FDMC8200

Dual N-Channel PowerTrench® MOSFET 30 V, 10 mΩ, 20 mΩ General Description This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Features Q1: N-Channel „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Applications Q2: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A „ Mobile Computing „ Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A „ Mobile Internet Devices „ RoHS Compliant „ General Purpose Point of Load Bottom D1 Pin 1 G1 Bottom D1 V GHS IN D1 D1 S1 D2/ VIN E OD HN C T I GND GND GND S2 S2 Q2 5 VIN SW S2 G2 VIN 4 6 3 7 2 8 GLS 1 Q1 Power33 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C TJ, TSTG Units V ±20 ±20 V 18 13 TC = 25 °C 23 46 -Continuous TA = 25 °C 6 1a 8.5 1b 40 27 -Pulsed PD Q2 30 -Continuous (Silicon limited) Single Pulse Avalanche Energy EAS Q1 30 (Note 3) 12 32 Power Dissipation for Single Operation TA = 25°C 1.9 1a 2.5 1b Power Dissipation for Single Operation TA = 25°C 0.7 1c 1.0 1d Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient 65 1a 50 1b RθJA Thermal Resistance, Junction to Ambient 180 1c 125 1d RθJC Thermal Resistance, Junction to Case 7.5 4.2 °C/W Package Marking and Ordering Information Device Marking FDMC8200S Device FDMC8200S ©2011 Semiconductor Components Industries, LLC. October-2017,Rev.3 Package Power 33 Reel Size 13” Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC8200S/D FDMC8200S Dual N-Channel PowerTrench® MOSFET FDMC8200S Symbol Parameter Test Conditions Type Min 30 30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ID = 1mA, VGS = 0 V Q1 Q2 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25°C ID = 1mA, referenced to 25°C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Q1 Q2 1 500 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V Q1 Q2 100 100 nA nA 3.0 3.0 V V 14 13 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA VGS = VDS, ID = 1mA Q1 Q2 ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25°C ID = 1mA, referenced to 25°C Q1 Q2 -5 -6 VGS = 10 V, ID = 6 A VGS = 4.5 V, ID = 5 A VGS = 10 V, ID = 6 A, TJ = 125°C Q1 16 24 22 20 32 28 VGS = 10 V, ID = 8.5 A VGS = 4.5 V, ID = 7.2 A VGS = 10 V, ID = 8.5 A, TJ = 125°C Q2 7.8 10.3 11.4 10.0 13.5 13.1 VDD = 5 V, ID = 6 A VDD = 5 V, ID = 8.5 A Q1 Q2 29 43 Q1 Q2 495 1080 660 1436 pF Q1 Q2 145 373 195 495 pF 20 35 30 52 pF 1.4 1.2 4.2 3.6 Ω Q1 Q2 11 7.6 20 15 ns Q1 Q2 3.1 1.8 10 10 ns Q1 Q2 35 21 56 34 ns Q1 Q2 1.3 8.5 10 17 ns Q1 Q2 7.3 15.7 10 22 nC Q1 Q2 3.1 7.2 4.3 10 nC Q1 Q2 1.8 3 nC Q1 Q2 1 1.9 nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 1.0 2.3 2.0 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q1 Q2 Rg Gate Resistance Q1 Q2 VDS = 15 V, VGS = 0 V, f = 1 MHZ 0.2 0.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge Q1 VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω Q2 VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V Q1 VDD = 15 V, VGS = 0 V to 4.5 V ID = 6 A Q2 VDD = 15 V ID = 8.5 A www.onsemi.com 2 FDMC8200S Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 Q2 0.8 0.8 0.6 1.2 1.2 0.8 V Q1 Q2 13 20 24 32 ns Q1 Q2 2.3 15 10 24 nC Drain-Source Diode Characteristics VSD VGS = 0 V, IS = 6 A Source-Drain Diode Forward Voltage VGS = 0 V, IS = 8.5 A VGS = 0 V, IS = 1.3 A trr Reverse Recovery Time Qrr Reverse Recovery Charge (Note 2) (Note 2) (Note 2) Q1 IF = 6 A, di/dt = 100 A/s Q2 IF = 8.5 A, di/dt = 300 A/s Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.65 °C/W when mounted on a 1 in2 pad of 2 oz copper b.50 °C/W when mounted on a 1 in2 pad of 2 oz copper c. 180 °C/W when mounted on a minimum pad of 2 oz copper d. 125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3.Starting Q1: T = 25 °C, L = 1 mH, I = 5 A, Vgs = 10V, Vdd = 27V, 100% test at L = 3 mH, I = 4 A; Q2: T = 25°C, L = 1 mH, I = 8 A, Vgs = 10V, Vdd = 27V, 100% test at L = 3 mH, I = 3.2 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. www.onsemi.com 3 FDMC8200S Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4 40 ID, DRAIN CURRENT (A) VGS = 6 V 30 VGS = 4.5 V 20 VGS = 4 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 3 VGS = 3.5 V VGS = 4 V 2 VGS = 4.5 V 1 0 0 3.0 10 Figure 1. On Region Characteristics 30 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 100 1.6 ID = 6 A VGS = 10 V rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 80 ID = 6 A 60 TJ = 125 oC 40 20 TJ = 25 oC 0 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V 30 VDS = 5 V 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 2.0 2.5 3.0 3.5 4.0 4.5 VGS = 0 V 10 1 TJ = 150 oC 0.1 TJ = 25 oC 0.01 0.001 0.2 VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55 oC 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.2 FDMC8200S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 1000 ID = 6 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V VDD = 15 V 6 VDD = 10 V 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 10 0.1 8 1 30 Figure 8. Capacitance vs Drain to Source Voltage 25 8 7 6 5 o RθJC = 7.5 C/W ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Figure 7. Gate Charge Characteristics 4 TJ = 25 oC 3 TJ = 100 oC 2 TJ = 125 oC 1 0.01 0.1 1 20 VGS = 10 V 15 Limited by Package 10 VGS = 4.5 V 5 0 25 7 50 tAV, TIME IN AVALANCHE (ms) 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 50 100 100 usus 1 ms 1 1 ms 1 10 ms THIS AREA ISIS THIS AREA LIMITED BY rDS(on) LIMITED BY r 10100 ms ms SINGLE PULSE SINGLE PULSE TJ = MAX RATED TJ = MAX RATED 1 s10 s DS(on) 0.1 0.1 0.01 oR θJA = C/W 1 sms 100 DC 10 s DC 125 oC/W RθJA = 180 o TC = 25 oC TA = 25 C 0.01 0.1 0.1 1 1 10 10 VDS, DRAIN to SOURCE VOLTAGE (V) 100200 100200 P(PK), PEAK TRANSIENT POWER (W) 100 10 10 0.01 0.001 0.01 75 Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability , DRAINCURRENT CURRENT (A) (A) IDI,DDRAIN 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) VGS = 10 V 10 1 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 0.1 0.001 0.01 0.1 1 10 100 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1000 FDMC8200S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE 0.01 o RθJA = 180 C/W 0.003 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 6 100 1000 FDMC8200S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 4 VGS = 10 V VGS = 4.5 V VGS = 4 V VGS = 3.5 V 18 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 27 VGS = 3 V 9 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 3 VGS = 3.5 V 2 VGS = 4 V 1 1.5 0 9 18 27 ID, DRAIN CURRENT (A) Figure 14. On- Region Characteristics Figure 15. Normalized on-Resistance vs Drain Current and Gate Voltage 1.6 100 ID = 8.5 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 4.5 V VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 8.5 A 80 60 40 TJ = 125 oC 20 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 17. On-Resistance vs Gate to Source Voltage Figure 16. Normalized On-Resistance vs Junction Temperature 30 IS, REVERSE DRAIN CURRENT (A) 27 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V VDS = 5 V 18 TJ = 150 oC TJ 9 = 25 oC TJ = -55 oC 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 7 1.2 FDMC8200S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted 3000 ID = 8.5 A 1000 8 VDD = 15 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 20 V 4 Ciss Coss 100 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 2 4 6 8 10 12 14 16 10 30 Figure 21. Capacitance vs Drain to Source Voltage Figure 20. Gate Charge Characteristics 15 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 12 VGS = 10 V 9 VGS = 4.5 V 6 Limited by package 3 o RθJA = 50 C/W 1 0.01 0.1 1 10 0 25 30 50 125 150 Figure 23. Maximum Continuous Drain Current vs Case Temperature 100 10 100 us 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10 s RθJA = 125 oC/W DC TA = 25 oC 0.1 1 10 100200 P(PK), PEAK TRANSIENT POWER (W) 50 0.01 0.01 100 o Figure 22. Unclamped Inductive Switching Capability 1 75 TA, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss VGS = 10 V 10 1 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 0.1 0.001 Figure 24. Forward Bias Safe Operating Area 0.01 0.1 1 10 100 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 25. Single Pulse Maximum Power Dissipation www.onsemi.com 8 1000 FDMC8200S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJA = 125 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 26. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 9 100 1000 FDMC8200S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMC8200S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 7 6 CURRENT (A) 5 4 di/dt = 300 A/μs 3 2 1 0 -1 -2 0 20 40 60 80 100 IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TJ = 125 oC 0.001 0.00001 TJ = 25 oC 0.000001 0 TIME (ns) Figure 27. FDMC8200S SyncFET body diode reverse recovery characteristic TJ = 100 oC 0.0001 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 28. SyncFET body diode reverses leakage versus drain-source voltage www.onsemi.com 10 30 FDMC8200S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (continued) FDMC8200S Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout www.onsemi.com 11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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