FDMC7570S

FDMC7570S MOSFET – N-Channel, POWERTRENCH), SyncFETt 25 V, 40 A, 2 mW www.onsemi.com General Description The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Pin 1 Features Power 33 PQFN8 CASE 483AK • Max RDS(on) = 2 mW at VGS = 10 V, ID = 27 A • Max RDS(on) = 2.9 mW at VGS = 4.5 V, ID = 21.5 A • Advanced Package and Combination for Low RDS(on) and High • • • Efficiency SyncFET Schottky Body Diode 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU Low Side Switch Networking Point of Load Low Side Switch Telecom Secondary Side Rectification PIN ASSIGNMENT D 5 4 G D 6 3 S D 7 2 S D 8 1 S MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Rating Unit Drain to Source Voltage VDS 25 V Gate to Source Voltage (Note 4) VGS ±20 V Drain Current − Continuous (Package limited) TC = 25°C − Continuous (Silicon limited) TC = 25°C − Continuous TA = 25°C (Note 1a) − Pulsed ID A 40 132 27 120 Single Pulse Avalanche Energy (Note 3) EAS 144 mJ Power Dissipation TC = 25°C PD 59 W Power Dissipation TA = 25°C (Note 1a) TJ, TSTG −55 to +150 Operating and Storage Junction Temperature Range &Y&Z&3&K FDMC 7570S 2.3 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Y &Z &3 &K FDMC7570S = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Data Code = 2−Digit Lot Traceability Code = Specific Device Code ORDERING INFORMATION Device FDMC7570S Package Shipping† PGFN8 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 June, 2019 − Rev. 3 1 Publication Order Number: FDMC7570S/D FDMC7570S THERMAL CHARACTERISTICS Rating Symbol Value Unit °C/W Thermal Resistance, Junction to Case RθJC 2.1 Thermal Resistance, Junction to Ambient (Note 1a) RθJA 53 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min BVDSS 25 Typ Max Unit OFF CHARACTERISTIC Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V Breakdown Voltage Temperature / Coefficient ID = 10 mA, referenced to 25°C Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IDSS 500 mA Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V IGSS 100 nA Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA VGS(th) 3 V Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C Static Drain to Source On Resistance VGS = 10 V, ID = 27 A V 21 DBVDSS / DTJ mV/°C ON CHARACTERISTICS Forward Transconductance 1.2 1.7 DVGS(th) / DTJ −4 mV/°C RDS(on) 1.6 2 VGS = 4.5 V, ID = 21.5 A 2.4 2.9 VGS = 10 V, ID = 27 A, TJ = 125°C 2.2 2.8 mW VDS = 5 V, ID = 27 A gFS 154 S VDS = 13 V, VGS = 0 V, f = 1 MHz Ciss 3315 4410 pF Output Capacitance Coss 1010 1345 pF Reverse Transfer Capacitance Crss 168 255 pF Rg 1.2 2.1 W td(on) 14 26 ns tr 6.8 14 ns td(off) 34 55 ns tf 4.5 10 ns DYNAMIC CHARACTERISTICS Input Capacitance Gate Resistance SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time VDD = 13 V, ID = 27 A, VGS = 10 V, RGEN = 6 W Turn−Off Delay Time Fall Time Total Gate Charge VGS = 0 V to 10 V, VDD = 13 V Qg 49 68 nC Total Gate Charge VGS = 0 V to 4.5 V, VDD = 13 V Qg 22 31 nC Gate to Source Gate Charge ID = 27 A Qgs 10.8 nC Qgd 5.5 nC VSD 0.78 1.2 0.43 0.8 trr 30 48 ns Qrr 29 46 nC Gate to Drain “Miller” Charge DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Forward Voltage VGS = 0 V, IS = 27 A (Note 2) VGS = 0 V, IS = 2 A (Note 2) Reverse Recovery Time IF = 27 A, di/dt = 300 A/ms Reverse Recovery Charge V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FDMC7570S NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a) 53°C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. EAS of 144 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A. 4. As an N−ch device, the negative Vgs rating is for lower duty cycle pulse occurrence only. No continuous rating is implied. www.onsemi.com 3 FDMC7570S TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 90 VGS = 3 V PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 60 VGS = 2.7 V 30 0 0 1 2 3 4 V, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 4 VGS = 3 V 3 VGS = 3.3 V 2 VGS = 4.5 V 1 0 VGS = 10 V 0 30 120 10 ID = 27 A VGS = 10 V RDS(on) , DRAIN TO 1.2 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 ID = 27 A 8 4 TJ = 125 oC 2 TJ = 25 oC 0 75 100 125 150 2 4 200 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 90 TJ = 125 oC 60 TJ = 25 oC 30 TJ = −55 oC 2.0 2.5 3.0 8 10 Figure 4. On−Resistance vs. Gate to Source Voltage 120 1.5 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On−Resistance vs. Junction Temperature VDS = 5 V PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 6 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) 90 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.3 0 1.0 60 ID, DRAIN CURRENT (A) 1.5 1.4 VGS = 2.7 V 5 5 Figure 1. On−Region Characteristics NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 6 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE VGS = 10 V VGS = 4.5 V VGS = 3.3 V SOURCE ON−RESISTANCE (mW) ID, DRAIN CURRENT (A) 120 3.5 VGS = 0 V 10 1 TJ = 25 oC 0.1 0.01 0.0 4.0 TJ = 125 oC TJ = −55oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 FDMC7570S TYPICAL CHARACTERISTICS (continued) 10 5000 IDSS = 27 A Ciss 8 VDD = 13 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) (TJ = 25°C unless otherwise noted) 6 VDD = 10 V VDD = 16 V 4 2 1000 Coss 100 f = 1 MHz 0 0 10 20 30 40 50 0.1 50 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 135 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 90 VGS = 4.5 V 45 o RqJC = 2.1 C/W Limited by Package 1 0.01 0.1 1 10 100 0 25 500 50 tAV, TIME IN AVALANCHE (ms) 200 100 2000 1000 P(PK), PEAK TRANSIENT POWER (W) 1 1ms 10 ms THIS AREA IS LIMITED BY R DS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RqJA = 125 oC/W DC o TA = 25 C 0.01 0.01 0.1 1 10 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 ms 10 75 TC, CASE TEMPERATURE ( oC) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss VGS = 0 V 100 SINGLE PULSE VGS = 10 V o RqJA = 125 C/W o TA = 25 C 100 10 1 0.5 −4 10 −3 10 −2 10 −1 10 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDMC7570S TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) NORMALIZED THERMAL IMPEDANCE, ZqJA 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA + TA o RqJA = 125 C/W 0.001 0.0005 −4 10 −3 −2 10 10 −1 10 1 100 10 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve SyncFET SCHOTTKY BODY DIODE CHARACTERISTICS ON Semiconductor’s SyncFET process embeds a Schottky diode in parallel with POWERTRENCH MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMC7570S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. −2 IDSS, REVERSE LEAKAGE CURRENT (A) 30 25 CURRENT (A) 20 15 di/dt = 300 A/ m s 10 5 0 −5 0 50 100 150 200 10 TJ = 125 oC −3 10 TJ = 100 oC −4 10 −5 10 −6 10 TIME (ns) TJ = 25 oC 0 5 10 15 VDS , REVERSE VOLTAGE (V) Figure 14. FDMC7570S SyncFET Body Diode Reverse Recovery Characteristic Figure 15. SyncFET Body Diode Reverse Leakage vs. Drain−Source Voltage POWERTRENCH is a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 3.3X3.3, 0.65P CASE 483AK ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON13660G PQFN8 3.3X3.3, 0.65P DATE 12 OCT 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative