FDMC4435BZ

P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ General Description Features „ High performance trench technology for extremely low rDS(on) This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ High power and current handling capability Applications „ HBM ESD protection level >7 kV typical (Note 4) „ High side in DC - DC Buck Converters „ 100% UIL Tested „ Notebook battery power management „ Termination is Lead-free and RoHS Compliant „ Load switch in Notebook „ Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A „ Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A „ Extended VGSS range (-25 V) for battery applications Bottom Top Pin 1 S S S D 5 4 G D 6 3 S D 7 2 S D 8 1 S G D D D D FDMC4435BZ P-Channel Power Trench® MOSFET FDMC4435BZ MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±25 V (Note 1a) -8.5 A -50 Single Pulse Avalanche Energy PD Units V -18 -Pulsed EAS Ratings -30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 32 31 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 4 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC4435BZ Device FDMC4435BZ ©2010 Semiconductor Components Industries, LLC. October-2017, Rev.3 Package MLP 3.3X3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC4435BZ/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current -30 V 21 VDS = -24 V, VGS = 0 V, mV/°C -1 TJ = 125 °C -100 VGS = ±25 V, VDS = 0 V μA ±10 μA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C -5 VGS = -10 V, ID = -8.5 A 14 20 VGS = -4.5 V, ID = -6.3 A 21 37 VGS = -10 V, ID = -8.5 A, TJ = 125 °C 20 29 VDD = -5 V, ID = -8.5 A 25 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -1.0 -1.8 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15 V, VGS = 0 V, f = 1 MHz f = 1 MHz 1535 2040 pF 310 410 pF 280 420 pF Ω 4 Switching Characteristics td(on) Turn-On Delay Time 10 20 tr Rise Time 18 ns td(off) Turn-Off Delay Time VDD = -15 V, ID = -8.5 A, VGS = -10 V, RGEN = 6 Ω 9 35 56 ns tf Fall Time 19 34 ns Qg Total Gate Charge VGS = 0 V to -10 V 38 53 nC Qg Total Gate Charge 28 Gate to Source Charge VGS = 0 V to -4.5 V VDD = -15 V, ID = -8.5 A 20 Qgs 4.3 nC Qgd Gate to Drain “Miller” Charge 11 nC ns nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -8.5A (Note 2) 0.86 1.5 VGS = 0 V, IS = -1.9 A (Note 2) 0.74 1.2 26 40 ns 12 20 nC IF = -8.5 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25oC; P-ch: L = 1mH, IAS = -8A, VDD = -27V, VGS = -10V. 4. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDMC4435BZ P-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4.0 -ID, DRAIN CURRENT (A) VGS = -4.5V 40 VGS = -5V VGS = -10V 30 VGS = - 4V 20 VGS = -3.5V 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 3.5 VGS = -3.5V 3.0 VGS = -4V 2.5 VGS = -4.5V 2.0 1.5 VGS = -5V 1.0 VGS = -10V 0.5 4 0 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.0 ID = -8.5A 40 30 TJ = 125oC 20 TJ = 25oC 2 VDS = -5V 30 20 TJ = 25oC 10 TJ = -55oC 2 3 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX TJ = 150oC 4 -VGS, GATE TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 50 0 1 50 10 -50 Figure 3. Normalized On- Resistance vs Junction Temperature 40 40 60 ID = -8.5A VGS = -10V 1.2 0.6 -75 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 1.4 20 -ID, DRAIN CURRENT(A) 5 50 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.6 FDMC4435BZ P-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 10000 ID = -8.5A 8 Ciss CAPACITANCE (pF) VDD = -10V 6 VDD = -15V 4 VDD = -20V 2 1000 Coss Crss 100 f = 1MHz VGS = 0V 0 0 10 20 30 10 0.1 40 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics 30 40 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) 10 Figure 8. Capacitance vs Drain to Source Voltage 20 10 TJ = 25oC TJ = 125oC VGS = -10V 30 VGS = -4.5V 20 10 Limited by Package o RθJC = 4 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 75 100 125 150 o tAV, TIME IN AVALANCHE(ms) TC, Ambient TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature -4 100 10 10 100us 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 100ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10s o RθJA = 125 C/W DC TA = 25oC 0.01 0.01 -Ig, GATE LEAKAGE CURRENT(A) -ID, DRAIN CURRENT (A) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) VDS = 0V -5 10 TJ = 125oC -6 10 -7 10 TJ = 25oC -8 0.1 1 10 100 10 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 10 15 20 25 -VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Forward Bias Safe Operating Area Figure 12. Igss vs Vgss www.onsemi.com 4 30 FDMC4435BZ P-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 100 VGS = -10V 10 SINGLE PULSE o RθJA = 125 C/W o TA = 25 C 1 0.5 -3 10 -2 -1 10 10 1 10 100 1000 t, PULSE WIDTH (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 13. Single Pulse Maximum Power Dissipation 2 1 0.1 0.01 -3 10 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZθJA(t) = r(t) x RθJA SINGLE PULSE -2 10 -1 10 RθJA = 125 °C/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDMC4435BZ P-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC4435BZ P-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout www.onsemi.com 6 FDMC4435BZ P-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. 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