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P-Channel PowerTrench® MOSFET
-20 V, -14 A, 8.4 mΩ
Features
General Description
Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Applications
Termination is Lead-free and RoHS Compliant
Battery Management
HBM ESD capability level > 3.6 KV typical (Note 4)
8
7
6
Load Switch
D D D D
5
Pin 1
1
G S S S
2 3 4
Pin 1
S
D
S
D
S
D
G
D
Bottom
Top
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±12
V
(Note 1a)
-14
A
-50
Single Pulse Avalanche Energy
PD
Units
V
-40
-Pulsed
EAS
Ratings
-20
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
38
26
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
4.9
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC612PZ
Device
FDMC612PZ
©2013 Fairchild Semiconductor Corporation
FDMC612PZ Rev.C3
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC612PZ P-Channel PowerTrench® MOSFET
October 2013
FDMC612PZ
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±12 V, VDS = 0 V
±10
μA
-1.5
V
-20
V
-19
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
VGS = -4.5 V, ID = -14 A
5.9
8.4
rDS(on)
Static Drain to Source On Resistance
VGS = -2.5 V, ID = -11 A
8.2
13
VGS = -4.5 V, ID = -14 A, TJ = 125 °C
8.3
13
VDS = -5 V, ID = -14 A
85
gFS
Forward Transconductance
-0.6
-0.9
9
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
5710
7995
pF
1215
1700
pF
1170
1640
pF
26
42
ns
52
83
ns
96
154
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
81
130
ns
Qg
Total Gate Charge
53
74
nC
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -14 A,
VGS = -4.5 V, RGEN = 6 Ω
VDD = -10 V, ID = -14 A,
VGS = -4.5 V
9.4
nC
18
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -14 A
(Note 2)
-0.8
-1.3
VGS = 0 V, IS = -2 A
(Note 2)
-0.7
-1.2
IF = -14 A, di/dt = 100 A/μs
V
39
62
ns
17
31
nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined
by the user’s board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3: EAS of 38 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = -16 A, VDD = -18 V, VGS = -10 V.
4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2013 Fairchild Semiconductor Corporation
FDMC612PZ Rev.C3
2
www.fairchildsemi.com
FDMC612PZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
2.0
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
40
VGS = -3.5 V
VGS = -3.0 V
30
VGS = -2.5 V
20
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -3.0 V
1.0
VGS = -3.5 V
0
10
20
VGS = -4.5 V
30
40
50
-ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
25
ID = -14 A
VGS = -4.5 V
1.4
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
SOURCE ON-RESISTANCE (mΩ)
1.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -2.5 V
1.5
0.5
0.6
Figure 1. On-Region Characteristics
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
ID = -14 A
15
TJ = 125 oC
10
5
TJ = 25 oC
0
1.5
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
-IS, REVERSE DRAIN CURRENT (A)
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
VDS = -5 V
30
TJ = 150 oC
20
TJ = 25 oC
10
TJ = -55
0
0.0
0.5
1.0
1.5
oC
2.0
1
TJ = 150 oC
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2013 Fairchild Semiconductor Corporation
FDMC612PZ Rev.C3
VGS = 0 V
10
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC612PZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ID = -14 A
Ciss
VDD = -8 V
VDD = -10 V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
10000
4.5
3.0
VDD = -12 V
1.5
Coss
Crss
1000
f = 1 MHz
VGS = 0 V
0.0
0
20
40
500
0.1
60
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
50
50
o
-IAS, AVALANCHE CURRENT (A)
RθJC = 4.9 C/W
-ID, DRAIN CURRENT (A)
TJ = 25 oC
TJ = 100 oC
10
TJ = 125 oC
1
0.001
0.01
0.1
1
10
40
VGS = -4.5 V
30
Limited by Package
20
VGS = -2.5 V
10
0
25
100
100
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
-1
10
100
-2
VDS = 0 V
10
100 μs
-3
10
-ID, DRAIN CURRENT (A)
-Ig, GATE LEAKAGE CURRENT (A)
75
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
-4
10
-5
TJ =
10
125 oC
-6
10
-7
10
-8
10
TJ = 25
oC
10
1 ms
10 ms
1
0.1
-9
10
THIS AREA IS
LIMITED BY rDS(on)
0
6
12
0.01
0.01
18
-VGS, GATE TO SOURCE VOLTAGE (V)
1s
10 s
DC
RθJA = 125 oC/W
0.1
CURVE BENT TO
MEASURED DATA
1
10
100
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Gate Leakage Current vs Gate to
Source Voltage
©2013 Fairchild Semiconductor Corporation
FDMC612PZ Rev.C3
100 ms
SINGLE PULSE
TJ = MAX RATED
TA = 25 oC
-10
10
50
o
tAV, TIME IN AVALANCHE (ms)
Figure 12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
FDMC612PZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
1000
SINGLE PULSE
o
RθJA = 125 C/W
100
o
TA = 25 C
10
1
0.1
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001 -4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMC612PZ Rev.C3
5
www.fairchildsemi.com
FDMC612PZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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