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N-Channel PowerTrench® SyncFETTM
30 V, 18 A, 9.3 mΩ
Features
General Description
Max rDS(on) = 9.3 mΩ at VGS = 10 V, ID = 12.5 A
This FDMC7692S is produced using ON Semiconductor’s
advanced PowerTrench® process that has been especially
tailored to minimize the on-state resistance. This device is well
suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10.4 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
Applications
DC - DC Buck Converters
Notebook DC - DC application
Bottom
Top
Pin 1
S
S
S
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
G
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±20
V
(Note 1a)
12.5
A
45
Sinlge Pulse Avalanche Energy
PD
Units
V
18
-Pulsed
EAS
Ratings
30
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
21
mJ
27
(Note 1a)
Operating and Storage Junction Temperature Range
W
2.3
-55 to +150
°C
4.7
°C/W
53
°C/W
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
FDMC7692S
Device
FDMC7692S
©2010 Semiconductor Components Industries, LLC.
October-2017, Rev.3
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
Publication Order Number:
FDMC7692S/D
FDMC7692S N-Channel PowerTrench® SyncFETTM
FDMC7692S
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 10 mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
500
μA
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
3.0
V
16
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10 mA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1.2
2.0
-5
mV/°C
VGS = 10 V, ID = 12.5 A
7.8
9.3
VGS = 4.5 V, ID = 10.4 A
10.8
13.6
VGS = 10 V, ID = 12.5 A
TJ = 125 °C
9.6
13.0
VDS = 5 V, ID = 12.5 A
62
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1040
1385
445
590
pF
pF
40
60
pF
1.1
2.9
Ω
9
17
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 15 V, ID = 12.5 A,
VGS = 10 V, RGEN = 6 Ω
3
10
ns
19
34
ns
3
10
ns
Total Gate Charge
VGS = 0 V to 10 V
16
23
nC
Qg
Total Gate Charge
10
nC
Gate to Source Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V
ID = 12.5 A
8
Qgs
Qgd
Gate to Drain “Miller” Charge
4
nC
2
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12.5 A
(Note 2)
0.9
1.3
VGS = 0 V, IS = 0.9 A
(Note 2)
0.5
0.7
21
33
ns
16
29
nC
IF = 12.5 A, di/dt = 300 A/μs
V
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12.0 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 3.2 A .
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2
FDMC7692S N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25 °C unless otherwise noted
45
ID, DRAIN CURRENT (A)
36
VGS = 6 V
VGS = 4.5 V
27
VGS = 4 V
18
VGS = 3.5 V
9
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
0.2
0.4
0.6
0.8
3.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3.0
VGS = 3.5 V
2.5
VGS = 4 V
2.0
VGS = 4.5 V
1.5
VGS = 6 V
1.0
VGS = 10 V
0.5
1.0
0
9
18
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
45
40
ID = 12.5 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
36
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 1. On-Region Characteristics
45
30
20
TJ = 125 oC
10
TJ = 25 oC
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
100
IS, REVERSE DRAIN CURRENT (A)
36
VDS = 5 V
27
TJ = 125 oC
18
TJ = 25 oC
9
TJ = -55 oC
0
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1
ID = 12.5 A
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
27
ID, DRAIN CURRENT (A)
3
4
5
VGS = 0 V
10
TJ = 125 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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3
1.2
FDMC7692S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE (V)
10
3000
IDSS = 12.5 A
VDD = 10 V
8
CAPACITANCE (pF)
1000
VDD = 15 V
6
VDD = 20 V
4
2
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
0
0
3
6
9
12
15
10
0.1
18
1
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
20
100
10
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
30
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
10
100 us
1ms
1
0.1
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
o
RθJA = 125 C/W
DC
o
TA = 25 C
1
0.001
0.01
0.1
1
10
0.01
0.01
50
tAV, TIME IN AVALANCHE (ms)
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
P(PK), PEAK TRANSIENT POWER (W)
1000
VGS = 10V
SINGLE PULSE
o
RθJA = 125 C/W
o
TA = 25 C
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
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4
100
1000
FDMC7692S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
NOTES:
ZθJA(t) = r(t) x RθJA
0.001
0.0001
-4
10
RθJA = 125 °C/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
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5
100
1000
FDMC7692S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
SyncFET Schottky body diode
Characteristics
ON Semiconductor’s SyncFET process embeds a Schottky
diode in parallel with PowerTrench MOSFET. This diode
exhibits
similar
characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 13
shows
the
reverse
recovery
characteristic of the
FDMC7692S.
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
15
CURRENT (A)
10
didt = 300 A/μs
5
0
-5
0
50
100
150
200
250
IDSS, REVERSE LEAKAGE CURRENT (uA)
4
TIME (ns)
10
TJ = 125 oC
3
10
TJ = 100 oC
2
10
1
10
TJ = 25 oC
0
10
-1
10
0
5
10
15
20
25
VDS, REVERSE VOLTAGE (V)
Figure 13. SyncFET body diode reverse
recovery characteristic
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage
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6
30
FDMC7692S N-Channel PowerTrench® SyncFETTM
Typical Characteristics (continued)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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