FDMD8430

FDMD8430 Dual N-Channel PowerTrench) MOSFET 30 V, 28 A, 2.12 mW General Description www.onsemi.com This package integrates two N−Channel devices connected internally in common−source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density. Top Features • Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A • Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A • Ideal for Flexible Layout in Secondary Side Synchronous • • Pin 1 Rectification 100% UIL Tested Termination is Lead−free and RoHS Compliant Bottom D2 D2 D2 G2 Applications • Isolated DC−DC Synchronous Rectifiers • Common Ground Load Switches Pin 1 S1/S2 G1 D1 D1 D1 PQFN8 PowerTrench CASE 483AU G1 1 8 D2 D1 2 7 D2 D1 3 6 D2 D1 4 5 G2 S1,S2 to backside ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 April, 2018 − Rev. 0 1 Publication Order Number: FDMD8430/D FDMD8430 Table 1. MOSFET MAXIMUM RATINGS TA = 25°C unless otherwise noted. Parameter Symbol Rating Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V TC = 25°C (Note 1) 95 A Drain Current − Continuous TC = 100°C (Note 1) 60 Drain Current − Continuous TA = 25°C (Figure 1) 28 Drain Current − Pulsed (Note 2) 562 EAS Single Pulse Avalanche Energy (Note 3) 96 mJ PD Power Dissipation TC = 25°C 29 W Power Dissipation TA = 25°C (Figure 1) 2.1 ID TJ, TSTG Drain Current −Continuous Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro− mechanical application board design. 2. Pulse Id refers to Figure 13 Forward Bias Safe Operating Area. 3. EAS of 96 mJ is based on starting TJ = 25°C; L = 0.3 mH, IAS = 31.7 A, VDD = 27 V. b.160 °C/W when mounted on a minimum pad of 2 oz copper a. 60 °C/W when mounted on a 12in pad of 2 oz copper SS SF DS DF G SS SF DS DF G Figure 1. Figure 2. Table 2. THERMAL CHARACTERISTICS RqJC Thermal Resistance, Junction to Case RqJA Thermal Resistance, Junction to Ambient 4. RqJA is determined with the device mounted on a 1 by the user’s board design. in2 4.7 (Figure 1) °C/W 60 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material, RqCA is determined Table 3. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDMD8430 FDMD8430 Power 3.3 x 5 13″ 12 mm 3000 units www.onsemi.com 2 FDMD8430 Table 4. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted. Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V BVDSS 30 V 17 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DVGS(th) / DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C −5 Static Drain to Source On Resistance VGS = 10 V, ID = 28 A 1.5 2.12 VGS = 4.5 V, ID = 24 A 2.0 2.95 VGS = 10 V, ID = 28 A, TJ = 125°C 1.7 2.4 rDS(on) gFS Forward Transconductance 1.0 1.6 VDD = 5 V, ID = 28 A mV/°C mW 250 S 3595 5035 pF DYNAMIC CHARACTERISTICS VDS = 15 V, VGS = 0 V, f = 1 MHZ Ciss Input Capacitance Coss Output Capacitance 1150 1610 pF Crss Reverse Transfer Capacitance 112 160 pF Gate Resistance 2.3 4.5 W 11 20 ns 8 16 ns Turn−Off Delay Time 71 114 ns Fall Time 20 36 ns 52 90 nC 25 45 nC Rg SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg(tot) Turn−On Delay Time Rise Time VDD = 15 V, ID = 28 A, VGS = 10 V, RGEN = 6 W Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 28 A Qgs Gate to Source Charge 10 nC Qgd Gate to Drain “Miller” Charge 7 nC DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Forward Voltage VGS = 0 V, IS = 28 A (Note 5) 0.8 1.2 V trr Reverse Recovery Time IF = 28 A, di/dt = 100 A/ms 40 64 ns Qrr Reverse Recovery Charge 22 36 nC VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. www.onsemi.com 3 FDMD8430 TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted. VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 4 V 105 VGS = 3.5 V 70 35 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX VGS = 3 V 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 130 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 5 VGS = 3 V 4 VGS = 3.5 V 3 VGS = 4 V 2 1 0 2.0 VGS = 4.5 V VGS = 6 V 0 26 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 28 ID = 28 A VGS = 10 V 0.7 −75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 28 A 20 16 12 8 TJ = 125 oC 4 0 TJ = 25 0 2 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX VDS = 5 V TJ = 150 oC TJ = 25 oC 26 TJ = −55 oC 0 1 2 3 4 4 6 8 10 Figure 6. On−Resistance vs. Gate to Source Voltage 78 0 oC VGS, GATE TO SOURCE VOLTAGE (V) 130 52 130 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 24 Figure 5. Normalized On−Resistance vs. Junction Temperature 104 104 Figure 4. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.6 1.4 78 ID, DRAIN CURRENT (A) Figure 3. On Region Characteristics 1.5 52 VGS = 10 V 130 100 VGS = 0 V 10 1 TJ = 25 oC 0.1 0.01 0.001 5 TJ = 150 oC TJ = −55 oC 0.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 FDMD8430 TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted. VGS, GATE TO SOURCE VOLTAGE (V) 10 10000 Ciss ID = 28 A 8 6 CAPACITANCE (pF) VDD = 10 V VDD = 15 V 4 VDD = 20 V 1000 100 2 0 Coss Crss f = 1 MHz VGS = 0 V 0 12 24 36 48 10 60 0.1 Figure 9. Gate Charge Characteristics 30 100 ID, DRAIN CURRENT (A) VGS = 10 V TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 80 60 VGS = 4.5 V 40 20 o 1 0.001 RqJC = 4.7 C/W 0.01 0.1 1 10 100 0 25 1000 50 P(PK), PEAK TRANSIENT POWER (W) 10000 10 m s 100 100 m s THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED RqJC = 4.7 oC/W 10 ms CURVE BENT TO MEASURED DATA o 0.1 0.1 125 TC = 25 C 1 150 Figure 12. Maximum Continuous Drain Current vs. Case Temperature 1000 1 100 TC, CASE TEMPERATURE ( C) Figure 11. Unclamped Inductive Switching Capability 10 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 10. Capacitance vs. Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 ms 10 100 SINGLE PULSE RqJC = 4.7 oC/W TC = 25 oC 1000 100 10 −5 10 VDS, DRAIN to SOURCE VOLTAGE (V) −4 10 −3 10 −2 10 −1 10 1 t, PULSE WIDTH (sec) Figure 13. Forward Bias Safe Operating Area Figure 14. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDMD8430 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted. 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 0.001 −5 10 ZqJC(t) = r(t) x RqJC RqJC = 4.7 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 15. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 6 −1 10 1 FDMD8430 PACKAGE DIMENSIONS PQFN8 3.3X5, 0.65P CASE 483AU ISSUE O B KEEP OUT AREA 2X A 2X LAND PATTERN RECOMMENDATION SEE DETAIL A C SCALE: 2X www.onsemi.com 7 FDMD8430 PowerTrench is a registered trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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