figure 11. Single Pulse Maximum Power Dissipation
FDMC2674 Rev.F4
4
www.fairchildsemi.com
FDMC2674 N-Channel UltraFET Trench MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 135 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
SINGLE PULSE
1E-3
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
FDMC2674 Rev.F4
5
www.fairchildsemi.com
FDMC2674 N-Channel UltraFET Trench MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3.30
0.05 C
B
A
2X
8
(3.40)
2.37
5
0.45(4X)
2.15
(1.70)
3.30
(0.40)
KEEP OUT
AREA
(0.65)
0.70(4X)
PIN#1 IDENT
0.05 C
TOP VIEW
0.65
2X
1
4
0.42(8X)
1.95
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
B. DIMENSIONS ARE IN MILLIMETERS.
2.27+0.05
PIN #1 IDENT
(0.50)4X
(0.79)
1
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
4
E. DRAWING FILENAME: MKT-MLP08Srev3.
(0.35)
(1.15)
R0.15
8
0.65
5
1.95
BOTTOM VIEW
0.10
0.05
C A B
C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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