FDMC5614P

DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) Pin 1 SS SG -60 V, -13.5 A, 100 mW DD DD FDMC5614P, FDMC5614P-L701 WDFN8 3.3x3.3, 0.65P CASE 511DQ General Description This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V − 20 V). FDMC5614P, FDMC5614P−L701 MARKING DIAGRAM Features • • • • • • • Bottom Top Max rDS(on) = 100 mW at VGS = −10 V, ID = −5.7 A Max rDS(on) = 135 mW at VGS = −4.5 V, ID = −4.4 A Low Gate Charge Fast Switching Speed High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability These Devices are Pb−Free and are RoHS Compliant Applications $Y&Z&2&K FDMC 5614P $Y &Z &2 &K FDMC 5614P = Logo = Assembly Location = Date Code (Year and Week) = Lot Run Traceability Code = Specific Device Code = Specific Device Code • Power Management • Load Switch • Battery Protection PIN ASSIGNMENT D 5 4 G D 6 3 S D 7 2 S D 8 1 S P−Channel MOSFET ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 January, 2022 − Rev. 4 1 Publication Order Number: FDMC5614P/D FDMC5614P, FDMC5614P−L701 MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Unit VDS Drain to Source Voltage Parameter −60 V VGS Gate to Source Voltage ±20 V A Drain Current ID Continuous (Package Limited) TC = 25°C −13.5 Continuous (Silicon Limited) TC = 25°C −14 Continuous (Note 1a) TA = 25°C −5.7 Pulsed PD TJ, TSTG −23 Power Dissipation TC = 25°C 42 Power Dissipation (Note 1a) TA = 25°C 2.1 Operating and Storage Junction Temperature Range −55 to + 150 W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit °C/W RqJC Thermal Resistance, Junction to Case 3.0 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 60 1. RqJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqJA is determined by the user’s board design. a. RqJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’ x1.5’ x 0.062’ thick PCB. b. RqJA = 135°C/W when mounted on a minimum pad of 2 oz copper. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b. 135°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. www.onsemi.com 2 FDMC5614P, FDMC5614P−L701 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit −60 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = −250 mA, VGS = 0 V DBV DSS Breakdown Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C − −54 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = −48 V, VGS = 0 V − − −1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA −1.0 −1.95 −3 V DT J ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250 mA DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C − 4.7 − mV/°C Static Drain to Source On Resistance VGS = −10 V, ID = −5.7 A − 84 100 mW VGS = −4.5 V, ID = −4.4 A − 108 135 VGS = −10 V, ID = −5.7 A, TJ = 125°C − 140 168 VDS = −15 V, ID = −5.7 A − 11 − S VDS = −30 V, VGS = 0 V, f = 1 MHz − 795 1055 pF DT J rDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 140 185 pF Crss Reverse Transfer Capacitance − 60 90 pF − 10 21 ns SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg(TOT) Turn−On Delay Time Rise Time VDD = −30 V, ID = −1.0 A, VGS = −10 V, RGEN = 6 W − 11 23 ns Turn−Off Delay Time − 32 65 ns Fall Time − 11 22 ns − 15 20 nC Total Gate Charge at 10 V VGS = −10 V, VDD = −30 V, ID = −5.7 A Qgs Gate to Source Gate Charge − 1.6 2.1 nC Qgd Gate to Drain “Miller” Charge − 2.7 3.5 nC DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Forward Voltage VGS = 0 V, IS = −3.2 A − −0.8 −1.2 V trr Reverse Recovery Time IF = −3.2 A, di/dt = 100 A/ms − − 36 ns Qrr Reverse Recovery Charge − − 29 nC VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FDMC5614P, FDMC5614P−L701 −ID, DRAIN CURRENT (A) 25 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = −10 V 20 VGS = −4.5 V VGS = −5 V 15 VGS = −3.5 V 10 VGS = −3.0 V 5 0 PULSE DURATION = 300 ms DUTY CYCLE = 2.0% MAX 0 1 2 3 4 5 2.0 VGS = −3.5 V 1.6 VGS = −5.0 V 1.4 VGS = −4.5 V 1.2 VGS = −10 V 1.0 0.8 0 5 350 ID = −5.7 A VGS = −10 V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −50 −25 0 25 50 75 200 TJ = 125°C 150 100 TJ = 25°C 2 −IS, REVERSE DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) TJ = 25°C 10 TJ = 125°C 5 0 TJ = −55°C 0 1 2 3 4 5 4 5 6 7 9 8 10 Figure 4. On−Resistance vs. Gate to Source Voltage VDD = −5 V 15 3 −VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 300 ms DUTY CYCLE = 2.0% MAX 20 25 PULSE DURATION = 300 ms DUTY CYCLE = 2.0% MAX 250 50 100 125 150 Figure 3. Normalized On Resistance vs. Junction Temperature 25 20 ID = −5.7 A 300 TJ, JUNCTION TEMPERATURE (°C) 30 15 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE Figure 1. On Region Characteristics 1.8 10 −ID, DRAIN CURRENT (A) −VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 PULSE DURATION = 300 ms DUTY CYCLE = 2.0% MAX VGS = −3.0 V 1.8 6 30 10 VGS = 0 V TJ = 125°C 1 TJ = 25°C 0.1 0.01 1E−3 1E−4 −VGS, GATE TO SOURCE VOLTAGE (V) TJ = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 −VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.4 FDMC5614P, FDMC5614P−L701 10 2000 ID = −5.7 A 1000 VDD = −20 V 8 CAPACITANCE (pF) −VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 6 VDD = −30 V 4 VDD = −40 V 2 0 CISS 100 COSS CRSS f = 1 MHz VGS = 0 V 0 4 8 12 10 0.1 16 Qg, GATE CHARGE (nC) 60 8 7 6 5 TJ = 25°C 3 2 TJ = 125°C 1 0.01 0.1 1 10 60 100 ms 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC SINGLE PULSE TJ = MAX RATED RqJA = 135°C/W TA = 25°C 0.01 1E−3 100 rDS(on) LIMITED 10 0.1 tAV, TIME IN AVALANCHE (ms) 1 10 100 200 −VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Forward Bias Safe Operating Area Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance vs. Drain to Source Voltage −ID, DRAIN CURRENT (A) −IAS, AVALANCHE CURRENT (A) Figure 7. Gate Charge Characteristics 4 1 −VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 VGS = −10 V FOR TEMPERATURES ABOVE 25°C DERATE PEAK CURRENT AS FOLLOWS: 100 ƪǸ I + I 25 ƫ 150 * T A 125 10 SINGLE PULSE RqJA = 135°C/W TA = 25°C 1 0.5 −4 10 −3 10 −2 10 −1 10 10 0 10 1 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 5 10 2 10 3 FDMC5614P, FDMC5614P−L701 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) t1 t2 0.01 ZqJA(t) = r(t) × RqJA RqJA = 135°C/W Peak TJ = PDM × ZqJA(t) + TA Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0005 −4 10 −3 −2 10 10 −1 0 10 10 t, RECTANGULAR PULSE DURATION (s) 10 1 10 2 10 3 Figure 12. Transient Thermal Response Curve ORDERING INFORMATION Device Marking Package Type Reel Size Tape Width Shipping† FDMC5614P FDMC5614P WDFN8 3.3x3.3, 0.65P Power 33 (Pb−Free) 7” 8 mm 3000 / Tape & Reel FDMC5614P−L701 FDMC5614P WDFN8 3.3x3.3, 0.65P Power 33 (Pb−Free) 7” 8 mm 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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