FDMS0309AS

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode. „ Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A „ Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ SyncFETTM Schottky Body Diode Applications „ MSL1 Robust Package Design „ Synchronous Rectifier for DC/DC Converters „ 100% UIL tested „ Notebook Vcore/GPU Low Side Switch „ RoHS Compliant „ Networking Point of Load Low Side Switch „ Telecom Secondary Side Rectification Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 D 7 2 S D 8 1 S S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VDSt Drain to Source Transient Voltage ( tTransient < 100 ns) VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V 33 V ±20 V 49 96 (Note 1a) -Pulsed 21 A 100 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 66 50 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.5 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS0309AS Device FDMS0309AS ©2011 Fairchild Semiconductor Corporation FDMS0309AS Rev.C5 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS0309AS N-Channel PowerTrench® SyncFETTM January 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 25 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.2 1.6 -5 mV/°C VGS = 10 V, ID = 21 A 2.7 3.5 VGS = 4.5 V, ID = 19 A 3.4 4.3 VGS = 10 V, ID = 21 A, TJ = 125 °C 3.7 4.8 VDS = 5 V, ID = 21 A 120 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2255 3000 pF 815 1085 pF 85 125 pF 1.0 2.5 Ω ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, ID = 21 A, VGS = 10 V, RGEN = 6 Ω 11 19 4.5 10 ns 29 46 ns tf Fall Time 3.7 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 34 47 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 21 A 16 23 5.9 nC 4.6 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 VGS = 0 V, IS = 21 A (Note 2) 0.8 1.2 IF = 21 A, di/dt = 300 A/μs V 26 42 ns 27 44 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2011 Fairchild Semiconductor Corporation FDMS0309AS Rev.C5 2 www.fairchildsemi.com FDMS0309AS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted 100 5 ID, DRAIN CURRENT (A) 80 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V VGS = 4.5 V 60 VGS = 4 V VGS = 3.5 V 40 VGS = 3 V 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 VGS = 3.5 V 3 2 VGS = 4.5 V VGS = 6 V VGS = 10 V 0 2.0 0 20 40 60 80 100 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 10 ID = 21 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4 V 1 Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 21 A 8 6 TJ = 125 oC 4 TJ = 25 oC 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V VDS = 5 V TJ = 125 oC 60 TJ = 25 oC 40 TJ = -55 oC 20 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS = 0 V TJ = 125 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMS0309AS Rev.C5 3 1.2 www.fairchildsemi.com FDMS0309AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 21 A Ciss 8 VDD = 15 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 20 V 4 1000 Coss Crss 2 100 0 0 10 20 30 f = 1 MHz VGS = 0 V 40 0.1 40 Figure 7. Gate Charge Characteristics 30 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 40 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 80 VGS = 10 V 60 VGS = 4.5 V 40 Limited by Package 20 o RθJC = 2.5 C/W 1 0.001 0.01 0.1 1 10 0 25 100 P(PK), PEAK TRANSIENT POWER (W) 100 μs 10 1 ms 10 ms 0.1 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100200 VDS, DRAIN to SOURCE VOLTAGE (V) 125 150 2000 1000 100 10 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 1 0.5 -4 -3 -2 10 10 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS0309AS Rev.C5 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 THIS AREA IS LIMITED BY rDS(on) 75 o Figure 9. Unclamped Inductive Switching Capability 1 50 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 4 www.fairchildsemi.com FDMS0309AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS0309AS Rev.C5 5 www.fairchildsemi.com FDMS0309AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFETTM Schottky body diode Characteristics Fairchild’s SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS0309AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 25 CURRENT (A) 20 15 di/dt = 300 A/μs 10 5 0 -5 0 50 100 150 200 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 TJ = 25 oC 10 -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFETTM body diode reverse leakage versus drain-source voltage Figure 14. FDMS0309AS SyncFETTM body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS0309AS Rev.C5 10 6 www.fairchildsemi.com FDMS0309AS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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