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FDMD8530
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 201 A, 1.25 mΩ Q2: 30 V, 201 A, 1.25 mΩ
Features
General Description
Q1: N-Channel
This device includes two 30V N-Channel MOSFETs in a dual
power (5 mm X 6 mm) package. HS source and LS drain
internally connected for half/full bridge, low source inductance
package, low rDS(on)/Qg FOM silicon.
Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 35 A
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 32 A
Q2: N-Channel
Applications
Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 35 A
POL Synchronous Dual
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 32 A
One Phase Motor Half Bridge
Ideal for Flexible Layout in Primary Side of Bridge Topology
Half/Full Bridge Secondary Synchronous Rectification
100% UIL Tested
Kelvin High Side MOSFET Drive Pin-out Capability
RoHS Compliant
Bottom
Top
D2/S1
D2/S1
D2/S1
G2
S2
Pin 1
D1
D1
D1
GR
G1
G2
GR
D2/S1
D1
D2/S1
D1
D2/S1
Pin 1
G1
Power 5 x 6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
Q1
30
-Continuous
Drain Current
TC = 25 °C
(Note 5)
-Continuous
TC = 100 °C
(Note 5)
-Continuous
TA = 25 °C
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Q2
30
Units
V
±20
±20
V
201
201
127
127
351a
351b
(Note 4)
1047
1047
(Note 3)
661
661
78
78
2.21a
2.21b
Operating and Storage Junction Temperature Range
A
mJ
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
1.6
1.6
551a
55 1b
°C/W
Package Marking and Ordering Information
Device Marking
FDMD8530
Device
FDMD8530
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
Package
Power 5 x 6
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
October 2015
Symbol
Parameter
Test Conditions
Type
Min.
30
30
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
Q1
Q2
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
Q1
Q2
1
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
Q1
Q2
±100
±100
nA
3.0
3.0
V
V
20
20
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
Q1
Q2
1.0
1.0
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
Q1
Q2
-5
-5
0.77
1.25
Q1
0.96
1.5
VGS = 10 V, ID = 35 A
VGS = 4.5 V, ID = 32 A
rDS(on)
Static Drain to Source On Resistance
1.1
1.8
VGS = 10 V, ID = 35 A
0.77
1.25
0.96
1.5
1.1
1.8
VGS = 4.5 V, ID = 32 A
Forward Transconductance
mV/°C
VGS = 10 V, ID = 35 A, TJ = 125 °C
Q2
VGS = 10 V, ID = 35 A, TJ = 125 °C
gFS
1.5
1.5
VDD = 5 V, ID = 35 A
mΩ
Q1
Q2
259
259
Q1
Q2
7425
7425
10395
10395
pF
Q1
Q2
2190
2190
3070
3070
pF
220
220
310
310
pF
1.9
1.9
3.8
3.8
Ω
Q1
Q2
14
14
25
25
ns
Q1
Q2
13
13
24
24
ns
Q1
Q2
71
71
114
114
ns
Q1
Q2
21
21
34
34
ns
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Q1
Q2
Rg
Gate Resistance
Q1
Q2
VDS = 15 V, VGS = 0 V
f = 1 MHz
0.1
0.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
Q1
Q2
106
106
149
149
nC
Qg(TOT)
Total Gate Charge
VGS = 0 V to 4.5 V
Q1
Q2
50
50
70
70
nC
Q1
Q2
16
16
nC
Q1
Q2
13
13
nC
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
VDD = 15 V, ID = 35 A
VGS = 10 V, RGEN = 6 Ω
VDD = 15 V,
ID =35 A
2
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 35 A
(Note 2)
Q1
Q2
0.8
0.8
1.3
1.3
V
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A
(Note 2)
Q1
Q2
0.7
0.7
1.2
1.2
V
trr
Reverse Recovery Time
Q1
Q2
54
54
87
87
ns
Q1
Q2
39
39
63
63
nC
IF = 35 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
a. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
c. 155 °C/W when mounted on
a minimum pad of 2 oz copper
d. 155 °C/W when mounted on
a minimum pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Q1: EAS of 661 mJ is based on starting TJ = 25 oC, L = 3 mH, IAS = 21 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 65 A.
Q2: EAS of 661 mJ is based on starting TJ = 25 oC, L = 3 mH, IAS = 21 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 65 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
3
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
20
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
VGS = 10 V
VGS = 4.5 V
90
VGS = 3.5 V
60
VGS = 3 V
VGS = 2.5 V
30
0
0.0
0.2
0.4
0.6
0.8
15
10
5
0
1.0
0
30
120
150
5
ID = 35 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
90
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
ID = 35 A
3
2
TJ = 125 oC
1
0
100 125 150
TJ = 25 oC
2
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = 150 oC
90
TJ = 25 oC
60
30
TJ = -55 oC
1.5
2.0
2.5
200
100
8
10
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
6
Figure 4. On-Resistance vs. Gate to
Source Voltage
150
VDS = 5 V
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
ID, DRAIN CURRENT (A)
60
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
0
1.0
VGS = 3 V
VGS = 4.5 V VGS = 3.5 V
VGS = 10 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
120
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
4
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
10000
ID = 35 A
Ciss
8
VDD = 15 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 10 V
VDD = 20 V
4
2
0
Coss
1000
f = 1 MHz
VGS = 0 V
0
22
44
66
88
110
1
Figure 7. Gate Charge Characteristics
30
Figure 8. Capacitance vs. Drain
to Source Voltage
210
100
180
TJ = 25 oC
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 100 oC
10
TJ = 125 oC
VGS = 10 V
150
120
VGS = 4.5 V
90
60
30
o
1
0.001
0.01
0.1
1
10
100
0
25
1000
RθJC = 1.6 C/W
50
150
P(PK), PEAK TRANSIENT POWER (W)
100000
10 μs
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.6 oC/W
TC = 25 oC
10 ms
CURVE BENT TO
MEASURED DATA
1
100 ms/DC
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
TC = 25 oC
1000
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
SINGLE PULSE
RθJC = 1.6 oC/W
10000
100
0.1
0.1
125
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
1
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
10
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
100
0.1
Figure 12. Single Pulse Maximum Power
Dissipation
5
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
SINGLE PULSE
0.001
-5
10
ZθJC(t) = r(t) x RθJC
RθJC = 1.6 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
6
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
20
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
VGS = 10 V
VGS = 4.5 V
90
VGS = 3.5 V
60
VGS = 3 V
VGS = 2.5 V
30
0
0.0
0.2
0.4
0.6
0.8
15
10
5
0
1.0
0
30
60
90
120
150
ID, DRAIN CURRENT (A)
Figure 14. On- Region Characteristics
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
5
ID = 35 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
1.6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 3 V
VGS = 4.5 V VGS = 3.5 V
VGS = 10 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
ID = 35 A
3
2
TJ = 125 oC
1
0
100 125 150
TJ = 25 oC
2
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VDS = 5 V
TJ = 150 oC
90
TJ = 25 oC
60
30
TJ = -55
0
1.0
1.5
2.0
2.5
6
8
10
Figure 17. On-Resistance vs. Gate to
Source Voltage
150
120
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Normalized On-Resistance
vs. Junction Temperature
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
oC
200
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
3.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
7
1.2
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
10000
ID = 35 A
Ciss
8
VDD = 15 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 10 V
VDD = 20 V
4
2
0
Coss
1000
f = 1 MHz
VGS = 0 V
0
22
44
66
88
110
10
30
Figure 21. Capacitance vs. Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
210
100
180
TJ = 25 oC
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 100 oC
10
TJ = 125 oC
VGS = 10 V
150
120
VGS = 4.5 V
90
60
30
o
1
0.001
0.01
0.1
1
10
100
0
25
1000
RθJC = 1.6 C/W
50
150
P(PK), PEAK TRANSIENT POWER (W)
100000
10 μs
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.6 oC/W
TC = 25 oC
10 ms
CURVE BENT TO
MEASURED DATA
1
100 ms/DC
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
TC = 25 oC
1000
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
Figure 24. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
SINGLE PULSE
RθJC = 1.6 oC/W
10000
100
0.1
0.1
125
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
1
100
TC, CASE TEMPERATURE ( C)
Figure 22. Unclamped Inductive
Switching Capability
10
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
100
0.1
Figure 25. Single Pulse Maximum Power
Dissipation
8
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
SINGLE PULSE
0.001
-5
10
ZθJC(t) = r(t) x RθJC
RθJC = 1.6 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
9
www.fairchildsemi.com
FDMD8530 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
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