FDMC8321LDC

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel Dual CoolTM 33 PowerTrench® MOSFET 40 V, 108 A, 2.5 mΩ Features General Description „ High performance technology for extremely low rDS(on) This N-Channel MOSFET is produced using ON process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. „ RoHS Compliant Applications „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A „ Primary DC-DC Switch „ Motor Bridge Switch „ Synchronous Rectifier Pin 1 S S S G D Dual CoolTM 33 Top D D D S D S D S D G D Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TC = 25 °C -Continuous TA = 25 °C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings 40 Units V ±20 V 108 (Note 1a) 27 (Note 4) 320 (Note 3) 181 A mJ 56 (Note 1a) Operating and Storage Junction Temperature Range W 2.9 -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 2.2 (Note 1a) 42 °C/W Package Marking and Ordering Information Device Marking 8321LD Device FDMC8321LDC ©2014 Semiconductor Components Industries, LLC. August-2017, Rev.2 Package Dual CoolTM 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC8321LDC/D FDMC8321LDC N-Channel Dual CoolTM 33 PowerTrench® MOSFET FDMC8321LDC RθJC Thermal Resistance, Junction to Case (Top Source) 5.0 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.2 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 29 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 40 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 30 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 79 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 16 °C/W Notes: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 105 °C/W when mounted on a minimum pad of 2 oz copper a. 42 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 181 mJ is based on starting TJ = 25 oC, L = 3 mH, IAS = 11 A, VDD = 40 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 35 A. 4. Pulse Id measured at 250μs, refer to Fig 11 SOA graph for more details. www.onsemi.com 2 FDMC8321LDC N-Channel Dual CoolTM 33 PowerTrench® MOSFET Thermal Characteristics Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 40 V 39 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.7 -6 mV/°C VGS = 10 V, ID = 27 A 2.0 2.5 VGS = 4.5 V, ID = 21 A 2.8 4.1 VGS = 10 V, ID = 27 A, TJ = 125 °C 3.0 3.8 VDS = 5 V, ID = 27 A 126 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 0.1 2832 3965 pF 777 1090 pF 66 105 pF 0.7 2.5 Ω ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 4.8 10 ns Qg(TOT) Total Gate Charge at 10 V 43 60 nC 22 31 Qg(TOT) Total Gate Charge at 5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 20 V, ID = 27 A, VGS = 10 V, RGEN = 6 Ω VDD = 20 V, ID = 27 A 13 23 5.5 11 ns 31 50 ns nC 7.1 nC 6.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.3 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 27 A (Note 2) 0.8 1.3 IF = 27 A, di/dt = 100 A/μs www.onsemi.com 3 V 31 50 ns 11 20 nC FDMC8321LDC N-Channel Dual CoolTM 33 PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 320 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V 240 VGS = 4.5 V VGS = 4 V 160 VGS = 3.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 80 VGS = 3 V 0 0 1 2 3 4 5 VGS = 3 V 4 VGS = 3.5 V 3 VGS = 4 V 2 VGS = 4.5 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 80 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.0 0.8 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 1.4 0.6 -75 2 TJ = 25 oC 1 2 3 2 4 5 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) oC TJ = -55 oC 0 TJ = 25 oC 400 160 80 TJ = 125 oC 4 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V TJ = 150 ID = 27 A 6 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 240 320 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 8 Figure 3. Normalized On Resistance vs Junction Temperature 320 240 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 27 A VGS = 10 V 1.6 160 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.8 VGS = 10 V 6 VGS = 0 V 100 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.2 FDMC8321LDC N-Channel Dual CoolTM 33 PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 27 A Ciss VDD = 16 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 VDD = 24 V 4 1000 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 10 0.1 50 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 100 120 o TJ = 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 2.2 C/W 25 oC TJ = 100 oC TJ = 125 oC 1 0.01 0.1 100 80 VGS = 10 V 60 Limited by Package 20 1 10 0 25 100 50 75 100 125 150 o tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 10 us P(PK), PEAK TRANSIENT POWER (W) 10000 600 ID, DRAIN CURRENT (A) VGS = 4.5 V 40 SINGLE PULSE RθJC = 2.2 oC/W TC = 25 oC 1000 10 1 1 ms 10 ms DC SINGLE PULSE TJ = MAX RATED RθJC = 2.2 oC/W 0.1 0.1 100 us THIS AREA IS LIMITED BY rDS(on) CURVE BENT TO MEASURED DATA TC = 25 oC 1 10 100 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 FDMC8321LDC N-Channel Dual CoolTM 33 PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 0.005 -5 10 DUTY CYCLE-DESCENDING ORDER PDM D = 0.5 0.2 0.1 0.05 0.02 0.01 t1 t2 NOTES: ZθJC(t) = r(t) x RθJC RθJC = 2.2 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE -4 10 -3 10 -2 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 6 -1 10 1 FDMC8321LDC N-Channel Dual CoolTM 33 PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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