FDMC7660

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. General Description N-Channel PowerTrench® MOSFET This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. 30 V, 20 A, 2.2 mΩ Features „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A Applications „ High performance technology for extremely low rDS(on) „ DC - DC Buck Converters „ Termination is Lead-free and RoHS Compliant „ Point of Load „ High Efficiency Load Switch and Low Side Switching Bottom Top S D D D Pin 1 S S G D S D S D S D G D Power 33 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 40 100 (Note 1a) -Pulsed A 20 200 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 200 mJ 41 (Note 1a) Operating and Storage Junction Temperature Range W 2.3 -55 to + 150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7660 Device FDMC7660 ©2012 Semiconductor Components Industries, LLC. October-2017, Rev.3 Package Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC7660/D FDMC7660 N-Channel PowerTrench® MOSFET FDMC7660 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 2.5 V 30 V 14 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.7 -6 mV/°C VGS = 10 V, ID = 20 A 1.8 2.2 VGS = 4.5 V, ID = 18 A 2.6 3.3 VGS = 10 V, ID = 20 A, TJ = 125°C 2.2 3.1 VDS = 5 V, ID = 20 A 163 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 3630 4830 pF 1345 1790 pF 110 165 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, ID = 20 A, VGS = 10 V, RGEN = 6 Ω 14 25 6.8 14 ns ns 36 58 ns tf Fall Time 5.7 11 ns Qg Total Gate Charge VGS = 0 V to 10 V 54 86 nC Qg Total Gate Charge 38 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 20 A 24 Qgs Qgd Gate to Drain “Miller” Charge nC 11 nC 5.6 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 20 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 IF = 20 A, di/dt = 100 A/μs V 45 63 ns 25 35 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. b. 125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 20 A, VDD = 27 V, VGS = 10 V 4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. www.onsemi.com 2 FDMC7660 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 3.0 200 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 10 V 150 VGS = 4.5 V VGS = 4 V 100 VGS = 3.5 V 50 VGS = 3 V 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.5 VGS = 3 V VGS = 3.5 V 2.0 VGS = 4 V 1.5 1.0 2.0 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 200 15 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 ID = 20 A 5 TJ = 125oC TJ = 25 oC 0 100 125 150 2 4 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 VDS = 5 V TJ = 150 oC 100 TJ = 25 oC 50 TJ = -55 oC 0 3 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 200 2 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 0.5 4 200 100 VGS = 0 V TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 ID = 20 A Ciss 8 CAPACITANCE (nF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Coss 1 Crss f = 1 MHz VGS = 0 V 2 0.1 0 0 20 40 0.05 0.1 60 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 150 30 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJC = 3 C/W TJ = 25 oC TJ = 100 oC TJ = 125 oC VGS = 10 V 100 VGS = 4.5 V 50 Limited by Package 1 0.01 0.1 1 10 0 25 100 300 50 150 10 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RθJA = 125 oC/W 1s 10 s TA = 25 oC DC 0.01 0.01 0.1 1 10 100 P(PK), PEAK TRANSIENT POWER (W) 1000 DERIVED FROM TESTED DATA 100 ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -3 10 VDS, DRAIN to SOURCE VOLTAGE (V) -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 2 10 3 10 FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 1E-3 -3 10 -2 10 -1 10 0 10 1 10 100 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 1000 FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC7660 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout www.onsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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