N-Channel Dual CoolTM PowerTrench® SyncFETTM
25 V, 49 A, 1.25 mΩ
Features
Dual Cool
General Description
TM
Top Side Cooling PQFN package
SyncFET Schottky Body Diode
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
advanced
PowerTrench®
process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
RoHS Compliant
Applications
Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 32 A
Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A
High performance technology for extremely low rDS(on)
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Pin 1
S
S
S
G
D
D
D
D
Power 56
Top
D
5
4 G
D
6
3
D
7
2 S
D
8
1
S
S
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
(Note 4)
-Continuous (Package limited)
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
Ratings
25
Units
V
±20
V
49
235
(Note 1a)
-Pulsed
42
A
200
EAS
Single Pulse Avalanche Energy
(Note 3)
288
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 5)
1.5
V/ns
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
104
(Note 1a)
Operating and Storage Junction Temperature Range
3.3
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Top Source)
2.6
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.2
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
°C/W
Package Marking and Ordering Information
Device Marking
2504S
Device
FDMS2504SDC
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
Package
Dual CoolTM Power 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
July 2013
FDMS2504SDC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
25
V
ID = 10 mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
500
μA
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100
nA
3.0
V
21
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 32 A
1.0
1.25
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 28 A
1.4
1.75
VGS = 10 V, ID = 32 A, TJ = 125 °C
1.4
1.8
VDD = 5 V, ID = 32 A
221
gFS
Forward Transconductance
1.2
1.6
-5
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
5843
7770
pF
1615
2150
pF
317
475
pF
0.5
1.0
Ω
18
33
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 13 V, ID = 32 A,
VGS = 10 V, RGEN = 6 Ω
9
18
ns
44
70
ns
5
10
ns
Total Gate Charge
VGS = 0 V to 10 V
85
119
nC
VGS = 0 V to 4.5 V VDD = 13 V,
ID = 32 A
39
55
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
nC
16.5
nC
9.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
VGS = 0 V, IS = 2 A
(Note 2)
0.38
0.7
VGS = 0 V, IS = 32 A
(Note 2)
0.75
1.2
IF = 32 A, di/dt = 300 A/μs
2
V
39
63
ns
52
84
nC
www.fairchildsemi.com
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25°C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
2.6
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.2
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
27
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
34
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
61
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
13
°C/W
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 288 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 24 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 35 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. ISD ≤ 32 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25 °C.
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
3
www.fairchildsemi.com
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Thermal Characteristics
180
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
ID, DRAIN CURRENT (A)
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V
120
VGS = 3.5 V
VGS = 3 V
90
60
30
VGS = 2.5 V
0
0
1
2
3
4
VGS = 2.5 V
16
12
8
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
4
0
5
0
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
90
120
150
180
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
5
ID = 32 A
VGS = 10 V
1.4
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
180
ID = 32 A
3
TJ = 125 oC
2
1
TJ = 25 oC
2
IS, REVERSE DRAIN CURRENT (A)
90
TJ = 125 oC
60
TJ = 25 oC
30
TJ = -55 oC
2.5
3.0
6
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
VDS = 5 V
2.0
4
VGS, GATE TO SOURCE VOLTAGE (V)
120
0
1.5
4
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
-50
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
200
100
VGS = 0 V
10
TJ = 125 oC
TJ = 25 oC
1
TJ = -55 oC
0.1
0.01
0.0
3.5
0.2
0.4
0.6
0.8
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
4
1.0
www.fairchildsemi.com
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
8000
ID = 32 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 13 V
6
VDD = 10 V
VDD = 16 V
4
Coss
1000
2
f = 1 MHz
VGS = 0 V
0
0
15
30
45
60
75
1
Figure 7. Gate Charge Characteristics
30
Figure 8. Capacitance vs Drain
to Source Voltage
250
40
o
RθJC = 1.2 C/W
VGS = 10 V
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 25 oC
10
TJ =
100 oC
TJ = 125 oC
200
150
VGS = 4.5 V
100
50
Limited by package
1
0.01
0.1
1
10
100
0
25
1000
50
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10000
P(PK), PEAK TRANSIENT POWER (W)
500
100
100 us
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 81 oC/W
DC
TA = 25 oC
0.01
0.01
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
o
RθJA = 81 C/W
o
TA = 25 C
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
SINGLE PULSE
1000
1 ms
10
0.1
100
o
Figure 9. Unclamped Inductive Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
200
0.1
90
Figure 12. Single Pulse Maximum
Power Dissipation
5
www.fairchildsemi.com
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.0001
-4
10
t2
SINGLE PULSE
0.001
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 81 C/W
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
6
www.fairchildsemi.com
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS2504SDC.
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in
the device.
-2
IDSS, REVERSE LEAKAGE CURRENT (A)
35
30
CURRENT (A)
25
20
di/dt = 300 A/μs
15
10
5
0
-5
0
5
10
15
20
25
10
TJ = 125 oC
-3
10
TJ = 100 oC
-4
10
-5
TJ = 25 oC
10
-6
10
0
5
10
15
20
25
TIME (ns)
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS2504SDC SyncFET body
diode reverse recovery characteristic
Figure 15. SyncFET body diode reverse
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
leakage versus drain-source voltage
7
www.fairchildsemi.com
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics (continued)
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
9
www.fairchildsemi.com
FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
2Cool™
FPS™
®
AccuPower™
F-PFS™
®*
®
®
®
AX-CAP *
FRFET
PowerTrench
SM
Global Power Resource
PowerXS™
BitSiC™
TinyBoost™
Green Bridge™
Programmable Active Droop™
Build it Now™
TinyBuck™
Green FPS™
QFET®
CorePLUS™
TinyCalc™
Green FPS™ e-Series™
QS™
CorePOWER™
TinyLogic®
Gmax™
Quiet Series™
CROSSVOLT™
TINYOPTO™
GTO™
RapidConfigure™
CTL™
TinyPower™
IntelliMAX™
Current Transfer Logic™
™
TinyPWM™
®
ISOPLANAR™
DEUXPEED
TinyWire™
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
Dual Cool™
TranSiC®
and Better™
EcoSPARK®
SignalWise™
TriFault Detect™
MegaBuck™
SmartMax™
EfficentMax™
TRUECURRENT®*
MICROCOUPLER™
SMART START™
ESBC™
μSerDes™
MicroFET™
Solutions for Your Success™
®
MicroPak™
SPM®
®
MicroPak2™
STEALTH™
Fairchild
UHC®
MillerDrive™
SuperFET®
Fairchild Semiconductor®
Ultra FRFET™
MotionMax™
SuperSOT™-3
FACT Quiet Series™
UniFET™
mWSaver™
SuperSOT™-6
FACT®
VCX™
OptoHiT™
SuperSOT™-8
FAST®
®
®
VisualMax™
OPTOLOGIC
SupreMOS
FastvCore™
®
VoltagePlus™
OPTOPLANAR
SyncFET™
FETBench™
XS™