FDMC8015L

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC8015L N-Channel Power Trench® MOSFET 40 V, 18 A, 26 mΩ Features General Description „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant Applications „ Load Switch „ Motor Bridge Switch Bottom Top 8 1 7 6 D D D D 5 D 5 4 G D 6 3 S D 7 2 S D 8 1 S G S S S 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 18 22 (Note 1a) 7 (Note 3) 32 -Pulsed A 30 Single Pulse Avalanche Energy EAS Ratings 40 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 24 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to + 150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 5.1 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8015L Device FDMC8015L ©2011 Fairchild Semiconductor Corporation FDMC8015L Rev.C1 Package Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8015L N-Channel PowerTrench® MOSFETTM October 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 40 V 36 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 7 A 19.7 26 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 6 A 24 36 VGS = 10 V, ID = 7 A, TJ = 125 °C 29 39 VDD = 5 V, ID = 7 A 30 gFS Forward Transconductance 1 1.8 -6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 710 945 pF 94 125 pF 58 90 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time 6.3 13 ns tr Rise Time 1.9 10 ns td(off) Turn-Off Delay Time 18 33 ns tf Fall Time 1.7 10 ns 13.6 19 nC 6.6 10 VDD = 20 V, ID = 7 A, VGS = 10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 4.5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 20 V, ID = 7 A nC 1.9 nC 2.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 7 A (Note 2) 0.84 1.2 VGS = 0 V, IS = 2 A (Note 2) 0.76 1.1 IF = 7 A, di/dt = 100 A/μs V 18 33 ns 8.6 18 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 36 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDMC8015L Rev. C1 2 www.fairchildsemi.com FDMC8015L N-Channel PowerTrench® MOSFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted 30 3.0 ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 4 V 20 VGS = 3.5 V 15 VGS = 3 V 10 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 25 2.5 VGS = 3 V 2.0 VGS = 3.5 V VGS = 4 V 1.5 1.0 0.5 2.5 0 5 10 Figure 1. On Region Characteristics 20 25 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 80 ID = 7 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 15 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 40 TJ = 125 oC 20 TJ = 25 oC 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 25 ID = 7 A 0 -50 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V VDS = 5 V 20 15 TJ = 150 oC 10 TJ = 25 oC 5 TJ = -55 oC 0 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 1 1.5 2.0 2.5 3.0 3.5 4.0 0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMC8015L Rev. C1 3 1.2 www.fairchildsemi.com FDMC8015L N-Channel PowerTrench® MOSFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = 7 A 1000 Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 VDD = 25 V VDD = 15 V 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 8 10 12 10 0.1 14 1 Figure 7. Gate Charge Characteristics 25 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 40 Figure 8. Capacitance vs Drain to Source Voltage 20 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 20 15 VGS = 10 V Limited by Package 10 VGS = 4.5 V 5 o RθJC = 5.1 C/W 1 0.01 0.1 1 10 0 25 20 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 10. Maximum Continuous Drain Current vs Case Temperature Figure 9. Unclamped Inductive Switching Capability 500 10 P(PK), PEAK TRANSIENT POWER (W) 50 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC o RθJA = 125 C/W TA = 25 oC 0.01 0.1 1 10 100 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC8015L Rev. C1 SINGLE PULSE RθJA = 125 oC/W 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8015L N-Channel PowerTrench® MOSFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMC8015L Rev. C1 5 www.fairchildsemi.com FDMC8015L N-Channel PowerTrench® MOSFETTM Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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