FDMC6675BZ-T

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC6675BZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 14.4 mΩ Features General Description „ Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A „ HBM ESD protection level of 8 kV typical(note 3) The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. „ Extended VGSS range (-25 V) for battery applications Application „ High performance trench technology for extremely low rDS(on) „ Load Switch in Notebook and Server „ High power and current handling capability „ Notebook Battery Pack Power Management „ Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A „ Termination is Lead-free and RoHS Compliant Bottom Top Pin 1 S S S D 5 4 G D 6 3 S D 7 2 S D 8 1 S G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG Units V ±25 V -20 (Note 1a) -Pulsed PD Ratings -30 -9.5 A -32 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 36 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.4 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC6675BZ Device FDMC6675BZ ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D5 Package MLP 3.3X3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC6675BZ P-Channel PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V -30 V 20 mV/°C -1 TJ = 125 °C -100 μA ±10 μA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -1.0 -1.9 -6 mV/°C VGS = -10 V, ID = -9.5 A 10.7 14.4 VGS = -4.5 V, ID = -6.9 A 17.4 27.0 VGS = -10 V, ID = -9.5 A, TJ = 125 °C 15.2 20.5 VDD = -5 V, ID = -9.5 A 28 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1 MHz 2154 2865 pF 392 525 pF 349 525 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = -15 V, ID = -9.5 A, VGS = -10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to -10 V Total Gate Charge VGS = 0 V to -5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15 V, ID = -9.5 A 11 20 ns 10 20 ns 44 71 ns 26 42 ns 46 65 nC 26 37 nC 6.4 nC 13 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -9.5 A (Note 2) 0.89 1.3 VGS = 0 V, IS = -1.6 A (Note 2) 0.73 1.2 V 24 38 ns 15 27 nC IF = -9.5 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D5 2 www.fairchildsemi.com FDMC6675BZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 32 5.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4 V VGS = -4.5 V 24 VGS = -6 V VGS = -10 V 16 VGS = -3.5 V 8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 2.0 2.5 4.5 VGS = -3.5 V 4.0 3.5 VGS = -4 V 3.0 2.5 VGS = -4.5 V 2.0 VGS = -6 V 1.5 1.0 VGS = -10 V 0.5 3.0 0 8 24 32 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On Region Characteristics 1.6 50 ID = -9.5 A VGS = -10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) TJ = 150 oC TJ = 25 oC 8 TJ = -55 oC 0 3 4 10 TJ = 25 oC 4 6 8 10 VGS = 0 V 10 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 5 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D5 TJ = 125 oC 20 100 VDS = -5 V 2 30 Figure 4. On-Resistance vs Gate to Source Voltage 24 1 ID = -9.5 A -VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 40 2 32 16 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5%MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC6675BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 10 5000 ID = -9.5 A 8 CAPACITANCE (pF) VDD = -10 V 6 VDD = -15 V 4 VDD = -20 V 2 Ciss 1000 Coss 0 0 10 20 30 40 100 0.1 50 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 50 -ID, DRAIN CURRENT (A) 50 -IAS, AVALANCHE CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 40 VGS = -10 V VGS = -4.5 V 30 20 Limited by Package 10 o RθJC = 3.4 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 75 100 125 150 o tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature -4 70 10 -Ig, GATE LEAKAGE CURRENT(A) -ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 10 1 ms 10 ms 1 THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s RθJA = 125 C/W 10 s TA = 25 oC DC o 0.01 0.01 VGS = 0V -5 10 TJ = 150oC -6 10 -7 10 TJ = 25oC -8 10 -9 10 0.1 1 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D5 0 Figure 12. Igss vs Vgss 4 www.fairchildsemi.com FDMC6675BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 1000 VGS = -10 V 100 SINGLE PULSE o RθJA = 125 C/W 10 o TA = 25 C 1 0.3 -3 10 -2 -1 10 10 1 10 100 1000 t, PULSE WIDTH (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 13. Single Pulse Maximum Power Dissipation 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZθJA(t) = r(t) x RθJA 0.01 0.001 -3 10 SINGLE PULSE -2 10 RθJA = 125 °C/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D5 5 www.fairchildsemi.com FDMC6675BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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