FDMS1D4N03S

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS1D4N03S N-Channel PowerTrench® SyncFETTM 30 V, 211 A, 1.09 mΩ Features General Description The FDMS1D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. „ Max rDS(on) = 1.09 mΩ at VGS = 10 V, ID = 38 A „ Max rDS(on) = 1.3 mΩ at VGS = 4.5 V, ID = 35 A „ High Performance Technology for Extremely Low rDS(on) „ SyncFETTM Schottky Body Diode „ 100% UIL Tested Applications „ RoHS Compliant „ Synchronous Rectifier for DC/DC Converters „ Notebook Vcore/ GPU Low Side Switch „ Networking Point of Load Low Side Switch „ Telecom Secondary Sde Rectification D G S S D D D 5 4 G D 6 3 D 7 2 S D 8 1 Pin 1 S Top D S S Bottom Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TC = 25 °C -Continuous TC = 100 °C -Continuous TA = 25 °C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings 30 Units V ±16 V (Note 5) 211 (Note 5) 134 (Note 1a) 38 (Note 4) 1140 (Note 3) 384 74 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.7 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS1D4N03S Device FDMS1D4N03S Package Power 56 Semiconductor Components Industries, LLC, 2016 December, 2016, Rev. 1.0 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMS1D4N03S/D 1 FDMS1D4N03S N-Channel PowerTrench® SyncFETTM www.onsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current VGS = ±16 V, VDS = 0 V ±100 nA 3 V 20 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C VGS = 10 V, ID = 38 A 0.8 1.09 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 35 A 1.0 1.3 VGS = 10 V, ID = 38 A, TJ = 125 °C 1.2 1.7 VDS = 5 V, ID = 38 A 281 gFS Forward Transconductance 1 1.6 -4 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 0.1 7320 10250 pF 1950 2730 pF 101 180 pF 0.5 1.5 Ω 21 33 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 15 V, ID = 38 A, VGS = 10 V, RGEN = 6 Ω 6 12 ns 51 82 ns 5 10 ns Total Gate Charge VGS = 0 V to 10 V 102 143 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 38 A 46 65 18 nC 9 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 38 A (Note 2) 0.8 1.3 IF = 38 A, di/dt = 246 A/μs V 44 70 ns 70 112 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b) 125 °C/W when mounted on a minimum pad of 2 oz copper. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 384 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS =16 A, VDD =30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 52 A. 4. Pulse Id please refer to Fig.11 SOA curve for detail. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design www.onsemi.com 2 FDMS1D4N03S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted. VGS = 10 V VGS = 4.5 V 150 VGS = 4 V VGS = 3.5 V 100 VGS = 3 V 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 200 VGS = 3 V 2 VGS = 3.5 V 1 VGS = 4 V 0 0 0.6 40 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 -50 100 125 150 4 TJ = 125 oC 2 TJ = 25 oC 0 2 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25 oC 100 TJ = -55 oC 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1 2 3 4 6 8 10 Figure 4. On-Resistance vs. Gate to Source Voltage 150 0 4 VGS, GATE TO SOURCE VOLTAGE (V) VDS = 5 V TJ = 125 200 6 0 Figure 3. Normalized On Resistance vs. Junction Temperature oC 160 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 38 A TJ, JUNCTION TEMPERATURE (oC) 200 120 8 1.4 0.7 -75 80 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage ID = 38 A VGS = 10 V 1.5 VGS = 10 V ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.6 VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 0.2 0.4 0.6 0.8 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.0 FDMS1D4N03S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted. 10000 ID = 38 A Ciss VDD = 15 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 6 4 VDD = 10 V VDD = 20 V 2 Coss 1000 100 Crss f = 1 MHz VGS = 0 V 0 0 20 40 60 10 0.1 80 Figure 7. Gate Charge Characteristics 30 ID, DRAIN CURRENT (A) 240 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 192 VGS = 10 V 144 VGS = 4.5 V 96 48 o RθJC = 1.7 C/W 1 0.001 0.01 0.1 1 10 100 0 25 1000 50 150 5 P(PK), PEAK TRANSIENT POWER (W) 10 10 μs 100 100 μs 10 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 2000 1000 0.1 100 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs. Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 ms 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJC = 1.7 oC/W TC = 25 oC 0.1 CURVE BENT TO MEASURED DATA 1 10 100 SINGLE PULSE RθJC = 1.7 oC/W TC = 25 oC 4 10 3 10 2 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1 FDMS1D4N03S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -5 10 NOTES: ZθJC(t) = r(t) x RθJC RθJC = 1.7 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE -4 10 -3 -2 10 10 Figure 13. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 5 -1 10 t, RECTANGULAR PULSE DURATION (sec) 1 FDMS1D4N03S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted. SyncFETTM Schottky body diode Characteristics Fairchild’s SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS1D4N03S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 40 35 CURRENT (A) 30 25 Di/Dt = 246 A/μs 20 15 10 5 0 -5 0 100 200 300 400 10 TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 500 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME (ns) Figure 14. FDMS1D4N03S SyncFETTM Body Diode Reverse Recovery Characteristic Figure 15. SyncFETTM Body Diode Reverse Leakage vs. Drain-Source Voltage www.onsemi.com 6 FDMS1D4N03S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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