Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDMD8240L
Dual N-Channel Power Trench® MOSFET
40 V, 98 A, 2.6 mΩ
Features
General Description
Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 23 A
This device includes two 40V N-Channel MOSFETs in a dual
Power (3.3 mm X 5 mm) package. HS source and LS Drain are
internally connected for half/full bridge, low source inductance
package, low rDS(on)/Qg FOM silicon.
Max rDS(on) = 3.95 mΩ at VGS = 4.5 V, ID = 19 A
Ideal for Flexible Layout in Primary Side of Bridge Topology
100% UIL Tested
Applications
Kelvin High Side MOSFET Drive Pin-out Capability
Synchronous Buck : Primary Switch of Half / Full Bridge
Converter for Telecom
Termination is Lead-free and RoHS Compliant
Motor Bridge : Primary Switch of Half / Full bridge Converter
for BLDC Motor
MV POL: Synchronous Buck Switch
Pin 1
Pin 1
D1
1
12 G1
D1
2
11
D1
3
10 D2/S1
G2
4
9
D2/S1
S2
5
8
D2/S1
S2
6
7
D2/S1
G1R
Power 3.3 x 5
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
TJ, TSTG
±20
V
TC = 25 °C
-Continuous
TC = 100 °C
(Note 5)
62
-Continuous
TA = 25 °C
(Note 1a)
23
-Pulsed
PD
Units
V
-Continuous
Single Pulse Avalanche Energy
EAS
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
(Note 5)
Ratings
40
98
(Note 4)
464
(Note 3)
216
42
(Note 1a)
Operating and Storage Junction Temperature Range
2.1
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
3.0
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
60
°C/W
Package Marking and Ordering Information
Device Marking
8240L
Device
FDMD8240L
©2016 Fairchild Semiconductor Corporation
FDMD8240L Rev.1.0
Package
Power 3.3 x 5
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMD8240L Dual N-Channel PowerTrench® MOSFET
January 2016
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3.0
V
40
V
23
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 23 A
2.0
2.6
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 19 A
3.2
3.95
VGS = 10 V, ID = 23 A, TJ = 125 °C
3.0
3.9
VDD = 5 V, ID = 23 A
107
gFS
Forward Transconductance
1.0
2.0
-6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20 V, VGS = 0 V
f = 1 MHz
0.1
3020
4230
pF
876
1230
pF
33
52
pF
2.8
6
Ω
12
22
ns
8
16
ns
36
58
ns
9
18
ns
40
56
nC
21
30
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 20 V, ID = 23 A
VGS = 10 V, RGEN = 6 Ω
Total Gate Charge
VGS = 0 V to 10 V
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 20 V
ID = 23 A
nC
9
nC
5
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 23 A
(Note 2)
0.8
1.3
VGS = 0 V, IS = 1.6 A
(Note 2)
0.7
1.2
IF = 23 A, di/dt = 100 A/μs
V
41
65
ns
21
32
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 130 °C/W when mounted on
a minimum pad of 2 oz copper
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 216 mJ is based on starting TJ = 25 oC, L = 3 mH, IAS = 12 A, VDD = 40 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 37 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2016 Fairchild Semiconductor Corporation
FDMD8240L Rev.1.0
2
www.fairchildsemi.com
FDMD8240L Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
6
VGS = 10 V
VGS = 6 V
120
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
150
VGS = 4 V
VGS = 4.5 V
90
60
VGS = 3.5 V
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.3
0.6
0.9
1.2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
4
VGS = 4 V
VGS = 4.5 V
2
1.5
0
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.2
1.1
1.0
0.9
0.8
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.3
ID = 23 A
10
5
100 125 150
TJ = 125 oC
TJ = 25 oC
0
2
ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VDS = 5 V
90
60
TJ = 25 oC
30
TJ = -55 oC
1
2
3
4
4
5
6
7
8
9
200
100
10
VGS = 0 V
1
0.01
TJ = -55 oC
0.001
0.0
5
TJ = 25 oC
TJ = 150 oC
0.1
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2016 Fairchild Semiconductor Corporation
FDMD8240L Rev.1.0
10
Figure 4. On Resistance vs. Gate to
Source Voltage
150
TJ = 150 oC
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
0
150
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ, JUNCTION TEMPERATURE (oC)
120
120
15
ID = 23 A
VGS = 10 V
1.4
0.7
-75
90
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
60
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
1.6
VGS = 10 V
VGS = 6 V
0
3
1.2
www.fairchildsemi.com
FDMD8240L Dual N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
VGS, GATE TO SOURCE VOLTAGE (V)
10
10000
Ciss
ID = 23 A
8
CAPACITANCE (pF)
6
VDD = 15 V
VDD = 20 V
4
VDD = 25 V
2
0
0
10
20
30
1000
40
Coss
100
Crss
10
f = 1 MHz
VGS = 0 V
1
0.1
50
Figure 7. Gate Charge Characteristics
40
100
ID, DRAIN CURRENT (A)
10
TJ = 25 oC
TJ = 125
oC
TJ = 100 oC
80
VGS = 10 V
60
40
VGS = 4.5 V
20
o
RθJC = 3.0 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
75
100
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
10000
100
10 μs
SINGLE PULSE
RθJC = 3.0 oC/W
TC = 25 oC
1000
1
THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.0 oC/W
0.1
0.1
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
10
125
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs. Drain
to Source Voltage
100
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1 ms
10 ms
CURVE BENT TO
MEASURED DATA
TC = 25 oC
1
10
100 ms/DC
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2016 Fairchild Semiconductor Corporation
FDMD8240L Rev.1.0
100
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMD8240L Dual N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
0.01
ZθJC(t) = r(t) x RθJC
RθJC = 3.0oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDMD8240L Rev.1.0
5
www.fairchildsemi.com
FDMD8240L Dual N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
0.10 C
B
5.10
4.90
2X
6
KEEP-OUT
AREA
A
1
2.35
0.42 (12X)
0.65
6
1
0.42
0.79 (12X)
3.40
3.20
3.70
PIN#1
INDICATOR
7
1.44
0.72
0.10 C
12
0.26
7
12
0.43
SEE
DETAIL 'A'
3.67
4.70
5.10
LAND PATTERN
RECOMMENDATION
5.00±0.10
0.10
0.05
4.60±0.10
C A B
C
0.72
7
12
R0.15
0.36
0.20
3.30±0.10
1.34±0.10
0.52
0.64
0.44
6
1
(12X)
0.37 (12X)
0.27
0.65
0.53
NOTES: UNLESS OTHERWISE SPECIFIED
A) DOES NOT FULLY CONFORM TO JEDEC
REGISTRATION, MO-229 DATED 8/2012
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS OR
MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
0.80
0.70
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
0.10 C
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
0.08 C
C
0.25
0.15
0.05
0.00
SCALE: 2:1
F) DRAWING FILE NAME:
SEATING
PLANE
MKT-PQFN12BREV1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com