FDMD8540L

MOSFET – Dual, N-Channel, POWERTRENCH) Q1: 40 V, 156 A, 1.5 mW Q2: 40 V, 156 A, 1.5 mW FDMD8540L www.onsemi.com General Description This device includes two 40 V N−Channel MOSFETs in a dual Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. VDS rDS(ON) MAX ID MAX 40 V 1.5 mW @ 10 V 156 A 2.2 mW @ 4.5 V Features Q1: N−Channel • Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A Q2: N−Channel • Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A • • • • D2/S1 D2/S1 D2/S1 G2 S2 Pin 1 D1 D1 Ideal for Flexible Layout in Primary Side of Bridge Topology 100% UIL Tested Kelvin High Side MOSFET Drive Pin−out Capability This Device is Pb−Free and are RoHS Compliant D1 GR G1 Top Pin 1 Bottom PQFN8 5X6, 1.27P Power 5 x 6 CASE 483AT Applications MARKING DIAGRAM • POL Synchronous Dual • One Phase Motor Half Bridge • Half/Full Bridge Secondary Synchronous Rectification $Y&Z&3&K FDMD 8540L FDMD8540L $Y &Z &3 &K = Specific Device Code = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Date Code Format = 2−Digits Lot Run Traceability Data G1 G2 GR D2/S1 D1 D2/S1 D1 D2/S1 ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2020 April, 2021 − Rev. 2 1 Publication Order Number: FDMD8540L/D FDMD8540L MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Q1 Q2 Unit VDS Drain to Source Voltage 40 40 V VGS Gate to Source Voltage ±20 ±20 V A ID Parameter Drain Current − Continuous TC = 25°C (Note 3) 156 156 − Continuous TC = 100°C (Note 3) 99 99 − Continuous TA = 25°C 33 (Note 4a) 33 (Note 4b) − Pulsed (Note 2) 886 886 541 541 mJ W EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation TC = 25°C 62 62 Power Dissipation TA = 25°C 2.3 (Note 4a) 2.3 (Note 4b) TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Q1: EAS of 541 mJ is based on starting TJ = 25°C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 59 A. Q2: EAS of 541 mJ is based on starting TJ = 25°C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 59 A. 2. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details. 3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction−to−Case RqJA Thermal Resistance, Junction−to−Ambient Q1 Q2 Unit 2.0 2.0 °C/W 55 (Note 4a) 55 (Note 4b) in2 4. RqJA is determined with the device mounted on a 1 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b. 55°C/W when mounted on a 1 in2 pad of 2 oz copper a. 55°C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G d. 155°C/W when mounted on a minimum pad of 2 oz copper c. 155°C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G www.onsemi.com 2 FDMD8540L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Type Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V Q1 Q2 40 40 − − − − V Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C Q1 Q2 − − 20 20 − − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V Q1 Q2 − − − − 1 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V Q1 Q2 − − − − ±100 ±100 nA BVDSS DBV DSS DT J ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA Q1 Q2 1.0 1.0 1.8 1.8 3.0 3.0 V DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C Q1 Q2 − − −6 −6 − − mV/°C Static Drain to Source On Resistance VGS = 10 V, ID = 33 A Q1 mW DT J rDS(on) − 1.25 1.5 VGS = 4.5 V, ID = 26 A − 1.65 2.2 VGS = 10 V, ID = 33 A, TJ = 125°C − 1.7 2.1 − 1.25 1.5 VGS = 4.5 V, ID = 26 A − 1.65 2.2 VGS = 10 V, ID = 33 A, TJ = 125°C − 1.7 2.1 Q2 VGS = 10 V, ID = 33 A gFS Forward Transconductance VDD = 5 V, ID = 33 A Q1 Q2 − − 178 178 − − S VDS = 20 V, VGS = 0 V f = 1 MHz Q1 Q2 − − 5670 5670 7940 7940 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Q1 Q2 − − 1668 1668 2335 2335 pF Crss Reverse Transfer Capacitance Q1 Q2 − − 75 75 135 135 pF Gate Resistance Q1 Q2 0.1 0.1 1.6 1.6 3.2 3.2 W Q1 Q2 − − 15 15 28 28 ns Rise Time Q1 Q2 − − 13 13 24 24 ns Turn−Off Delay Time Q1 Q2 − − 51 51 81 81 ns Fall Time Q1 Q2 − − 14 14 25 25 ns Rg SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time VDD = 20 V, ID = 33 A VGS = 10 V, RGEN = 6 W Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 20 V, ID = 33 A Q1 Q2 − − 81 81 113 113 nC Qg(TOT) Total Gate Charge VGS = 0 V to 4.5 V VDD = 20 V, ID = 33 A Q1 Q2 − − 38 38 54 54 nC Qgs Gate to Source Charge VDD = 20 V, ID = 33 A Q1 Q2 − − 15 15 − − nC Qgd Gate to Drain “Miller” Charge VDD = 20 V, ID = 33 A Q1 Q2 − − 11 11 − − nC www.onsemi.com 3 FDMD8540L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Parameter Test Condition Type Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 33 A (Note 5) Q1 Q2 − − 0.8 0.8 1.3 1.3 V VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 5) Q1 Q2 − − 0.7 0.7 1.2 1.2 V trr Reverse Recovery Time IF = 33 A, di/dt = 100 A/ms Q1 Q2 − − 54 54 86 86 ns Qrr Reverse Recovery Charge Q1 Q2 − − 38 38 60 60 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %. TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) ID, DRAIN CURRENT (A) 150 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE (TJ = 25°C unless otherwise noted) VGS = 10 V VGS = 6 V 120 VGS = 4.5 V 90 VGS = 3.5 V VGS = 4 V 60 30 PULSE DURATION = 80 mss DUTY CYCLE = 0.5% MAX 0 0.0 0.3 0.6 0.9 6.0 VGS = 3.5 V 4.5 3.0 VGS = 4 V 1.5 VGS = 4.5 V 0.0 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on) DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID = 33 A VGS = 10 V 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −75 −50 −25 0 25 50 75 60 90 120 150 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.8 1.6 VGS = 10 V VGS = 6 V ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.7 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 12 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 9 ID = 33 A 6 3 TJ = 125°C TJ = 25°C 0 2 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature Figure 4. On−Resistance vs. Gate to Source Voltage www.onsemi.com 4 10 FDMD8540L TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued) VDS = 5 V PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 120 90 60 TJ = 150°C TJ = 25°C 30 TJ = −55°C 0 1 2 3 4 300 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 150 5 10 1 TJ = 150°C 0.01 TJ = −55°C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Gate Diode Forward Voltage vs. Source Current 10 10000 ID = 33 A Ciss CAPACITANCE (pF) 8 VDD = 15 V 6 VDD = 25 V VDD = 20 V 4 2 0 0 15 30 45 60 75 1000 f = 1 MHz VGS = 0 V 10 0.1 90 Crss 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 180 ID, DRAIN CURRENT (A) 100 TJ = 100°C TJ = 25°C 125 oC TJ = 125°C 10 1 0.001 Coss 100 Qg, GATE CHARGE (nC) IAS, AVALANCHE CURRENT (A) TJ = 25°C 0.1 VGS, GATE TO SOURCE VOLTAGE (V) VGS, GATE TO SOURSE VOLTAGE (V) VGS = 0 V 0.01 0.1 1 10 100 150 VGS = 10 V 120 90 30 0 25 1000 tAV, TIME IN AVALANCHE (ms) VGS = 4.5 V 60 Rq JC = 2.0°C/W 50 75 100 125 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature www.onsemi.com 5 150 FDMD8540L TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued) P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 3000 THIS AREA IS 1000 LIMITED BY r DS(on) 10 ms 100 10 100 ms 1 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 0.1 100 ms/DC Rq JC = 2.0°C/W 0.01 0.01 CURVE BENT TO MEASURED DATA TC = 25°C 0.1 1 10 100 200 30000 SINGLE PULSE Rq JC = 2.0°C/W 10000 TC = 25°C 1000 100 10 −5 10 −4 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 11. Forward Bias Safe Operating Area 2 0.1 −2 10 −1 10 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) 1 −3 10 Figure 12. Single Pulse Maximum Power Dissipation DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 2.0°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.01 0.001 −5 10 SINGLE PULSE −4 10 −3 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 6 −1 10 1 FDMD8540L TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) ID, DRAIN CURRENT (A) 150 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE (TJ = 25°C unless otherwise noted) VGS = 10 V VGS = 6 V 120 VGS = 4.5 V 90 VGS = 3.5 V VGS = 4 V 60 30 0 0.0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0.3 0.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.9 6.0 4.5 VGS = 4 V 1.5 VGS = 4.5 V 0.0 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE rDS(on) DRAIN TO SOURCE ON−RESISTANCE (mW) ID = 33 A VGS = 10 V 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −75 −50 −25 0 25 50 75 0 30 100 125 150 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5 V 60 TJ = 25°C 30 TJ = −55°C 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 150 9 ID = 33 A 6 3 TJ = 125°C TJ = 25°C 0 2 3 4 5 6 7 8 9 10 Figure 17. On−Resistance vs. Gate to Source Voltage 90 0 120 VGS, GATE TO SOURCE VOLTAGE (V) 150 TJ = 150°C 90 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX Figure 16. Normalized On Resistance vs. Junction Temperature 120 60 ID, DRAIN CURRENT (A) 12 TJ, JUNCTION TEMPERATURE (°C) PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VGS = 10 V VGS = 6 V Figure 15. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.8 1.6 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 3.0 Figure 14. On−Region Characteristics 1.7 VGS = 3.5 V 5 300 100 VGS = 0 V 10 1 TJ = 150°C TJ = 25°C 0.1 0.01 TJ = −55°C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Transfer Characteristics Figure 19. Source to Gate Diode Forward Voltage vs. Source Current www.onsemi.com 7 FDMD8540L TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) 10 10000 ID = 33 A 8 CAPACITANCE (pF) VGS, GATE TO SOURSE VOLTAGE (V) (TJ = 25°C unless otherwise noted) (continued) VDD = 15 V 6 VDD = 25 V VDD = 20 V 4 2 0 0 15 30 45 60 75 Ciss 1000 Coss 100 f = 1 MHz VGS = 0 V 10 0.1 90 Qg, GATE CHARGE (nC) 40 180 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 21. Capacitance vs. Drain to Source Voltage TJ = 100°C TJ = 25°C oC TJ = 125 125°C 10 1 0.001 0.01 0.1 1 10 100 150 VGS = 10 V 120 90 VGS = 4.5 V 60 30 0 25 1000 Rq JC = 2.0°C/W tAV, TIME IN AVALANCHE (ms) P(pk), PEAK TRANSIENT POWER (W) 10 ms 10 100 ms 1 1 ms 10 ms 0.1 0.01 0.01 SINGLE PULSE TJ = MAX RATED RqJC = 2.0°C/W TC = 25°C 0.1 100 ms/DC CURVE BENT TO MEASURED DATA 1 10 75 100 125 150 Figure 23. Maximum Continuous Drain Current vs. Case Temperature THIS AREA IS LIMITED BY r DS(on) 100 50 TC, CASE TEMPERATURE (°C) Figure 22. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 20. Gate Charge Characteristics 3000 1000 Crss 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 24. Forward Bias Safe Operating Area 30000 SINGLE PULSE Rq JC = 2.0°C/W 10000 TC = 25°C 1000 100 10 −5 10 −4 10 −3 10 −2 10 t, PULSE WIDTH (sec) −1 10 Figure 25. Single Pulse Maximum Power Dissipation www.onsemi.com 8 1 FDMD8540L TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (TJ = 25°C unless otherwise noted) (continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 2.0°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 −5 10 −4 10 −3 −2 10 −1 10 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 26. Junction−to−Case Transient Thermal Response Curve PACKAGE MARKING AND ORDERING INFORMATION Device Marking FDMD8540L Device Package Type Reel Size Tape Width Shipping† FDMD8540L PQFN8 5X6, 1.27P Power 5 x 6 (Pb−Free) 13” 12 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AT ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13668G PQFN8 5X6, 1.27P DATE 12 MAR 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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