FDMS2672

FDMS2672 N-Channel UltraFET Trench MOSFET 200V, 20A, 77mΩ Features tm General Description „ Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. „ Max rDS(on) = 88mΩ at VGS = 6V, ID = 3.5A „ Low Miller Charge „ RoHS Compliant Application „ DC - DC Conversion S Pin 1 D S S D D G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C ID TJ, TSTG Units V ±20 V 20 (Note 1a) -Pulsed PD Ratings 200 3.7 A 20 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 78 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.6 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS2672 Device FDMS2672 ©2007 Fairchild Semiconductor Corporation FDMS2672 Rev.C Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS2672 N-Channel UltraFET Trench MOSFET February 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 200 ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 160V IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V V 210 mV/°C 1 µA ±100 nA 4 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -10 VGS = 10V, ID = 3.7A 64 rDS(on) Drain to Source On Resistance VGS = 6V, ID = 3.5A 69 88 VGS = 10V, ID = 3.7A TJ = 125°C 129 156 VDS = 10V, ID = 3.7A 14 gFS Forward Transconductance 2 3.1 mV/°C 77 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 100V, VGS = 0V, f = 1MHz f = 1MHz 1740 2315 pF 95 125 pF 30 45 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 100V, ID = 3.7A VGS = 10V, RGEN = 6Ω VGS = 0V to 10V VDD = 100V ID = 3.7A 22 34 ns 11 22 ns 36 57 ns 10 20 ns 30 42 nC 7 nC 8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 3.7A (Note 2) IF = 3.7A, di/dt = 100A/µs 0.8 1.2 V 70 105 ns 238 357 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMS2672 Rev.C 2 www.fairchildsemi.com FDMS2672 N-Channel UltraFET Trench MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 40 3.0 VGS = 8V 30 VGS = 10V 20 VGS = 6V VGS = 5V 10 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 2.5 VGS = 5V 1.0 VGS = 10V 0.5 4 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 150oC TJ = 25oC 10 TJ = -55oC 5 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7 Figure 5. Transfer Characteristics FDMS2672 Rev.C 30 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 150 TA = 150oC 125 100 TA = 25oC 75 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 25 15 ID = 4.5A 175 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 20 10 20 ID, DRAIN CURRENT(A) 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 3.7A VGS = 10V 2.2 VGS = 8V 1.5 Figure 1. On Region Characteristics 2.4 VGS = 6V 2.0 40 10 VGS = 0V TJ = 150oC 1 TJ = 25oC 0.1 0.01 1E-3 0.0 TJ = -55oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS2672 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 4000 CAPACITANCE (pF) 8 VDD = 100V 6 VDD = 150V 4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 1000 Coss f = 1MHz VGS = 0V 10 0.1 40 100 25 4 3 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 5 TJ = 25oC 2 TJ = 125oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 100ms SINGLE PULSE TJ = MAX RATED 1s DC TA = 25OC 1E-3 0.1 1 10 100 5 o RθJC = 1.6 C/W 25 50 75 100 125 150 TC, CASE TEMPERATURE ( C) 10ms 0.1 VGS = 6V 10 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100us 1 VGS = 10V 15 o 60 10 20 0 10 Figure 9. Unclamped Inductive Switching Capability 700 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS2672 Rev.C Crss 100 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) Ciss VDD = 50V 2000 1000 TA = 25oC FOR TEMPERATURES VGS = 10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 – T A ----------------------125 I = I25 10 1 SINGLE PULSE 0.3 -3 10 -2 10 -1 0 1 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS2672 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 1E-3 5E-4 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS2672 Rev.C 5 www.fairchildsemi.com FDMS2672 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS2672 N-Channel UltraFET Trench MOSFET www.fairchildsemi.com 6 FDMS2672 Rev.C The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDMS2672 Rev. C 7 www.fairchildsemi.com FDMS2672 N-Channel UItraFET Trench MOSFET TRADEMARKS