FDMC6686P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC6686P P-Channel PowerTrench® MOSFET -20 V, -56 A, 4 mΩ Features General Description „ Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness. „ Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A „ Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A „ High performance trench technology for extremely low rDS(on) Applications „ High power and current handling capability in a widely used surface mount package „ Load Switch „ Lead-free and RoHS Compliant „ Battery Management „ Power Management „ Reverse Polarity Protection Pin 1 Pin 1 S D D Top D S S S D S D S D G D G D Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID -Pulsed PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings -20 Units V ±8 V -56 (Note 1a) -18 (Note 3) -377 (Note 1a) 2.3 40 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.1 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC6686P Device FDMC6686P ©2014 Fairchild Semiconductor Corporation FDMC6686P Rev.C1 Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC6686P P-Channel PowerTrench® MOSFET February 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA -1 V -20 V -15 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -0.4 -0.75 3 mV/°C VGS = -4.5 V, ID = -18 A 3.3 4 VGS = -2.5 V, ID = -16 A 4.1 5.7 VGS = -1.8 V, ID = -11 A 6 11.5 VGS = -4.5 V, ID = -18 A, TJ = 125 °C 4.3 6.5 VDS = -5 V, ID = -18 A 116 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -10 V, VGS = 0 V, f = 1 MHz 8800 13200 pF 1520 2280 pF 1340 2010 pF Ω 6.2 Switching Characteristics td(on) Turn-On Delay Time 25 40 ns tr Rise Time 77 122 ns td(off) Turn-Off Delay Time 317 506 ns tf Fall Time 178 285 ns Qg Total Gate Charge 87 122 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -18 A, VGS = -4.5 V, RGEN = 6 Ω VDD = -10 V, ID = -18 A, VGS = -4.5 V 14 nC 24 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -18 A (Note 2) -0.7 -1.2 VGS = 0 V, IS = -2 A (Note 2) -0.6 -1.2 IF = -18 A, di/dt = 100 A/μs V 38 61 ns 24 39 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Pulse Id refers to Forward Bias Safe Operation Area. ©2014 Fairchild Semiconductor Corporation FDMC6686P Rev.C1 2 www.fairchildsemi.com FDMC6686P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 200 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3.8 V 150 VGS = -3 V VGS = -2.5 V 100 VGS = -1.8 V 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 2.0 VGS = -1.8 V 2 VGS = -2.5 V 1 VGS = -3 V 0 VGS = -4.5 V 50 100 150 200 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On- Resistance vs Drain Current and Gate Voltage 20 ID = -18 A VGS = -4.5 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (mΩ) 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.8 V 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) 150 VDS = -5 V 100 TJ = 150 oC TJ = 25 oC TJ = -55 oC 0 1 2 ID = -18 A 10 TJ = 125 oC 5 TJ = 25 oC 1.5 2.0 2.5 3.0 3.5 4.0 200 100 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 3 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2014 Fairchild Semiconductor Corporation FDMC6686P Rev.C1 4.5 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 15 -VGS, GATE TO SOURCE VOLTAGE (V) 200 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 1.4 www.fairchildsemi.com FDMC6686P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 50000 ID = -18 A VDD = -8 V Ciss CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -10 V VDD = -12 V 1.5 10000 Coss Crss 1000 f = 1 MHz VGS = 0 V 100 0.1 0.0 0 40 80 120 1 10 Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 100 500 o 10 us -ID, DRAIN CURRENT (A) RθJC = 3.1 C/W -ID, DRAIN CURRENT (A) 80 VGS = -4.5 V 60 VGS = -2.5 V 40 20 100 100 us 10 THIS AREA IS LIMITED BY rDS(on) 50 75 100 125 RθJC = 3.1 oC/W 0.1 0.1 150 1 ms 10 ms DC SINGLE PULSE TJ = MAX RATED 1 TC = 25 oC 0 25 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) CURVE BENT TO MEASURED DATA 1 o TC, CASE TEMPERATURE ( C) 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Maximum Continuous Drain Current vs Case Temperature Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 10000 SINGLE PULSE o RθJC = 3.1 C/W o TC = 25 C 1000 100 10 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2014 Fairchild Semiconductor Corporation FDMC6686P Rev.C1 4 www.fairchildsemi.com FDMC6686P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: SINGLE PULSE ZθJC(t) = r(t) x RθJC RθJC = 3.1 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 0.001 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Case Transient Thermal Response Curve ©2014 Fairchild Semiconductor Corporation FDMC6686P Rev.C1 5 www.fairchildsemi.com FDMC6686P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3.40 3.20 PKG CL 8 2.37 MIN A (0.45) 8 B 5 PKG CL 3.40 3.20 PKG CL SYM CL 5 2.15 MIN (0.40) (0.65) 0.70 MIN PIN 1 INDICATOR 1 4 1 4 0.65 1.95 SEE DETAIL A 0.65 1 LAND PATTERN RECOMMENDATION 0.10 C 1.95 0.10 C A B 0.37 (8X) 0.27 0.42 MIN (8X) 4 0.60 0.40 0.80 0.70 0.08 C 0.25 0.15 0.05 0.00 C SEATING PLANE PKG CL 1.99 1.79 SCALE: 2X NOTES: UNLESS OTHERWISE SPECIFIED (0.34) (0.52 TYP) 8 5 (2.27) (0.33) TYP A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) DRAWING FILE NAME: MKT-PQFN08SREV1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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