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FDMC8554
N-Channel Power Trench® MOSFET
20V, 16.5A, 5mΩ
Features
General Description
Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s
advanced
Power
Trench
process. It has been optimized for power management
applications.
Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A
Low Profile - 1mm max in Power 33
RoHS Compliant
Application
DC - DC Conversion
Bottom
Top
Pin 1
S
S
G
S
D
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25°C
-Continuous
TA = 25°C
ID
TJ, TSTG
Units
V
±20
V
16.5
(Note 1a)
-Pulsed
PD
Ratings
20
16.5
A
36
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
41
(Note 1a)
Operating and Storage Junction Temperature Range
2.0
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
3
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
60
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8554
Device
FDMC8554
©2007 Fairchild Semiconductor Corporation
FDMC8554 Rev.C2
Package
Power 33
1
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
FDMC8554 N-Channel PowerTrench® MOSFET
June 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
20
ID = 250μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
V
15.7
mV/°C
VDS = 16V,
VGS = 0V
1
TJ = 125°C
100
VGS = ±20V, VDS = 0V
μA
±100
nA
3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
rDS(on)
Drain to Source On Resistance
gFS
Forward Transconductance
1.0
1.8
-6.1
mV/°C
VGS = 10V, ID = 16.5A
3.6
5.0
VGS = 4.5V, ID = 14A
4.6
6.4
VGS = 10V, ID = 16.5A, TJ = 125°C
5.4
7.1
VDS = 5V, ID = 16.5A
62
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 10V, VGS = 0V,
f = 1MHz
f = 1MHz
2540
3380
pF
795
1060
pF
510
765
pF
Ω
1.2
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
7
14
ns
Qg(TOT)
Total Gate Charge at 10V
44
62
nC
Qg(TOT)
Total Gate Charge at 4.5V
24
34
Qgs
Gate to Source Gate Charge
8.5
nC
Qgd
Gate to Drain “Miller” Charge
10
nC
VDD = 10V, ID = 16.5A
VGS = 10V, RGEN = 6Ω
VDD = 10V, ID = 16.5A
13
24
10
20
ns
ns
32
51
ns
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 16.5A
(Note 2)
IF = 16.5A, di/dt = 100A/μs
0.8
1.3
V
31
47
ns
22
33
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
FDMC8554 Rev.C2
2
www.fairchildsemi.com
FDMC8554 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
3
VGS = 4.5V
VGS =5V
150
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
200
VGS = 10V
VGS = 4V
100
VGS = 3.5V
50
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
VGS = 5V
VGS =4.5V
1
VGS = 10V
0
0
50
100
150
ID, DRAIN CURRENT(A)
200
20
1.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1.4
1.2
1.0
ID = 16.5A
VGS = 10V
0.8
0.6
-75
ID = 16.5A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
15
10
TJ = 125oC
5
TJ = 25oC
0
-50
3
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
100
IS, REVERSE DRAIN CURRENT (A)
100
ID, DRAIN CURRENT (A)
VGS = 4V
2
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On-Region Characteristics
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 3.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
75
VDD = 5V
TJ = 150oC
50
25
TJ = 25oC
TJ = -55oC
0
0
1
2
3
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics
FDMC8554 Rev.C2
VGS = 0V
10
TJ = 150oC
1
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC8554 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC8554 N-Channel PowerTrench® MOSFET
10
5000
ID = 16.5A
Ciss
VDD = 5V
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
Typical Characteristics TJ = 25°C unless otherwise noted
VDD = 10V
6
4
VDD = 15V
2
Coss
1000
10
20
30
Qg, GATE CHARGE(nC)
40
f = 1MHz
VGS = 0V
100
0.1
0
0
Crss
50
Figure 7. Gate Charge Characteristics
80
ID, DRAIN CURRENT (A)
TJ = 25oC
10
TJ = 125oC
60
VGS = 10V
40
Limited by Package
VGS = 4.5V
20
o
RθJC = 3 C/W
1
-2
10
0
-1
10
0
1
10
10
2
3
10
25
10
50
P(PK), PEAK TRANSIENT POWER (W)
rDS(on)LIMITED
10
1ms
10ms
1
100ms
1s
10s
DC
TA = 25OC
0.01
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
150
300
VGS = 10V
100
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 – T
A
-----------------------125
10
SINGLE PULSE
1
R
O
=135 C
θJA
0.5
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
FDMC8554 Rev.C2
125
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
100
SINGLE PULSE
TJ = MAX RATED
RθJA=135OC
100
o
Figure 9. Unclamped Inductive
Switching Capability
0.1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
ID, DRAIN CURRENT (A)
20
Figure 8. Capacitance vs Drain
to Source Voltage
40
IAS, AVALANCHE CURRENT(A)
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
www.fairchildsemi.com
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 135 C/W
0.002
-3
10
-2
10
-1
0
1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
2
10
3
10
Figure 13. Transient Thermal Response Curve
FDMC8554 Rev.C2
5
www.fairchildsemi.com
FDMC8554 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC8554 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEU-C08
FDMC8554 Rev.C2
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
FDMC8554 Rev.C2
7
www.fairchildsemi.com
FDMC8554 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
®*
®
AX-CAP®*
FRFET®
BitSiC™
Global Power ResourceSM
PowerTrench®
TinyBoost®
Build it Now™
GreenBridge™
PowerXS™
TinyBuck®
CorePLUS™
Green FPS™
Programmable Active Droop™
TinyCalc™
CorePOWER™
Green FPS™ e-Series™
QFET®
TinyLogic®
QS™
CROSSVOLT™
Gmax™
TINYOPTO™
Quiet Series™
CTL™
GTO™
TinyPower™
RapidConfigure™
Current Transfer Logic™
IntelliMAX™
TinyPWM™
DEUXPEED®
ISOPLANAR™
™
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder
TranSiC™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TriFault Detect™
EfficentMax™
SignalWise™
MegaBuck™
TRUECURRENT®*
ESBC™
SmartMax™
MICROCOUPLER™
μSerDes™
SMART
START™
MicroFET™
®
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
UHC®
STEALTH™
MillerDrive™
Fairchild Semiconductor®
Ultra FRFET™
SuperFET®
MotionMax™
FACT Quiet Series™
SuperSOT™-3
UniFET™
mWSaver®
FACT®
OptoHiT™
SuperSOT™-6
VCX™
FAST®
OPTOLOGIC®
SuperSOT™-8
VisualMax™
FastvCore™
OPTOPLANAR®
SupreMOS®
VoltagePlus™
FETBench™
SyncFET™
XS™
FPS™
Sync-Lock™
仙童 ™
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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