FDMC7692S_F127

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Other names and brands may be claimed as the property of others. N-Channel PowerTrench® SyncFETTM 30 V, 18 A, 9.3 mΩ Features General Description „ Max rDS(on) = 9.3 mΩ at VGS = 10 V, ID = 12.5 A This FDMC7692S is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs. „ Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10.4 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant Applications „ DC - DC Buck Converters „ Notebook DC - DC application Bottom Top Pin 1 S S S D 5 4 G D 6 3 S D 7 2 S D 8 1 S G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 12.5 A 45 Sinlge Pulse Avalanche Energy PD Units V 18 -Pulsed EAS Ratings 30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 21 mJ 27 (Note 1a) Operating and Storage Junction Temperature Range W 2.3 -55 to +150 °C 4.7 °C/W 53 °C/W Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1a) Package Marking and Ordering Information Device Marking FDMC7692S Device FDMC7692S ©2010 Semiconductor Components Industries, LLC. October-2017, Rev.3 Package MLP 3.3X3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC7692S/D FDMC7692S N-Channel PowerTrench® SyncFETTM FDMC7692S Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 3.0 V 16 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.2 2.0 -5 mV/°C VGS = 10 V, ID = 12.5 A 7.8 9.3 VGS = 4.5 V, ID = 10.4 A 10.8 13.6 VGS = 10 V, ID = 12.5 A TJ = 125 °C 9.6 13.0 VDS = 5 V, ID = 12.5 A 62 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1040 1385 445 590 pF pF 40 60 pF 1.1 2.9 Ω 9 17 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 15 V, ID = 12.5 A, VGS = 10 V, RGEN = 6 Ω 3 10 ns 19 34 ns 3 10 ns Total Gate Charge VGS = 0 V to 10 V 16 23 nC Qg Total Gate Charge 10 nC Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 12.5 A 8 Qgs Qgd Gate to Drain “Miller” Charge 4 nC 2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 12.5 A (Note 2) 0.9 1.3 VGS = 0 V, IS = 0.9 A (Note 2) 0.5 0.7 21 33 ns 16 29 nC IF = 12.5 A, di/dt = 300 A/μs V Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12.0 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 3.2 A . www.onsemi.com 2 FDMC7692S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted 45 ID, DRAIN CURRENT (A) 36 VGS = 6 V VGS = 4.5 V 27 VGS = 4 V 18 VGS = 3.5 V 9 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.2 0.4 0.6 0.8 3.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3.0 VGS = 3.5 V 2.5 VGS = 4 V 2.0 VGS = 4.5 V 1.5 VGS = 6 V 1.0 VGS = 10 V 0.5 1.0 0 9 18 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 45 40 ID = 12.5 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 36 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On-Region Characteristics 45 30 20 TJ = 125 oC 10 TJ = 25 oC 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 100 IS, REVERSE DRAIN CURRENT (A) 36 VDS = 5 V 27 TJ = 125 oC 18 TJ = 25 oC 9 TJ = -55 oC 0 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1 ID = 12.5 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 27 ID, DRAIN CURRENT (A) 3 4 5 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDMC7692S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 10 3000 IDSS = 12.5 A VDD = 10 V 8 CAPACITANCE (pF) 1000 VDD = 15 V 6 VDD = 20 V 4 2 Ciss Coss 100 Crss f = 1 MHz VGS = 0 V 0 0 3 6 9 12 15 10 0.1 18 1 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 100 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 25 oC TJ = 100 oC TJ = 125 oC 10 100 us 1ms 1 0.1 THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s o RθJA = 125 C/W DC o TA = 25 C 1 0.001 0.01 0.1 1 10 0.01 0.01 50 tAV, TIME IN AVALANCHE (ms) 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 1000 VGS = 10V SINGLE PULSE o RθJA = 125 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 4 100 1000 FDMC7692S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: ZθJA(t) = r(t) x RθJA 0.001 0.0001 -4 10 RθJA = 125 °C/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve www,onsemi.com 5 100 1000 FDMC7692S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics ON Semiconductor’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 13 shows the reverse recovery characteristic of the FDMC7692S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 15 CURRENT (A) 10 didt = 300 A/μs 5 0 -5 0 50 100 150 200 250 IDSS, REVERSE LEAKAGE CURRENT (uA) 4 TIME (ns) 10 TJ = 125 oC 3 10 TJ = 100 oC 2 10 1 10 TJ = 25 oC 0 10 -1 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 13. SyncFET body diode reverse recovery characteristic Figure 14. SyncFET body diode reverse leakage versus drain-source voltage www.onsemi.com 6 30 FDMC7692S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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