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FDMS2734
N-Channel UltraFET Trench® MOSFET
250V, 14A, 122m:
Features
General Description
Max rDS(on) = 122m: at VGS = 10V, ID = 2.8A
Low Miller Charge
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Optimized efficiency at high frequencies
Application
Max rDS(on) = 130m: at VGS = 6V, ID = 1.7A
RoHS Compliant
DC - DC Conversion
S
Pin 1
D
S
D
D
S
G
D
D
5
4 G
D
6
3 S
D
7
2 S
D
8
1 S
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
ID
TJ, TSTG
Units
V
±20
V
14
(Note 1a)
-Pulsed
PD
Ratings
250
2.8
A
30
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
78
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
1.6
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS2734
Device
FDMS2734
©2011 Fairchild Semiconductor Corporation
FDMS2734 Rev.C1
Package
Power 56
1
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
www.fairchildsemi.com
FDMS2734 N-Channel UltraFET Trench® MOSFET
March 2011
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250PA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
250
ID = 250PA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 200V,
IGSS
Gate to Source Leakage Current
VGS = ±20V, VGS = 0V
V
250
mV/°C
1
PA
±100
nA
4
V
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250PA, referenced to 25°C
-11
VGS = 10V, ID = 2.8A
105
122
rDS(on)
Drain to Source On Resistance
VGS = 6V,
ID = 1.7A
110
130
VGS = 10V, ID = 2.8A TJ = 125°C
217
258
gFS
Forward Transconductance
VDS = 10V, ID = 2.8A
2
3
mV/°C
11
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 100V, VGS = 0V,
f = 1MHz
1775
2365
80
110
pF
pF
25
40
pF
:
f = 1MHz
0.9
22
36
ns
VDD = 125V, ID = 2.8A
VGS = 10V, RGEN = 6:
10
20
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VGS = 0V to 10V VDD = 125V
ID = 2.8A
36
58
ns
12
22
ns
30
42
nC
7
nC
9
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.8A
(Note 2)
IF = 2.8A, di/dt = 100A/Ps
0.75
1.20
V
79
119
ns
214
321
nC
Notes:
1: RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined
by the user's board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
FDMS2734 Rev.C1
2
www.fairchildsemi.com
FDMS2734 N-Channel UltraFET Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
2.2
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)
25
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
VGS = 6V
VGS = 10V
20
VGS = 5V
15
10
VGS = 4.5V
5
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.8
VGS = 5V
VGS = 6V
1.4
1.2
VGS = 10V
1.0
0.8
0
5
5
10
15
20
ID, DRAIN CURRENT(A)
25
30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
400
2.4
2.2
ID = 2.8A
VGS = 10V
2.0
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 4.5V
1.6
Figure 1. On Region Characteristics
ID = 7A
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
320
1.8
1.6
TJ = 150oC
240
1.4
1.2
1.0
160
0.8
0.6
0.4
-75
-50
TJ = 25oC
80
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
4
Figure 3. Normalized On Resistance
vs Junction Temperature
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
12
TJ = 150oC
TJ = -55oC
8
TJ = 25oC
4
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
20
10
10
VGS = 0V
1
TJ = 150oC
TJ = -55oC
0.1
TJ = 25oC
0.01
1E-3
0.0
6
Figure 5. Transfer Characteristics
FDMS2734 Rev.C1
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
16
ID, DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
2.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMS2734 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
8
1000
VDD =75V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 125V
6
VDD = 175V
4
2
Ciss
Coss
100
10
0.1
0
0
8
16
24
Qg, GATE CHARGE(nC)
32
Figure 7. Gate Charge Characteristics
4
15
3
12
2
TJ
= 125oC
TJ
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 8. Capacitance vs Drain
to Source Voltage
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
Crss
f = 1MHz
VGS = 0V
= 25oC
VGS = 10V
9
VGS = 6V
6
3
o
RTJC = 1.6 C/W
1
0.01
0.1
tAV, TIME IN AVALANCHE(ms)
0
25
0.5
Figure 9. Unclamped Inductive
Switching Capability
50
75
100
125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
P(PK), PEAK TRANSIENT POWER (W)
40
ID, DRAIN CURRENT (A)
10
1 ms
1
0.1
0.01
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
RTJA = 125 oC/W
DC
TA = 25 oC
0.001
0.1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDMS2734 Rev.C1
3000
1000
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
VGS = 10V
CURRENT AS FOLLOWS:
100
150 – T
A
-----------------------125
I = I25
TA = 25oC
10
1
SINGLE PULSE
0.1
-3
10
-2
10
-1
0
1
10
10
10
t, PULSE WIDTH (s)
2
10
3
10
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS2734 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZTJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
1E-3
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
1E-4
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDMS2734 Rev.C1
5
www.fairchildsemi.com
FDMS2734 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMS2734 N-Channel UltraFET Trench® MOSFET
www.fairchildsemi.com
6
FDMS2734 Rev.C1
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Semiconductor. The datasheet is for reference information only.
Rev. I51
FDMS2734 Rev.C1
7
www.fairchildsemi.com
FDMS2734 N-Channel UItraFET Trench® MOSFET
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