Single N-Channel Logic-Level Power Trench® MOSFET
30 V, 11.5 A, 10.5 mΩ
Features
General Description
Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 11.5 A
This single N-Channel MOSFET in the thermally efficient
MicroFET Package has been specifically designed to perform
well in Point of Load converters. Providing an optimized balance
between rDS(on) and gate charge this device can be effectively
used as a “high side” control swtich or “low side” synchronous
rectifier.
Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 10 A
Low Qg, Qgd and Rg for efficient switching performance
RoHS Compliant
Application
Point of Load Converters
1/16 Brick Synchronous Rectifier
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
MLP 3.3X3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
30
Units
V
±20
V
11.5
A
40
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
2.1
(Note 1a)
Operating and Storage Junction Temperature Range
0.9
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
3
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC6296
Device
FDMC6296
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC6296 N-Channel Power Trench® MOSFET
November 2010
FDMC6296
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3
V
30
V
26
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 11.5 A
8.7
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 10 A
10.6
15
VGS = 10 V, ID = 11.5 A, TJ = 125 °C
13
17
VDD = 5 V, ID = 11.5 A
49
gFS
Forward Transconductance
1
1.8
-6
mV/°C
10.5
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
VGS = 0 V, f = 1 MHz
1610
2141
406
540
pF
pF
150
225
pF
Ω
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
10
20
ns
tr
Rise Time
3
10
ns
td(off)
Turn-Off Delay Time
27
43
ns
tf
Fall Time
8
16
ns
14
19
nC
VDD = 15 V, ID = 1.0 A,
VGS = 10 V, RGEN = 6 Ω
Qg(TOT)
Total Gate Charge at 5V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VGS = 5 V
VDD = 15 V,
ID = 11.5 A
4
nC
4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A
(Note 2)
IF = 11.5 A, di/dt = 100 A/μs
0.7
1.2
V
30
ns
22
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
2
www.fairchildsemi.com
FDMC6296 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 4.5 V
30
VGS = 4 V
VGS = 3.5 V
20
VGS = 3 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
3
VGS = 3.5 V
VGS = 4.5 V
2
VGS = 4 V
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
30
40
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
60
ID = 11.5 A
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 11.5 A
40
20
TJ = 25 oC
0
100 125 150
TJ = 125 oC
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
40
IS, REVERSE DRAIN CURRENT (A)
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
10
20
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
30
VDS = 5 V
TJ = 125 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
VGS = 10 V
0
2.0
Figure 1. On Region Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 3 V
4
0
1
2
3
4
10
TJ = 150 oC
TJ = 25 oC
1
0.1
0.2
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
VGS = 0 V
3
www.fairchildsemi.com
FDMC6296 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
ID = 11.5 A
VDD = 15 V
8
VDD = 10 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 20 V
4
2
0
Coss
100
0
3
6
9
12
Ciss
1000
Crss
f = 1 MHz
VGS = 0 V
50
0.1
15
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
30
12
ID, DRAIN CURRENT (A)
10
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
9
VGS = 10 V
6
VGS = 4.5 V
3
o
RθJA = 53 C/W
1
0.1
1
10
0
25
100 200
50
150
1000
P(PK), PEAK TRANSIENT POWER (W)
1 ms
10
10 ms
0.1
125
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
50
0.05
0.01
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TA, AMBIENT TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
20
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
TA = 25 oC
DC
0.1
1
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
100
10
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
1
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
VGS = 10 V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC6296 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.01
0.005 -3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
5
www.fairchildsemi.com
FDMC6296 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC6296 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I51
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
7
www.fairchildsemi.com
FDMC6296 N-Channel Power Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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AccuPower™
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