FDMQ8203

DATA SHEET www.onsemi.com MOSFET – Dual N-Channel and Dual P-Channel, POWERTRENCH), GreenBridgetSeries of High-Efficiency Bridge Rectifiers Top Bottom G4 S4 S4 G3 S3 S3 D3/ D4 D3/ D4 Pin 1 G1 S1 S1 G2 S2 S2 D1/ D2 D1/ D2 WDFN12 5x4.5, 0.8P CASE 511CS MARKING DIAGRAM N-Channel: 100 V, 6 A, 110 mW P-Channel: -80 V, -6 A, 190 mW ZXYKK FDMQ 8203 FDMQ8203 General Description This quad mosfet solution provides ten−fold improvement in power dissipation over diode bridge. Features • Q1/Q4: N−Channel Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P−Channel ♦ Max RDS(on) = 190 mΩ at VGS = −10 V, ID = −2.3 A ♦ Max RDS(on) = 235 mΩ at VGS = −4.5 V, ID = −2.1 A FDMQ8203 Z XY KK = Specific Device Code = Assembly Plant Code = Date Code = Lot Run Traceability Code ♦ • N−Channel / P−Channel ♦ S3 7 Q3 (Pch) Q2 (Pch) S3 8 G3 Applications • High−Efficiency Bridge Rectifiers • Substantial Efficiency Benefit in PD Solutions • These Device is Pb−Free, Halide Free and is RoHS Compliant 5 S2 4 G2 9 S4 10 6 S2 Q4 (Nch) Q1 (Nch) 3 S1 S1 S4 11 2 G4 12 1 G1 D3,D4 to backside (isolated from D1,D2) D1,D2 to backside ORDERING INFORMATION Device Package FDMQ8203 MLP 4.5x5 (Pb−Free, Halide Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2022 August 2022 − Rev.4 1 Publication Order Number: FDMQ8203/D FDMQ8203 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Q1/Q4 Q2/Q3 Unit VDS Drain to Source Voltage 100 −80 V VGS Gate to Source Voltage ±20 ±20 V A ID Drain Current − Continuous (Package Limited) TC = 25°C 6 −6 − Continuous (Silicon Limited) TC = 25°C 10 −10 − Continuous TA = 25°C (Note 1a) 3.4 −2.6 12 −10 22 37 W −55 to +150 °C − Pulsed PD TJ, TSTG Power Dissipation for Single Operation TC = 25°C Power Dissipation for Dual Operation TA = 25°C (Note 1a) Operating and Storage Junction Temperature Range 2.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 160 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Type Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 ID = −250 mA, VGS = 0 Q1/Q4 Q2/Q3 100 −80 − − − − V Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25_C ID = −250 mA, Referenced to 25_C Q1/Q4 Q2/Q3 − − 72 −79 − − mV/_C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V VDS = −64 V, VGS = 0 V Q1/Q4 Q2/Q3 − − − − 1 −1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V Q1/Q4 Q2/Q3 − − − − ±100 ±100 nA DBV DSS DT J ON CHARACTERISTICS (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA VGS = VDS, ID = −250 mA Q1/Q4 Q2/Q3 2 −1 3 −1.6 4 −3 V DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, Referenced to 25_C ID = −250 mA, Referenced to 25_C Q1/Q4 Q2/Q3 − − −8 5 − − mV/_C Static Drain−Source On−Resistance VGS = 10 V, ID = 3 A VGS = 6 V, ID = 2.4 A VGS = 10 V, ID = 3 A, TJ = 125_C Q1/Q4 − − − 85 118 147 110 175 191 mW VGS = −10 V, ID = −2.3 A VGS = −4.5 V, ID = −2.1 A VGS = −10 V, ID = −2.3 A, TJ = 125_C Q2/Q3 − − − 161 188 273 190 235 323 VDS = 10 V, ID = 3 A VDS = −10 V, ID = −2.3 A Q1/Q4 Q2/Q3 − − 6 6 − − S DT J RDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Q1/Q4 VDD = 50 V, VGS = 0 V, f = 1.0 MHz Q1/Q4 Q2/Q3 − − 158 639 210 850 pF Coss Output Capacitance Q2/Q3 VDS = −40 V, VGS = 0 V, f = 1.0 MHz Q1/Q4 Q2/Q3 − − 41 46 55 65 pF Crss Reverse Transfer Capacitance Q1/Q4 Q2/Q3 − − 2.6 24 5 40 pF www.onsemi.com 2 FDMQ8203 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Parameter Test Condition Type Min Typ Max Unit Q1/Q4 Q2/Q3 − − 3.8 4.7 10 10 ns Q1/Q4 Q2/Q3 − − 1.3 2.8 10 10 ns Q1/Q4 Q2/Q3 − − 7.5 22 15 35 ns Q1/Q4 Q2/Q3 − − 1.9 2.7 10 10 ns Q1/Q4 Q2/Q3 − − 2.9 13 5 19 nC Q1/Q4 Q2/Q3 − − 1.6 6.4 3 10 nC Q1/Q4 Q2/Q3 − − 0.8 1.6 − − nC Q1/Q4 Q2/Q3 − − 0.8 2.6 − − nC Q1/Q4 Q2/Q3 − − 0.86 −0.82 1.3 −1.3 V Q1/Q4 Q2/Q3 − − 32 26 52 42 ns Q1/Q4 Q2/Q3 − − 21 26 34 42 nC SWITCHING CHARACTERISTICS (Note 2) td(on) tr td(off) tf Turn–On Delay Time Rise Time Turn–Off Delay Time Q1/Q4 VDD = 50 V, ID = 3 A, VGS = 10 V, RGEN = 6 W Q2/Q3 VDD = −40 V, ID = −2.3 A, VGS = −10 V, RGEN = 6 W Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to −10 V Qg Total Gate Charge VGS = 0 V to 5 V VGS = 0 V to −4.5 V Qgs Gate–Source Gate Charge Qgd Gate to Drain Miller" Charge Q1/Q4: VDD = 50 V, ID = 3 A Q2/Q3 VDD = −40 V, ID = −2.3 A DRAIN–SOURCE DIODE CHARACTERISTICS VSD Source to Drine Diode Forward Voltage VGS = 0 V, IS = 3 A VGS = 0 V, IS = −2.3 A trr Reverse Recovery Time Qrr Reverse Recovery Charge Q1/Q4: IF = 3 A, di/dt = 100 A/ms Q2/Q3: IF = −2.3 A, di/dt = 100 A/ms (Note 2) (Note 2) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b) 160°C/W when mounted on a minimum pad of 2 oz copper, the board designed Q1+Q3 or Q2+Q4. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper, the board designed Q1+Q3 or Q2+Q4. 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% www.onsemi.com 3 FDMQ8203 TYPICAL CHARACTERISTICS (N−CHANNEL) (TJ = 25°C unless otherwise noted) 5 VGS = 10 V VGS = 8 V VGS = 7 V 9 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 6 V 6 VGS = 5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1 0 2 5 4 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 5 V 4 VGS = 6 V 3 2 VGS = 7 V 1 0 3 0 1.4 1.2 1.0 0.8 −50 −25 0 25 75 50 100 125 150 300 200 TJ = 125°C TJ = 25°C 100 0 4 5 TJ, JUNCTION TEMPERATURE (°C) IS, RESERVE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5 V 6 TJ = 150°C 3 TJ = 25°C TJ = −55°C 0 2 3 4 5 6 9 8 7 10 Figure 4. On−Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 9 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 12 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 3 A RDS(ON) DRAIN TO SOURCE ON−RESISTANCE (MW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 400 ID = 3 A VGS = −10 V 1.6 0.6 −75 12 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage Figure 1. On Region Characteristics 1.8 9 6 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 10 V VGS = 8 V 20 10 TJ = 150°C 1 TJ = 25°C 0.1 TJ = −55°C 0.01 0.001 7 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.2 FDMQ8203 TYPICAL CHARACTERISTICS (N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued) 1000 ID = 3 A CISS 8 VDD = 25 V VDD = 50 V 6 VDD = 75 V 4 CAPACITANCE (pF) VGS, GATE−SOURCE VOLTAGE (V) 10 100 COSS 10 2 0 0 1.0 0.5 1.5 2.0 2.5 1 0.1 3.0 QG, GATE CHARGE (°C) ID, DRAIN CURRENT (A) 1 ms 1 10 ms THIS AREA IS LIMITED BY RDS(on) 0.005 0.1 100 ms 1s SINGLE PULSE TJ = MAX RATED RθJA = 160°C/W TA = 25°C 1 10 s DC 10 1 10 Figure 8. Capacitance vs Drain to Source Voltage 20 10 0.01 CRSS VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 0.1 F = 1 Mhz VGS = 0 V 100 300 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area www.onsemi.com 5 100 FDMQ8203 TYPICAL CHARACTERISTICS (P−CHANNEL) (TJ = 25°C unless otherwise noted) 6 VGS = −3 V 4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 0 VGS = −2.5 V 2 1 0 2.0 NORMALIZED DRAIN−SOURCE ON−RESISTANCE VGS = −3.5 V VGS = −4.5 V 8 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE VGS = −10 V 4 3 3 VGS = −3.5 V VGS = −4.5 V 2 1 0 0.14 1 0.8 0.6 −50 −25 0 25 50 75 125 150 100 TJ = 125°C 0.08 0.06 TJ = 25°C 0.04 0.02 0 VDS = −5°C TJ = 150°C 4 TJ = 25°C 2 TJ = −55°C 2 3 10 Figure 13. On−Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 8 6 4 2 VGS, GATE TO SOURCE VOLTAGE (V) IS, RESERVE DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 10 0.1 Figure 12. Normalized On−Resistance vs Junction Temperature 1 8 6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = −2.3 A 0.12 TJ, JUNCTION TEMPERATURE (°C) 0 4 Figure 11. Normalized On−Resistance vs Drain Current and Gate Voltage 1.2 8 2 Figure 10. On−Region Characteristics 1.4 10 VGS = −10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX −ID, DRAIN CURRENT (A) 1.6 0.4 −75 VGS = −3 V VGS = −2.5 V −VDS, DRAIN TO SOURCE VOLTAGE (V) ID = −2.3 A VGS = −10 V 1.8 4 0 5 RDS(ON), DRAIN TO SOURCE ON−RESISTANCE (mW) −ID, DRAIN CURRENT (A) 10 VGS = 0 V TJ = 150°C 1 TJ = 25°C 0.1 TJ = −55°C 0.01 0.001 5 4 10 0 0.2 0.4 0.6 0.8 1 −VGS, GATE TO SOURCE VOLTAGE (V) −VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 14. Transfer Characteristics Figure 15. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 6 1.2 FDMQ8203 1000 10 ID = −2.3 A CISS 8 CAPACITANCE (pF) −VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (Q1 P−CHANNEL) (TJ = 25°C unless otherwise noted) (continued) VDS = −8 V 6 VDS = −10 V 4 VDD = −12 V 2 0 2 0 6 4 8 10 COSS 10 14 12 100 f = 1 MHz VGS = 0 V 0.1 Qg, GATE CHARGE (nC) −ID, DRAIN CURRENT (A) 20 10 1 ms 0.1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.01 0.005 0.1 100 ms 1s SINGLE PULSE TJ = MAX RATED RθJA = 160°C/W TA = 25°C 1 10 s DC 10 1 10 −VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Capacitance vs Drain to Source Voltage Figure 16. Gate Charge Characteristics 1 CRSS 100 300 −VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 18. Forward Bias Safe Operating Area www.onsemi.com 7 100 FDMQ8203 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) P(PK), PEAK TRANSIENT POWER (W) 2000 1000 SINGLE PULSE RqJA = 160°C/W TA = 25°C 100 10 1 0.1 10−4 10−3 10−2 10−1 1 100 10 1000 t, PULSE WIDTH (s) Figure 19. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEANCE, ZqJA 1 DUTY CYCLE − DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t2 0.01 0.001 0.0005 10−4 t1 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM * ZqJA * RqJA + TA SINGLE PULSE RqJA = 160°C/W 10−3 10−2 10−1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 20. Junction−to−Ambient Transient Thermal Response Curve POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. GreenBridge is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN12 5x4.5, 0.8P CASE 511CS ISSUE O 5.00 0.10 C DATE 31 AUG 2016 A 2X B 12 4.45 (0.40) (0.25) 2.10(4X) 7 1.00(4X) 4.50 PIN#1 IDENT AREA 3.50 4.80 (0.50) (0.50)2X 0.10 C TOP VIEW 2X (0.65) 1 0.80 0.40 (12x) 6 RECOMMENDED LAND PATTERN 0.80 MAX 0.10 C (0.20) 0.08 C 0.05 0.00 SEATING PLANE C SIDE VIEW 5.00±0.05 1.95 (4X) 1.85 1 6 (0.35)4X NOTES: A. PACKAGE DOES NOT FULLY CONFORM TO JEDEC MO−229 REGISTRATION B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. (0.50)2X PIN#1 IDENT (0.50)2X 4.50±0.05 1.05 (4X) 0.95 0.55 0.45 0.10 0.05 12 0.80 2.40 C A B C 7 0.35 (12X) 0.25 BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13607G WDFN12 5X4.5, 0.8P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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