FDMS001N025DSD

FDMS001N025DSD PowerTrench) Power Clip 25 V Asymmetric Dual N−Channel MOSFET General Description www.onsemi.com This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. 1 Features Q1: N−Channel • Max rDS(on) = 3.25 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 4 mW at VGS = 4.5 V, ID = 17 A Q2: N−Channel • Max rDS(on) = 0.92 mW at VGS = 10 V, ID = 38 A • Max rDS(on) = 1.20 mW at VGS = 4.5 V, ID = 34 A • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PQFN8 POWER CLIP CASE 483AR PAD9 V+(HSD) HSG LSG SW GR PAD10 GND(LSS) V+ SW V+ Applications • Computing • Communications • General Purpose Point of Load SW LSG HSG GR SW SW V+ SW V+ SW PIN ASSIGNMENT Pin Name 1 HSG 2 GR 3,4,9 V+(HSD) Description High Side Gate Gate Return High Side Drain 5,6,7 SW Switching Node, Low Side Drain 8 LSG Low Side Gate 10 GND(LSS) Low Side Source ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2017 October, 2017 − Rev. 0 1 Publication Order Number: FDMS001N025DSD/D FDMS001N025DSD Table 1. MAXIMUM RATINGS TA = 25°C unless otherwise noted Parameter Symbol Q1 Q2 Units VDS Drain to Source Voltage 25 (Note 1) 25 V VGS Gate to Source Voltage +16/−12V +16/−12V V 69 165 A ID Drain Current −Continuous TC = 25°C (Note 2) −Continuous TC = 100°C (Note 2) −Continuous TA = 25°C −Pulsed 43 104 19 (Note 7a) 38 (Note 7b) TA = 25°C (Note 3) 381 1240 (Note 4) 121 337 mJ W EAS Single Pulse Avalanche Energy PD Power Dissipation for Single Operation TC = 25°C 26 42 Power Dissipation for Single Operation TA = 25°C 2.1 (Note 7a) 2.3 (Note 7b) TJ, TSTG Operating and Storage Junction Temperature Range °C −55 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied. 2. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. 3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graphs for more details. 4. Q1: EAS of 121 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 9 A, VDD = 25 V. 100% tested at L = 0.1 mH, IAS = 29 A. Q2: EAS of 337 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 15 A, VDD = 25 V. 100% tested at L = 0.1 mH, IAS = 48 A. Table 2. THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Units 4.9 3.0 °C/W Thermal Resistance, Junction to Ambient 60 (Note 7a) 55 (Note 7b) Thermal Resistance, Junction to Ambient 130 (Note 7c) 120 (Note 7d) Type Min Typ 25 25 RqJC Thermal Resistance, Junction to Case RqJA RqJA Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Max Units OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ID = 1 mA, VGS = 0 V Q1 Q2 DBVDSS/ DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C ID = 10 mA, referenced to 25°C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V Q1 Q2 1 500 mA mA IGSS Gate to Source Leakage Current VGS = +16 V/−12 V, VDS = 0 V VGS = +16 V/−12 V, VDS = 0 V Q1 Q2 ±100 ±100 nA nA 2.5 3.0 V BVDSS V 15 28 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 320 mA VGS = VDS, ID = 1 mA Q1 Q2 DVGS(th)/ DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 1 mA, referenced to 25°C ID = 10 mA, referenced to 25°C Q1 Q2 −4 −3 Drain to Source On Resistance VGS = 10 V, ID = 19 A VGS = 4.5 V, ID = 17 A VGS = 10 V, ID = 19 A,TJ =125°C Q1 2.5 3.0 3.5 3.25 4.0 5.0 VGS = 10 V, ID = 38 A VGS = 4.5 V, ID = 34 A VGS = 10 V, ID = 38 A,TJ = 125°C Q2 0.70 0.92 0.96 0.92 1.20 1.38 rDS(on) www.onsemi.com 2 0.8 1.0 1.3 1.5 mV/°C mW FDMS001N025DSD Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units ON CHARACTERISTICS gFS Forward Transconductance VDS = 5 V, ID = 19 A VDS = 5 V, ID = 38 A Q1 Q2 98 262 S Q1: VDS = 13 V, VGS = 0 V, f = 1 MHZ Q1 Q2 1370 5105 pF Q1 Q2 625 1810 pF Q1 Q2 44 173 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Q2: VDS = 13 V, VGS = 0 V, f = 1 MHZ Gate Resistance 0.4 0.3 1.2 1.0 W Q1 Q2 8 15 16 26 ns Q1 Q2 2 5 10 10 ns Q1 Q2 22 39 34 62 ns Q1 Q2 2 4 10 10 ns Q1 Q2 21 75 30 104 nC Q1 Q2 9.7 35 14 49 nC Q1 Q2 2.9 12 nC Q1 Q2 2.0 7.9 nC 0.8 0.8 Q1 Q2 0.1 0.1 SWITCHING CHARACTERISTICS td(on) tr td(off) tf Q1: VDD = 13 V, ID = 19 A, RGEN = 6 W Turn−On Delay Time Rise Time Q2: VDD = 13 V, ID = 38 A, RGEN = 6 W Turn−Off Delay Time Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 4.5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Q1 VDD = 13 V, ID = 19 A Q2 VDD = 13 V, ID = 38 A DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Forward Voltage VGS = 0 V, IS = 19 A (Note 6) VGS = 0 V, IS = 38 A (Note 6) Q1 Q2 Diode continuous forward current TC = 25°C (Note 2) Diode pulse current trr Reverse Recovery Time Qrr Reverse Recovery Charge VSD IS IS,Pulse 1.2 1.2 V Q1 Q2 69 125 A TC = 25°C (Note 3) Q1 Q2 381 1240 A Q1 IF = 19 A, di/dt = 100 A/ms Q2 IF = 38 A, di/dt = 300 A/ms Q1 Q2 27 39 44 62 ns Q1 Q2 12 55 21 87 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. 6. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDMS001N025DSD FDMS001N025DSD Power Clip 56 13” 12 mm 3000 units www.onsemi.com 3 FDMS001N025DSD (Note 7a) (Note 7b) SS SF DS DF G SS SF DS DF G (Note 7c) (Note 7d) SS SF DS DF G SS SF DS DF G 7. a) 60°C/W when mounted on a 1 in2 pad of 2 oz copper b) 55°C/W when mounted on a 1 in2 pad of 2 oz copper c) 130°C/W when mounted on a minimum pad of 2 oz copper d) 120°C/W when mounted on a minimum pad of 2 oz copper www.onsemi.com 4 FDMS001N025DSD TYPICAL CHARACTERISTICS (Q1 N−Channel) TJ = 25°C unless otherwise noted 90 ID, DRAIN CURRENT (A) 75 VGS = 4.5 V VGS = 3.5 V 60 VGS = 3 V VGS = 2.5 V 45 30 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 15 0 0.0 0.5 1.0 1.5 6 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE VGS = 10 V 3 VGS = 3 V 2 1 VGS = 3.5 V 0 2.0 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 1.5 0.7 −75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE o(C) 60 45 TJ = 150 oC TJ = 25 oC 15 TJ = −55oC 2 3 90 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX ID = 19 A 10 TJ = 125 oC 5 TJ = 25 oC 100 1 75 1 2 3 4 5 6 7 8 9 10 Figure 4. On−Resistance vs. Gate to Source Voltage PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX VDS = 5 V 30 60 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 45 15 0 Figure 3. Normalized On Resistance vs. Junction Temperature 0 30 20 ID = 19 A VGS = 10 V 75 15 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.7 0 0 VGS = 10 V VGS = 4.5 V ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 90 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 VGS = 2.5 V 5 VGS = 0 V 10 1 TJ = 25 oC 0.1 TJ = −55oC 0.01 0.001 0.0 4 TJ = 150 oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 5 1 FDMS001N025DSD 10 10000 ID = 19 A VDD = 10 V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (Q1 N−Channel) TJ = 25°C unless otherwise noted VDD = 13 V 6 VDD = 15 V 4 1000 Coss 100 Crss 10 2 0 f = 1 MHz VGS = 0 V 0 5 10 15 20 1 0.1 25 Figure 7. Gate Charge Characteristics 80 25 o RqJC = 4.9 C/W TJ = ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs. Drain to Source Voltage 100 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 1 10 60 75 100 125 150 o Figure 10. Maximum Continuous Drain Current vs. Case Temperature 500 P(PK), PEAK TRANSIENT POWER (W) 10000 10 m s 100 100 m s 10 THIS AREA IS LIMITED BY r DS(on) 1 ms 10 ms SINGLE PULSE TJ = MAX RATED RqJC = 4.9 oC/W 100 ms CURVE BENT TO MEASURED DATA TC = 25 oC 0.1 0.1 50 TC, CASE TEMPERATURE (C) Figure 9. Unclamped Inductive Switching Capability 1 VGS = 4.5 V 20 0 25 100 VGS = 10 V 40 tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) SINGLE PULSE RqJA = 4.9 oC/W TA = 25 oC 1000 100 10 −5 10 −4 10 −3 10 −2 10 −1 10 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 6 1 FDMS001N025DSD r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (Q1 N−Channel) TJ = 25°C unless otherwise noted 2 1 0.1 0.01 0.001 −5 10 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: ZqJC(t) = r(t) x RqJC RqJC = 4.9 oC/W Peak T J = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 −4 10 −3 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 7 −1 10 1 FDMS001N025DSD TYPICAL CHARACTERISTICS (Q2 N−Channel) TJ = 25°C unless otherwise noted VGS = 10 V 75 VGS = 4.5 V 60 VGS = 3.5 V 45 VGS = 3 V PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 30 15 VGS = 2.5 V 0 0.0 0.1 0.2 15 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 90 12 9 6 VGS = 3 V 0 0.3 rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 SOURCE ON−RESISTANCE(mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 1.3 0.7 −75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATUREo(C) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 125 oC 30 TJ = 25 oC 15 TJ = −55 oC 2 3 75 90 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX ID = 38 A 4 3 2 TJ = 125 oC 1 TJ = 25 oC 1 90 45 1 60 2 3 4 5 6 7 8 9 10 Figure 17. On−Resistance vs. Gate to Source Voltage PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX VDS = 5 V 0 45 VGS, GATE TO SOURCE VOLTAGE (V) 60 0 30 5 0 Figure 16. Normalized On Resistance vs. Junction Temperature 75 15 6 1.4 90 0 Figure 15. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = 38 A V GS = 10 V 1.5 VGS = 10 V ID, DRAIN CURRENT (A) Figure 14. On Region Characteristics 1.7 VGS = 3.5 V VGS = 4.5 V 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX VGS = 2.5 V VGS = 0 V 10 1 TJ = 25 oC 0.1 TJ = −55 oC 0.01 0.001 0.0 4 TJ = 125 oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 8 FDMS001N025DSD TYPICAL CHARACTERISTICS (Q2 N−Channel) TJ = 25°C unless otherwise noted 10000 VGS, GATE TO SOURCE VOLTAGE (V) 10 Ciss ID = 38 A 8 6 CAPACITANCE (pF) VDD = 10 V VDD = 13 V 4 VDD = 15 V 1000 Coss 100 Crss 2 0 f = 1 MHz VGS = 0 V 0 16 32 48 64 10 0.1 80 1 10 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs. Drain to Source Voltage 100 200 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RqJC = 3.0 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 1 10 100 160 VGS = 10 V 120 80 VGS = 4.5 V 40 0 25 1000 50 tAV, TIME IN AVALANCHE (ms) 100 P(PK), PEAK TRANSIENT POWER (W) 100000 10 m s 100 100 m s 1 THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ= MAX RATED 10 ms 100 ms o R qJC = 3.0 C/W TC = 25 oC 0.1 0.1 1 150 Figure 23. Maximum Continuous Drain Current vs. Case Temperature 2000 1000 10 125 o Figure 22. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 75 TC, CASE TEMPERATURE (C) CURVE BENT TO MEASURED DATA 10 SINGLE PULSE RqJC = 3.0 oC/W TC = 25 oC 10000 1000 100 VDS, DRAIN to SOURCE VOLTAGE (V) 100 10 −5 10 −4 10 −3 10 −2 10 −1 10 t, PULSE WIDTH (sec) Figure 24. Forward Bias Safe Operating Area Figure 25. Single Pulse Maximum Power Dissipation www.onsemi.com 9 1 FDMS001N025DSD r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (Q2 N−Channel) TJ = 25°C unless otherwise noted 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 ZqJC(t) = r(t) x RqJC RqJC = 3.0 oC/W Peak T J = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −5 10 −4 10 −3 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 26. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 10 −1 10 1 FDMS001N025DSD TYPICAL CHARACTERISTICS (continued) ON Semiconductor’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverses recovery characteristic of the FDMS001N025DSD. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. −2 IDSS , REVERSE LEAKAGE CURRENT (A) 45 40 CURRENT (A) 35 30 25 didt = 239 A/m s 20 15 10 5 0 −5 100 150 200 250 300 350 400 10 TJ = 125 oC −3 10 TJ = 100 oC −4 10 −5 10 TJ = 25 oC −6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) TIME (ns) Figure 27. FDMS001N025DSD SyncFET Body Diode Reverse Recovery Characteristic Figure 28. SyncFET Body Diode Reverse Leakage vs. Drain−Source Voltage PowerTrench is a registered trademark of Semiconductor Components Industries, LLC. www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 5x6, 1.27P CASE 483AR ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13666G PQFN8 5x6, 1.27P DATE 21 MAY 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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