FDMS0300S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS0300S N-Channel PowerTrench® SyncFET™ 30 V, 49 A, 1.8 mΩ Features General Description The FDMS0300S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design Applications „ 100% UIL tested „ Synchronous Rectifier for DC/DC Converters „ RoHS Compliant „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switch Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 49 194 (Note 1a) 31 (Note 3) 242 -Pulsed A 180 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 96 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.3 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS0300S Device FDMS0300S ©2009 Fairchild Semiconductor Corporation FDMS0300S Rev.C1 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS0300S N-Channel PowerTrench® SyncFET™ October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 19 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.6 -5 mV/°C VGS = 10 V, ID = 30 A 1.3 1.8 VGS = 4.5 V, ID = 25 A 1.6 2.0 VGS = 10 V, ID = 30 A, TJ = 125 °C 1.8 2.5 VDS = 5 V, ID = 30 A 161 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 6545 8705 pF 2465 3280 pF 210 315 pF 0.5 1.1 Ω 22 35 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 15 V, ID = 30 A, VGS = 10 V, RGEN = 6 Ω 12 21 ns 50 80 ns 7 13 ns Total Gate Charge VGS = 0 V to 10 V 95 133 nC Qg Total Gate Charge 60 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 30 A 43 Qgs Qgd Gate to Drain “Miller” Charge nC 18.2 nC 9.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.37 0.7 VGS = 0 V, IS = 30 A (Note 2) 0.74 1.2 IF = 30 A, di/dt = 300 A/µs V 50 81 ns 84 136 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. EAS of 242 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 22 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 34 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS0300S Rev.C1 2 www.fairchildsemi.com FDMS0300S N-Channel PowerTrench® SyncFET™ Electrical Characteristics TJ = 25 °C unless otherwise noted 6 VGS = 10 V 150 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 180 VGS = 4.5 V VGS = 4 V 120 VGS = 3.5 V VGS = 3 V 90 60 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 30 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 5 VGS = 3 V 4 3 VGS = 3.5 V 2 VGS = 4 V 1 2.0 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 90 120 150 180 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 6 ID = 30 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics ID = 30 A 180 TJ = 125 oC 2 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 IS, REVERSE DRAIN CURRENT (A) 120 125 oC 90 TJ = 25 oC 60 TJ = -55 oC 30 0 1 2 3 200 100 8 10 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDMS0300S Rev.C1 6 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V TJ = 4 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 150 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 4 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 0 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS0300S N-Channel PowerTrench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 30 A Ciss 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 VDD = 15 V 4 Coss 1000 2 f = 1 MHz VGS = 0 V 0 20 40 60 80 100 1 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 200 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) Crss 100 0.1 0 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 150 VGS = 10 V 100 VGS = 4.5 V 50 o Limited by Package 1 0.01 0.1 1 10 100 0 25 1000 50 RθJC = 1.3 C/W 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 1 ms 10 10 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W DC TC = 25 oC 0.01 0.01 0.1 1 10 100 200 100 10 SINGLE PULSE RθJA = 125 oC/W 1 TC = 25 oC 0.5 -3 10 10 -2 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS0300S Rev.C1 VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS0300S N-Channel PowerTrench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS0300S Rev.C1 5 www.fairchildsemi.com FDMS0300S N-Channel PowerTrench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS0300S. 30 IDSS, REVERSE LEAKAGE CURRENT (A) -2 30 CURRENT (A) 25 di/dt = 300 A/µs 20 15 10 5 0 -5 0 50 100 150 200 250 TIME (ns) TJ = 125 oC TJ = 100 oC -3 10 -4 10 TJ = 25 oC -5 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDMS0300S SyncFET body diode reverse recovery characteristic FDMS0300S Rev.C1 10 Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS0300S N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com