FDMS037N08B

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS037N08B N-Channel PowerTrench® MOSFET 75 V, 100 A, 3.7 mΩ Features Description • RDS(on) = 3.01 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr = 80 nC • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification Applications • Fast Switching Speed • Synchronous Rectification for ATX / Server / Telecom PSU • 100% UIL Tested • Battery Protection circuit • RoHS Compliant • DC Motor Drives and Uninterruptible Power Supplies Bottom Top S D D D Pin 1 S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 MOSFET Maximum Ratings TA = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter - Continuous (TC = 25oC) Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy - Pulsed PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range (Note 1a) ±20 V 128 A 19.9 (Note 2) 400 A (Note 3) 180.6 mJ 104.2 W (TC = 25oC) (TA = 25oC) Unit V 100 - Continuous (TC = 25oC, Silicon Limited) - Continuous (TA = 25oC) FDMS037N08B 75 (Note 1a) 0.83 -55 to +150 W o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2012 Fairchild Semiconductor Corporation FDMS037N08B Rev. C2 FDMS037N08B 1.2 (Note 1a) 1 50 Unit oC/W www.fairchildsemi.com FDMS037N08B — N-Channel PowerTrench® MOSFET November 2013 Device Marking FDMS037N08B Device FDMS037N08B Package Power 56 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units Electrical Characteristics TJ= 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 75 - - V - 39 - mV/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V VDS = 60 V, VGS = 0 V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA 2.5 - 4.5 V - 3.01 3.7 mΩ - 108 - S o ID = 250 μA, Referenced to 25 C On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 50 A VDS = 10 V, ID = 50 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Releted Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Vplateau Gate Plateau Volatge Qsync Total Gate Charge Sync. VDS = 37.5 V, VGS = 0 V f = 1 MHz VDS = 37.5 V, VGS = 0 V VDS = 37.5 V, ID = 50 A VGS = 0 V to 10 V (Note 4) VDS = 0 V, ID = 50 A - 4550 5915 pF - 1060 1380 pF - 30.2 45 pF - 1702 - pF - 76.8 100 nC - 27.5 - nC - 17.4 - nC - 5.1 - V - 66.3 - nC Qoss Output Charge VDS = 37.5 V, VGS = 0 V - 74.6 - nC ESR Equivalent Series Resistance f = 1 MHz - 1.28 - Ω - 34.9 80 ns - 20.1 50 ns - 55.3 120 ns - 19.4 49 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 37.5 V, ID = 50 A VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 100 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 400 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 50 A - - 1.3 V trr Reverse Recovery Time - 66.8 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 50 A dIF/dt = 100 A/μs - 84 - nC Notes: 1.RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Repetitive rating: pulse-width limited by maximum junction temperature. 3. L = 0.3 mH, IAS = 34.7 A, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2012 Fairchild Semiconductor Corporation FDMS037N08B Rev. C2 2 www.fairchildsemi.com FDMS037N08B — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 400 100 10 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.1 ID, Drain Current[A] ID, Drain Current[A] 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1 VDS, Drain-Source Voltage[V] o 25 C o 150 C 10 1 2.5 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 3.5 4.0 4.5 5.0 5.5 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 3.5 VGS = 10V 3.0 VGS = 20V 2.5 100 o 150 C 10 *Note: TC = 25 C 0 50 100 150 200 250 300 ID, Drain Current [A] 350 o 25 C *Notes: 1. VGS = 0V o 2. 250μs Pulse Test 1 0.2 400 Figure 5. Capacitance Characteristics 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 10000 Ciss Capacitances [pF] 6.0 400 4.0 2.0 o -55 C Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 4.5 RDS(ON) [mΩ], Drain-Source On-Resistance *Notes: 1. VDS = 10V 2. 250μs Pulse Test 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 100 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDMS037N08B Rev. C2 VDS = 15V VDS = 37.5V VDS = 60V 8 6 4 2 Crss *Note: ID = 50A 0 75 3 0 20 40 60 Qg, Total Gate Charge [nC] 80 www.fairchildsemi.com FDMS037N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 1.0 *Notes: 1. VGS = 10V 2. ID = 50A 0.8 -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 140 120 100 ID, Drain Current [A] ID, Drain Current [A] 1.2 Figure 10. Maximum Drain Current vs. Case Temperature 1000 1ms 10ms 10 100ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: o 0.1 100 VGS= 10V 80 60 40 1. Ta = 25 C 20 o 0.01 0.01 2. TJ = 150 C 3. Single Pulse 0.1 1 10 VDS, Drain-Source Voltage [V] o RθJC= 1.2 C/W 0 25 100 Figure 11. Eoss vs. Drain to Source Voltage 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 12. Unclamped Inductive Switching Capability 3.0 100 IAS, AVALANCHE CURRENT (A) 2.4 EOSS, [μJ] 1.4 0.6 -80 160 Figure 9. Maximum Safe Operating Area 1.8 1.2 0.6 0 1.6 0 15 30 45 60 VDS, Drain to Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDMS037N08B Rev. C2 TJ = 150 oC 1 0.001 75 TJ = 25 oC 10 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 4 www.fairchildsemi.com FDMS037N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDMS037N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Normalized Thermal Thermal Response, ZθJA(t) Impedance, ZθJA (Normalized) 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 *Notes: 0.01 0.01 o Single pulse 0.005 0.01 t2 1. ZθJA(t) = 125 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 1 10 100 1000 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] ©2012 Fairchild Semiconductor Corporation FDMS037N08B Rev. C2 5 www.fairchildsemi.com FDMS037N08B — N-Channel PowerTrench® MOSFET Figure 14. Gate Charge Test Circuit & Waveform IG = const. Figure 15. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT VGS 10V 90% 10% td(on) tr t on td(off) tf t off Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2012 Fairchild Semiconductor Corporation FDMS037N08B Rev. C2 6 www.fairchildsemi.com FDMS037N08B — N-Channel PowerTrench® MOSFET Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2012 Fairchild Semiconductor Corporation FDMS037N08B Rev. C2 7 www.fairchildsemi.com VCC Driver VGS ( Driver) VGS (DUT) VDD VRG RG t 10V t DUT Qsync = VGS ©2012 Fairchild Semiconductor Corporation FDMS037N08B Rev. C2 8 1 ⋅ VR ( t ) dt RG  G www.fairchildsemi.com FDMS037N08B — N-Channel PowerTrench® MOSFET Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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