N-Channel Dual CoolTM 33 PowerTrench® MOSFET
30 V, 40 A, 6.25 mΩ
Features
Dual
CoolTM
General Description
Top Side Cooling PQFN package
This N-Channel MOSFET is produced using Fairchild
process.
Semiconductor’s
advanced
PowerTrench®
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A
High performance technology for extremely low rDS(on)
RoHS Compliant
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation
Pin 1
S
S
S
G
D
Top
TM
Dual Cool
33
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
TC = 25 °C
TC = 25 °C
-Continuous (Silicon limited)
ID
TA = 25 °C
-Continuous
-Pulsed
EAS
dv/dt
±20
V
40
70
(Note 1a)
17
60
Peak Diode Recovery dv/dt
(Note 4)
1.6
(Note 1a)
3.0
TC = 25 °C
TA = 25 °C
A
100
(Note 3)
Power Dissipation
TJ, TSTG
Units
V
Single Pulse Avalanche Energy
Power Dissipation
PD
Ratings
30
50
Operating and Storage Junction Temperature Range
-55 to +150
mJ
V/ns
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Top Source)
7.9
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
2.5
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
42
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
105
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
17
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
12
°C/W
Package Marking and Ordering Information
Device Marking
3020
Device
FDMC3020DC
©2012 Fairchild Semiconductor Corporation
FDMC3020DC Rev.1.5
Package
Dual CoolTM 33
1
Reel Size
13"
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC3020DC N-Channel Dual Cool TM 33 PowerTrench® MOSFET
July 2015
FDMC3020DC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
IGSS
Gate to Source Leakage Current
IDSS
Zero Gate Voltage Drain Current
ID = 250 μA, VGS = 0 V
30
ID = 250 μA, referenced to 25 °C
V
17
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
mV/°C
1
μA
±100
nA
3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 μA
1.0
1.9
ID = 250 μA, referenced to 25 °C
-6
VGS = 10 V, ID = 12 A
VGS = 10 V, ID = 12 A, TJ = 125 °C
mV/°C
5.0
6.25
VGS = 4.5 V, ID = 10 A
7.2
9.0
7.5
9.1
VDS = 5 V, ID = 12 A
44
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
0.1
1038
1385
pF
513
685
pF
87
135
2.0
pF
0.9
9
18
ns
3
10
ns
19
35
ns
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
tf
Fall Time
Qg
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
td(off)
Turn-Off Delay Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
VDD = 15 V, ID = 12 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 12 A
2
10
ns
15.5
23
nC
7.1
10.6
nC
3
nC
2.5
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2012 Fairchild Semiconductor Corporation
FDMC3020DC Rev.1.5
VGS = 0 V, IS = 12 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
IF = 12 A, di/dt = 100 A/μs
2
0.82
1.3
0.73
1.2
V
25
45
ns
9
18
nC
www.fairchildsemi.com
FDMC3020DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
7.9
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
2.5
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
42
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
105
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
29
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
40
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
30
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
79
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
17
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
12
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
16
°C/W
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
b. 105 °C/W when mounted on
a minimum pad of 2 oz copper
a. 42 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V.
4. ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC.
©2012 Fairchild Semiconductor Corporation
FDMC3020DC Rev.1.5
3
www.fairchildsemi.com
FDMC3020DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET
Thermal Characteristics
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
VGS = 10V
ID, DRAIN CURRENT (A)
40
VGS = 4.5V
VGS = 3.5V
30
VGS = 4V
20
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
10
VGS = 3V
0
0
1
2
3
4
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
5
VGS = 3V
4
VGS = 3.5V
3
VGS = 4V
1
VGS = 10V
0
5
0
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
50
50
ID = 12A
VGS = 10V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
40
ID = 12A
30
20
TJ = 125oC
10
TJ = 25oC
0
150
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
IS, REVERSE DRAIN CURRENT (A)
50
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
40
ID, DRAIN CURRENT (A)
30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
0.6
-50
20
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
1.6
VGS = 4.5V
2
VDS = 5V
30
20
TJ = 150oC
TJ = 25oC
10
TJ = -55oC
0
1
2
3
4
VGS = 0V
10
TJ = 150oC
1
TJ = 25oC
0.1
TJ = -55oC
0.01
0.001
0.0
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDMC3020DC Rev.1.5
4
1.2
www.fairchildsemi.com
FDMC3020DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
ID = 12A
Ciss
8
1000
VDD = 10V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 15V
6
VDD = 20V
4
Coss
100
f = 1MHz
VGS = 0V
2
0
0
3
6
9
12
15
30
0.1
18
1
Figure 7. Gate Charge Characteristics
80
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
o
10
TJ = 25oC
TJ = 125oC
1
0.01
0.1
1
10
60
VGS = 4.5 V
40
Limited by Package
20
0
25
100
RθJC = 2.5 C/W
VGS = 10 V
50
75
100
Figure 9. Unclamped Inductive
Switching Capability
2000
1000
P(PK), PEAK TRANSIENT POWER (W)
100 us
1ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
0.01
0.001
0.01
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
DC
RθJA = 105 oC/W
TA = 25 oC
0.1
1
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
SINGLE PULSE
o
RθJA = 105 C/W
o
TA = 25 C
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMC3020DC Rev.1.5
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
300
100
10
125
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
ID, DRAIN CURRENT (A)
30
Figure 8. Capacitance vs Drain
to Source Voltage
30
0.1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
1
Crss
Figure 12. Single Pulse Maximum
Power Dissipation
5
www.fairchildsemi.com
FDMC3020DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 105 C/W
0.001
0.0005
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMC3020DC Rev.1.5
6
www.fairchildsemi.com
FDMC3020DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3.30
3.40
2.37 MIN
A
PKG
CL
B
8
5
8
SYM
CL
KEEP
OUT
AREA
5
(0.45)
2.15 MIN
PKG
CL
3.30
PKG
CL
(0.40)
0.70 MIN
(0.65)
1
4
1
SEE DETAIL 'A'
4
0.65
0.42 MIN
1.95
LAND PATTERN
RECOMMENDATION
0.10 C A B
1.95
0.65
0.32±0.05
1
4
0.40±0.10
(0.20)
PKG
CL
3.30±0.10
2.00±0.10
(0.39)
8
0.52
5
(2.27)
3.30±0.10
0.10 C
1.00±0.05
0.08 C
0.05
0.00
0.20±0.025
SCALE: 2X
C
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. BA,
DATED OCTOBER 2002.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) DRAWING FILE NAME: PQFN08CREV3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
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