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FDMC7680
N-Channel Power Trench® MOSFET
30 V, 14.8 A, 7.2 mΩ
Features
General Description
Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 14.8 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Max rDS(on) = 9.5 mΩ at VGS = 4.5 V, ID = 12.4 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±20
V
(Note 1a)
14.8
A
45
Single Pulse Avalanche Energy
PD
Units
V
18
-Pulsed
EAS
Ratings
30
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
72
31
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
4.0
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7680
Device
FDMC7680
©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C5
Package
MLP 3.3x3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC7680 N-Channel Power Trench® MOSFET
June 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
30
V
15
VDS = 24 V, VGS = 0 V
mV/°C
1
TJ = 125 °C
250
VGS = 20 V, VDS = 0 V
μA
100
nA
3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1.2
2.0
-6
mV/°C
VGS = 10 V, ID = 14.8 A
5.8
7.2
VGS = 4.5 V, ID = 12.4 A
7.3
9.5
VGS = 10 V, ID = 14.8 A
TJ = 125 °C
7.4
9.2
VDD = 5 V, ID = 14.8 A
68
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2145
2855
pF
770
1020
pF
75
115
pF
0.5
1.6
Ω
12
22
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 15 V, ID = 14.8 A,
VGS = 10 V, RGEN = 6 Ω
4
10
ns
25
40
ns
3
10
ns
Total Gate Charge
VGS = 0 V to 10 V
30
42
nC
Total Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V
ID = 14.8 A
14
19
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
nC
7
nC
4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 14.8 A
(Note 2)
0.84
1.2
VGS = 0 V, IS = 1.9 A
(Note 2)
0.73
1.2
34
54
ns
15
24
nC
IF = 14.8 A, di/dt = 100 A/μs
V
NOTES:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3: EAS of 72 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C5
2
www.fairchildsemi.com
FDMC7680 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 6 V
36
VGS = 3.5 V
VGS = 4.5 V
27
VGS = 4 V
18
9
VGS = 3 V
0
0.0
0.5
1.0
1.5
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
45
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3.5
VGS = 3.5 V
3.0
2.5
VGS = 4.5 V
2.0
VGS = 4 V
1.5
1.0
2.0
0
9
18
VDS, DRAIN TO SOURCE VOLTAGE (V)
45
25
rDS(on), DRAIN TO
ID = 14.8 A
VGS = 10 V
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
36
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
ID = 14.8 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
15
TJ = 125 oC
10
5
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate to
Source Voltage
45
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
36
ID, DRAIN CURRENT (A)
27
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
1.4
VGS = 10 V
VGS = 6 V
0.5
VDS = 5 V
27
18
TJ = 150 oC
TJ = 25 oC
9
TJ = -55 oC
0
1
2
3
4
VGS = 0 V
10
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
5
TJ = 150 oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C5
3
1.2
www.fairchildsemi.com
FDMC7680 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
3000
ID = 14.8 A
VDD = 10 V
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 20 V
VDD = 15 V
6
4
2
Ciss
1000
Coss
100
0
0
4
8
12
16
20
24
28
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
50
VGS = 10 V
40
30
VGS = 4.5 V
20
10
0.1
1
10
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
1 ms
10 ms
100 ms
1s
10 s
DC
TA = 25 oC
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
125
150
2000
1000
VGS = 10 V
100
10
SINGLE PULSE
RθJA = 125 oC/W
1 TA = 25 oC
0.5
-4
-3
-2
10
10
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C5
100
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100us
RθJA = 125 oC/W
75
o
60
SINGLE PULSE
TJ = MAX RATED
50
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
THIS AREA IS
LIMITED BY rDS(on)
Limited by Package
o
RθJC = 4.0 C/W
0
25
100
tAV, TIME IN AVALANCHE (ms)
0.01
0.01
30
60
10
0.1
10
Figure 8. Capacitance vs. Drain
to Source Voltage
20
1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1
0.01
Crss
50
0.1
32
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC7680 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.001
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
0.0001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C5
5
www.fairchildsemi.com
FDMC7680 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC7680 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEU-C08
©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C5
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C5
7
www.fairchildsemi.com
FDMC7680 N-Channel Power Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
®*
®
AX-CAP®*
FRFET®
Global Power ResourceSM
PowerTrench®
BitSiC™
®
TinyBoost
GreenBridge™
PowerXS™
Build it Now™
TinyBuck®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyCalc™
®
Green FPS™ e-Series™
QFET
CorePOWER™
TinyLogic®
Gmax™
QS™
CROSSVOLT™
TINYOPTO™
GTO™
Quiet Series™
CTL™
TinyPower™
IntelliMAX™
Current Transfer Logic™
RapidConfigure™
TinyPWM™
ISOPLANAR™
DEUXPEED®
™
TinyWire™
Marking Small Speakers Sound Louder
Dual Cool™
TranSiC™
and Better™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
TriFault Detect™
MegaBuck™
EfficentMax™
SignalWise™
TRUECURRENT®*
MICROCOUPLER™
ESBC™
SmartMax™
μSerDes™
MicroFET™
SMART START™
®
MicroPak™
Solutions for Your Success™
MicroPak2™
SPM®
Fairchild®
®
MillerDrive™
UHC®
STEALTH™
Fairchild Semiconductor
®
MotionMax™
Ultra
FRFET™
SuperFET
FACT Quiet Series™
mWSaver®
SuperSOT™-3
UniFET™
FACT®
OptoHiT™
SuperSOT™-6
VCX™
FAST®
OPTOLOGIC®
SuperSOT™-8
VisualMax™
FastvCore™
®
®
OPTOPLANAR
SupreMOS
VoltagePlus™
FETBench™
SyncFET™
XS™
FPS™
Sync-Lock™
仙童 ™
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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