FDMC8032L

FDMC8032L Dual N-Channel PowerTrench) MOSFET 40 V, 7 A, 20 mW www.onsemi.com General Description This device includes two 40 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Features • • • • • • Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A Low Inductance Packaging Shortens Rise/Fall Times Lower Switching Losses 100% Rg Tested This Device is Pb−Free and is RoHS Compliant G1 G2 S1 S2 S1 S2 S1 S2 Pin 1 Applications Pin 1 D1 D2 MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V Drain Current − Continuous − Continuous − Pulsed 20 A EAS PD TC = 25°C TA = 25°C Single Pulse Avalanche Energy 7 (Note 1a) (Note 4) 50 (Note 3) 13 Power Dissipation TC = 25°C Power Dissipation TA = 25°C G2 S2 Ratings Units VDS ID S1S1 G1 S1 • Battery Protection • Load Switching • Point of Load TJ, TSTG Operating and Storage Junction Temperature Range Power 33 WDFN8 3x3, 0.65P CASE 511DG MARKING DIAGRAM mJ 12 (Note 1a) S2S2 $Y&Z&2&K FDMC 8032L W 1.9 −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. $Y &Z &2 &K FDMC8032L = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 February, 2019 − Rev. 4 1 Publication Order Number: FDMC8032L/D FDMC8032L THERMAL CHARACTERISTICS Rating Symbol Value Unit °C/W RθJC Thermal Resistance, Junction to Case 9.7 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDMC8032L FDMC8032L Power 33 13” 12 mm 3000 Units ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min. ID = 250 μA, VGS = 0 V 40 Typ. Max. Unit OFF CHARACTERISTICS BVDSS DBVDSS DTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25°C V 23 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 100 nA 3.0 V ON CHARACTERISTICS VGS(th) DVGS(th) DTJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 μA 1.0 ID = 250 μA, referenced to 25°C −5 VGS = 10 V, ID = 7 A 16 20 VGS = 4.5 V, ID = 6 A 21 27 23 29 Static Drain to Source On Resistance VGS = 10 V, ID = 7 A, TJ = 125°C gFS 1.8 Forward Transconductance mV/°C mW VDD = 5 V, ID = 7 A 27 S VDS = 20 V, VGS = 0 V f = 1 MHz 513 720 pF 137 195 pF 9.3 15 pF 2.6 3.6 W 5.5 11 ns 1.2 10 ns Turn−Off Delay Time 13 24 ns Fall Time 1.3 10 ns DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance 0.1 SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg(TOT) VDD = 20 V, ID = 7 A VGS = 10 V, RGEN = 6 W Turn−On Delay Time Rise Time Total Gate Charge VGS = 0 V to 10 V 7.6 11 nC Total Gate Charge VGS = 0 V to 4.5 V 3.6 5.1 nC VDD = 20 V ID = 7 A 1.5 nC 1.0 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge www.onsemi.com 2 FDMC8032L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued) Parameter Test Conditions Symbol Min. Typ. Max. Unit VGS = 0 V, IS = 7 A (Note 2) 0.85 1.3 V VGS = 0 V, IS = 1.4 A (Note 2) 0.75 1.2 16 29 ns 3.9 10 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 7 A, di/dt = 100 A/μs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a. 65°C/W when mounted on a 1 in2 pad of 2 oz copper b. 155°C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 13 mJ is based on starting TJ = 25°C, L = 3 mH, IAS = 3 A, VDD = 40 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 11 A. 4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area. www.onsemi.com 3 FDMC8032L ID, DRAIN CURRENT (A) 50 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS VGS = 10 V VGS = 6 V 40 VGS = 4.5 V 30 VGS = 4 V 20 10 0 VGS = 3.5 V 0 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 1 2 3 5 4 VGS = 3.5 V 3 VGS = 4 V 2 VGS = 4.5 V 1 0 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 ID = 7 A 60 40 TJ = 125oC 20 TJ = 25oC 0 2 4 6 8 10 Figure 4. On−Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX Figure 3. Normalized On−Resistance vs Junction Temperature PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX VDS = 5 V TJ = 150 oC 20 TJ = 25 oC 10 TJ = −55oC 1 80 VGS, GATE TO SOURCE VOLTAGE (V) 30 0 50 TJ, JUNCTION TEMPERATURE (°C) 50 40 40 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage ID = 7 A VGS = 10 V 1.4 30 VGS = 10 V ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics 1.6 20 VGS = 6 V 2 3 4 5 6 50 VGS = 0 V 10 TJ = 150oC 1 TJ = 25oC 0.1 TJ = −55oC 0.01 0.001 0.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 FDMC8032L TYPICAL CHARACTERISTICS (continued) 1000 VGS, GATE TO SOURCE VOLTAGE (V) ID = 7 A VDD = 15 V 8 VDD = 20 V 6 VDD = 25 V 4 Ciss 100 Coss 10 0 2 4 6 1 0.1 8 1 10 40 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 24 ID, DRAIN CURRENT (A) 20 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 20 16 VGS = 10 V 12 Limited by Package 8 VGS = 4.5 V 4 o 1 0.001 RqJC = 9.7 C/W 0.01 0.1 1 0 25 10 50 300 100 10 m s 10 100 m s 0.1 0.01 0.1 THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 10 ms DC RqJC = 9.7 oC/W TC = 25 oC 1 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature P(PK), PEAK TRANSIENT POWER (W) Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE (oC) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 2 0 IAS, AVALANCHE CURRENT (A) CAPACITANCE (pF) 10 CURVE BENT TO MEASURED DATA 10 100 2000 SINGLE PULSE 1000 o RqJC = 9.7 C/W o TC = 25 C 100 VDS, DRAIN to SOURCE VOLTAGE (V) 10 −5 10 −4 10 −3 10 −2 10 −1 10 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 FDMC8032L r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 −5 10 NOTES: ZqJC(t) = r(t) x RqJC SINGLE PULSE RqJC = 9.75C/W Peak TJ = PDM x Z qJC(t) + TC Duty Cycle, D = t1 / t2 −4 10 −3 −2 10 10 −1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3x3, 0.65P CASE 511DG ISSUE A DATE 12 FEB 2019 GENERIC MARKING DIAGRAM* XXXX AYWWG G XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13623G WDFN8 3x3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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