FDMS2510SDC

N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. „ RoHS Compliant Applications „ Max rDS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A „ Max rDS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on) „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side Pin 1 S S S G D Top D D D D 5 4 G D 6 3 D 7 2 S D 8 1 S S Bottom Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID (Note 4) -Continuous (Package limited) TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C Ratings 25 Units V ±20 V 49 117 (Note 1a) -Pulsed 28 A 200 EAS Single Pulse Avalanche Energy (Note 3) 84 mJ dv/dt Peak Diode Recovery dv/dt (Note 5) 2.5 V/ns (Note 1a) 3.3 PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 60 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Top Source) 4.4 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.1 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 °C/W Package Marking and Ordering Information Device Marking 2510S Device FDMS2510SDC ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 Package Dual CoolTM Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM July 2013 FDMS2510SDC Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 19 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.7 -5 mV/°C VGS = 10 V, ID = 23 A 2.4 2.9 VGS = 4.5 V, ID = 18 A 3.4 4.2 VGS = 10 V, ID = 23 A, TJ = 125 °C 3.5 4.3 VDS = 5 V, ID = 23 A 159 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 2090 2780 pF 577 770 pF 128 195 pF 1.1 2.4 Ω 10 20 ns 4 10 ns 27 43 ns 3 10 ns nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V 32 45 Qg Total Gate Charge 15 21 Qgs Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 13 V, ID = 23 A Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 23 A, VGS = 10 V, RGEN = 6 Ω nC 6.3 nC 4.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 VGS = 0 V, IS = 2 A (Note 2) 0.48 0.8 VGS = 0 V, IS = 23 A (Note 2) 0.79 1.2 23 36 ns 17 31 nC IF = 23 A, di/dt = 300 A/ μs 2 V www.fairchildsemi.com FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted RθJC Thermal Resistance, Junction to Case (Top Source) 4.4 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.1 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 °C/W NOTES: 1. RθJA is determined with the device mounted on specified pad 2 oz copper pad on board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 81 °C/W when mounted on a minimum pad of 2 oz copper a. 38 °C/W when mounted on a 1 in2 pad of 2 oz copper c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. ISD ≤ 23 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC. ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 3 www.fairchildsemi.com FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Thermal Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 120 VGS = 3.5 V VGS = 3 V VGS = 4.5 V 90 VGS = 10 V 60 VGS = 2.5 V 30 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 VGS = 3 V 4 1 2 3 4 VGS = 3.5 V VGS = 4.5 V 2 0 0 VGS = 2.5 V 8 VGS = 10 V 0 5 0 30 60 Figure 1. On Region Characteristics 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 10 I = 23 A 1.4 D VGS = 10 V rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 90 TJ = 125 oC 60 oC 30 TJ = -55 oC 2.0 2.5 3.0 3.5 TJ = 125 oC 4 2 TJ = 25 oC 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 120 1.5 6 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 8 2 150 TJ = 25 ID = 23 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 90 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 4 1.2 www.fairchildsemi.com FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 23A 8 VDD = 13 V 6 VDD = 10 V Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 16 V 4 1000 Coss 2 100 0 0 5 10 15 20 25 30 f = 1 MHz VGS = 0 V Crss 50 0.1 35 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 50 150 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 2.1 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 100 VGS = 4.5 V 50 Limited by package 1 0.01 0.1 1 10 0 25 1000 50 tAV, TIME IN AVALANCHE (ms) 150 10000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 10 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 81 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) o RθJA = 81 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 SINGLE PULSE 1000 100 us 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 81 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 6 www.fairchildsemi.com FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS2510SDC. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 25 CURRENT (A) 20 15 di/dt = 300 A/μs 10 5 0 -5 0 50 100 150 200 10 TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 TIME (ns) VDS, REVERSE VOLTAGE (V) Figure 14. FDMS2510SDC SyncFET body diode reverse recovery characteristic Figure 15. SyncFET body diode reverse ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 leakage versus drain-source voltage 7 www.fairchildsemi.com FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FDMS2510SDC Rev.C3 9 www.fairchildsemi.com FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ 2Cool™ FPS™ ® AccuPower™ F-PFS™ ®* PowerTrench® AX-CAP®* FRFET® BitSiC™ Global Power ResourceSM PowerXS™ TinyBoost™ Build it Now™ Green Bridge™ Programmable Active Droop™ TinyBuck™ CorePLUS™ QFET® Green FPS™ TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ RapidConfigure™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ DEUXPEED® ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™