FDME910PZT

P-Channel PowerTrench® MOSFET General Description -20 V, -8 A, 24 mΩ Features This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. „ Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A „ Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A „ Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ HBM ESD protection level > 2 kV typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant G Bottom Drain Contact D D S Pin 1 D 1 6 D D 2 5 D G 3 4 S S D D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -8 A -32 Power Dissipation TA = 25°C (Note 1a) 2.1 Power Dissipation TA = 25°C (Note 1b) 0.7 Operating and Storage Junction Temperature Range W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 175 °C/W Package Marking and Ordering Information Device Marking E91 Device FDME910PZT ©2012 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Package MicroFET 1.6x1.6 Thin Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units Publication Order Number: FDME910PZT/D FDME910PZT P-Channel PowerTrench® MOSFET FDME910PZT Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 μA -1.5 V -20 V -16 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C 2.7 VGS = -4.5 V, ID = -8 A 20 24 VGS = -2.5 V, ID = -7 A 25 31 VGS = -1.8 V, ID = -6 A 32 45 VGS = -4.5 V, ID = -8 A,TJ = 125°C 26 36 VDD = -5 V, ID = -8 A 38 rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -0.4 -0.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 1586 2110 pF 236 355 pF 218 330 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -8 A, VGS = -4.5 V, RGEN = 6 Ω VGS = -4.5 V, VDD = -10 V, ID = -8 A 9 18 ns 11 20 ns 87 139 ns 46 74 ns 15 21 nC 2.2 nC 3.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = - 8 A (Note 2) VGS = 0 V, IS = -1.8 A (Note 2) IF = -8 A, di/dt = 100 A/μs -0.57 -0.8 -1.2 V -0.7 -1.2 V 17 31 ns 4.1 10 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 60 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 175 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDME910PZT P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 32 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = - 3 V 24 VGS = -2.5 V 16 VGS = -1.8 V 8 VGS = -1.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 VGS = -1.5 V VGS = -1.8 V 2 VGS = -2.5 V 1 0 0 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) 24 32 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 120 ID = -8 A VGS = -4.5 V rDS(on), DRAIN TO 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) 1.4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = -8 A 80 TJ = 125 oC 40 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 -IS, REVERSE DRAIN CURRENT (A) 32 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = -5 V 24 TJ = 150 oC 16 TJ = 25 oC 8 TJ = -55 oC 0 0.5 1.0 1.5 2.0 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDME910PZT P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3000 ID = -8 A Ciss VDD = -8 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -10 V VDD = -12 V 1.5 1000 Coss Crss f = 1 MHz VGS = 0 V 0.0 0 4 8 12 100 0.1 16 Figure 7. Gate Charge Characteristics -1 20 50 -2 VDS = 0 V 10 -3 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 10 10 -4 10 -5 TJ = 125 oC 10 -6 10 -7 10 -8 10 TJ = -9 25 oC 10 1 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 175 oC/W 10 TA = 25 oC -10 10 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0 3 6 9 12 0.01 0.01 15 0.1 1 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 100 SINGLE PULSE o RθJA = 175 C/W o TA = 25 C 10 1 0.1 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 4 100 1000 FDME910PZT P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 175 C/W (Note 1b) 0.001 -3 10 -2 10 -1 10 0 10 1 10 100 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 1000 FDME910PZT P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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