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P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.0 mΩ
Features
General Description
Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A
using
ON
This P-Channel MOSFET is produced
Semiconductor’s advanced Power Trench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A
Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A
Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A
High performance trench technology for extremely low rDS(on)
Applications
High power and current handling capability in a widely used
surface mount package
Battery Management
Load Switch
100% UIL Tested
Termination is Lead-free and RoHS Compliant
HBM ESD capability level >2 KV typical (Note 4)
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
(Note 1a)
TJ, TSTG
±8
V
-12
A
-50
Single Pulse Avalanche Energy
PD
Units
V
-18
-Pulsed
EAS
Ratings
-20
37
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
mJ
41
(Note 1a)
Operating and Storage Junction Temperature Range
W
2.3
-55 to +150
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
3
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC510P
Device
FDMC510P
©2010 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
Publication Order Number:
FDMC510P/D
FDMC510P P-Channel PowerTrench® MOSFET
FDMC510P
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±100
nA
-1.0
V
-20
V
-12
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
-0.4
-0.5
3
mV/°C
VGS = -4.5 V, ID = -12 A
6.4
8.0
VGS = -2.5 V, ID = -10 A
7.6
9.8
VGS = -1.8 V, ID = -9.3 A
9.2
13
VGS = -1.5 V, ID = -8.3 A
11
17
VGS = -4.5 V, ID = -12 A, TJ = 125 °C
8.5
12
VDS = -5 V, ID = -12 A
75
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
5910
7860
pF
840
1120
pF
738
1110
pF
15
27
ns
34
55
ns
338
540
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
170
272
ns
Qg(TOT)
Total Gate Charge
VGS = 0 V to -4.5 V
83
116
nC
Qg(TOT)
Total Gate Charge
70
Gate to Source Charge
VGS = 0 V to -2.5 V VDD = -10 V,
ID = -12 A
50
Qgs
6.3
nC
Qgd
Gate to Drain “Miller” Charge
20.4
nC
VDD = -10 V, ID = -12 A,
VGS = -4.5 V, RGEN = 6 Ω
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -12 A
(Note 2)
-0.70
-1.3
VGS = 0 V, IS = -2 A
(Note 2)
-0.53
-1.2
IF = -12 A, di/dt = 100 A/μs
V
35
57
ns
20
32
nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined
by the user’s board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting TJ = 25oC; P-Ch: L = 3 mH, IAS = -5 A, VDD = -20 V, VGS = -4.5 V.
4: No gate overvoltage rating is implied.
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2
FDMC510P P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
50
5
40
VGS = -4.5 V
VGS = -2.5 V
30
VGS = -1.8 V
20
VGS = -1.2 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
0
0.0
0.5
1.0
1.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = - 1.5 V
4
VGS = -1.2 V
3
VGS = -1.5 V
2
1
0
2.0
0
10
20
30
40
50
-ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
25
ID = -12 A
VGS = -4.5 V
1.4
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
SOURCE ON-RESISTANCE (mΩ)
1.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -4.5 V
VGS = -2.5 V
Figure 1. On Region Characteristics
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
20
ID = -12 A
15
TJ = 125 oC
10
TJ = 25 oC
5
0
1.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate to
Source Voltage
50
-IS, REVERSE DRAIN CURRENT (A)
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
VGS = -1.8 V
40
VDS = -5 V
30
TJ =
150 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
0.0
0.5
1.0
1.5
2.0
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.0
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
1.2
FDMC510P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
20000
ID = -12 A
10000
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
3.0
VDD = -12 V
VDD = -8 V
VDD = -10 V
1.5
Ciss
Coss
1000
20
40
60
80
100
1
Figure 7. Gate Charge Characteristics
20
Figure 8. Capacitance vs. Drain
to Source Voltage
60
-ID, DRAIN CURRENT (A)
20
-IAS, AVALANCHE CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
50
VGS = -4.5 V
40
VGS = -2.5 V
30
20
10
o
Limited by Package
1
0.1
1
10
100
0
25
1000
50
125
150
10
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 125 oC/W
DC
TA = 25 oC
0.1
1
10
80
P(PK), PEAK TRANSIENT POWER (W)
1000
100 us
0.01
0.01
100
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
0.1
75
o
Figure 9. Unclamped Inductive
Switching Capability
1
RθJC = 3 C/W
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
-ID, DRAIN CURRENT (A)
Crss
400
0.1
0.0
0
f = 1 MHz
VGS = 0 V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
t, PULSE WIDTH (sec)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
1000
FDMC510P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
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5
100
1000
FDMC510P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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